Mikael Syväjärvi
Mikael Syväjärvi
ICM Research Institute
Verified email at - Homepage
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Towards a quantum resistance standard based on epitaxial graphene
A Tzalenchuk, S Lara-Avila, A Kalaboukhov, S Paolillo, M Syväjärvi, ...
Nature nanotechnology 5 (3), 186-189, 2010
Isolated spin qubits in SiC with a high-fidelity infrared spin-to-photon interface
DJ Christle, PV Klimov, F Charles, K Szász, V Ivády, V Jokubavicius, ...
Physical Review X 7 (2), 021046, 2017
Growth of large area monolayer graphene on 3C-SiC and a comparison with other SiC polytypes
GR Yazdi, R Vasiliauskas, T Iakimov, A Zakharov, M Syväjärvi, ...
Carbon 57, 477-484, 2013
Growth of 6H and 4H–SiC by sublimation epitaxy
M Syväjärvi, R Yakimova, M Tuominen, A Kakanakova-Georgieva, ...
Journal of Crystal Growth 197 (1-2), 155-162, 1999
Dislocation evolution in 4H-SiC epitaxial layers
H Jacobson, J Birch, R Yakimova, M Syväjärvi, JP Bergman, A Ellison, ...
Journal of applied physics 91 (10), 6354-6360, 2002
Graphene materials: fundamentals and emerging applications
A Tiwari, M Syväjärvi
John Wiley & Sons, 2015
Analysis of the formation conditions for large area epitaxial graphene on SiC substrates
R Yakimova, C Virojanadara, D Gogova, M Syväjärvi, D Siche, K Larsson, ...
Materials Science Forum 645, 565-568, 2010
Microstructural characterization of very thick freestanding 3C-SiC wafers
E Polychroniadis, M Syväjärvi, R Yakimova, J Stoemenos
Journal of crystal growth 263 (1-4), 68-75, 2004
Polytype stability in seeded sublimation growth of 4H–SiC boules
R Yakimova, M Syväjärvi, T Iakimov, H Jacobsson, R Råback, A Vehanen, ...
Journal of Crystal Growth 217 (3), 255-262, 2000
Substrate orientation: A way towards higher quality monolayer graphene growth on 6H-SiC (0 0 0 1)
C Virojanadara, R Yakimova, JR Osiecki, M Syväjärvi, RIG Uhrberg, ...
Surface Science 603 (15), L87-L90, 2009
Step-bunching in SiC epitaxy: anisotropy and influence of growth temperature
M Syväjärvi, R Yakimova, E Janzén
Journal of Crystal Growth 236 (1-3), 297-304, 2002
Liquid phase epitaxial growth of SiC
M Syväjärvi, R Yakimova, HH Radamson, NT Son, Q Wahab, IG Ivanov, ...
Journal of Crystal Growth 197 (1-2), 147-154, 1999
Advances in wide bandgap SiC for optoelectronics
H Ou, Y Ou, A Argyraki, S Schimmel, M Kaiser, P Wellmann, ...
The European Physical Journal B 87, 1-16, 2014
Fluorescent SiC and its application to white light-emitting diodes
S Kamiyama, M Iwaya, T Takeuchi, I Akasaki, M Syväjärvi, R Yakimova
Journal of Semiconductors 32 (1), 013004, 2011
The influence of substrate morphology on thickness uniformity and unintentional doping of epitaxial graphene on SiC
J Eriksson, R Pearce, T Iakimov, C Virojanadara, D Gogova, M Andersson, ...
Applied Physics Letters 100 (24), 241607, 2012
Sublimation growth of AlN crystals: growth mode and structure evolution
R Yakimova, A Kakanakova-Georgieva, GR Yazdi, GK Gueorguiev, ...
Journal of crystal growth 281 (1), 81-86, 2005
Donor-acceptor-pair emission characterization in NB doped fluorescent SiC
Y Ou, V Jokubavicius, S Kamiyama, C Liu, RW Berg, M Linnarsson, ...
Optical Materials Express 1 (8), 1439-1446, 2011
Preferential etching of SiC crystals
R Yakimova, AL Hylén, M Tuominen, M Syväjärvi, E Janzen
Diamond and Related Materials 6 (10), 1456-1458, 1997
Cubic silicon carbide as a potential photovoltaic material
M Syväjärvi, Q Ma, V Jokubavicius, A Galeckas, J Sun, X Liu, M Jansson, ...
Solar Energy Materials and Solar Cells 145, 104-108, 2016
Structural improvement in sublimation epitaxy of 4H–SiC
M Syväjärvi, R Yakimova, H Jacobsson, E Janzén
Journal of Applied Physics 88 (3), 1407-1411, 2000
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