| Towards a quantum resistance standard based on epitaxial graphene A Tzalenchuk, S Lara-Avila, A Kalaboukhov, S Paolillo, M Syväjärvi, ... Nature nanotechnology 5 (3), 186-189, 2010 | 585 | 2010 |
| Isolated spin qubits in SiC with a high-fidelity infrared spin-to-photon interface DJ Christle, PV Klimov, CF de las Casas, K Szász, V Ivády, ... Physical Review X 7 (2), 021046, 2017 | 240 | 2017 |
| Growth of large area monolayer graphene on 3C-SiC and a comparison with other SiC polytypes GR Yazdi, R Vasiliauskas, T Iakimov, A Zakharov, M Syväjärvi, ... Carbon 57, 477-484, 2013 | 141 | 2013 |
| Growth of 6H and 4H–SiC by sublimation epitaxy M Syväjärvi, R Yakimova, M Tuominen, A Kakanakova-Georgieva, ... Journal of Crystal Growth 197 (1-2), 155-162, 1999 | 119 | 1999 |
| Graphene materials: fundamentals and emerging applications A Tiwari, M Syväjärvi John Wiley & Sons, 2015 | 112 | 2015 |
| Dislocation evolution in 4H-SiC epitaxial layers H Jacobson, J Birch, R Yakimova, M Syväjärvi, JP Bergman, A Ellison, ... Journal of applied physics 91 (10), 6354-6360, 2002 | 106 | 2002 |
| Analysis of the formation conditions for large area epitaxial graphene on SiC substrates R Yakimova, C Virojanadara, D Gogova, M Syväjärvi, D Siche, K Larsson, ... Materials Science Forum 645, 565-568, 2010 | 98 | 2010 |
| Polytype stability in seeded sublimation growth of 4H–SiC boules R Yakimova, M Syväjärvi, T Iakimov, H Jacobsson, R Råback, A Vehanen, ... Journal of Crystal Growth 217 (3), 255-262, 2000 | 89 | 2000 |
| Microstructural characterization of very thick freestanding 3C-SiC wafers E Polychroniadis, M Syväjärvi, R Yakimova, J Stoemenos Journal of crystal growth 263 (1-4), 68-75, 2004 | 88 | 2004 |
| Step-bunching in SiC epitaxy: anisotropy and influence of growth temperature M Syväjärvi, R Yakimova, E Janzén Journal of Crystal Growth 236 (1-3), 297-304, 2002 | 88 | 2002 |
| Emergence of microfluidics for next generation biomedical devices S Preetam, BK Nahak, S Patra, DC Toncu, S Park, M Syväjärvi, G Orive, ... Biosensors and Bioelectronics: X 10, 100106, 2022 | 84 | 2022 |
| Advances in wide bandgap SiC for optoelectronics H Ou, Y Ou, A Argyraki, S Schimmel, M Kaiser, P Wellmann, ... The European Physical Journal B 87, 1-16, 2014 | 84 | 2014 |
| Liquid phase epitaxial growth of SiC M Syväjärvi, R Yakimova, HH Radamson, NT Son, Q Wahab, IG Ivanov, ... Journal of Crystal Growth 197 (1-2), 147-154, 1999 | 83 | 1999 |
| Substrate orientation: A way towards higher quality monolayer graphene growth on 6H-SiC (0 0 0 1) C Virojanadara, R Yakimova, JR Osiecki, M Syväjärvi, RIG Uhrberg, ... Surface Science 603 (15), L87-L90, 2009 | 82 | 2009 |
| Advancements in net-zero pertinency of lignocellulosic biomass for climate neutral energy production BK Nahak, S Preetam, D Sharma, SK Shukla, M Syväjärvi, DC Toncu, ... Renewable and Sustainable Energy Reviews 161, 112393, 2022 | 71 | 2022 |
| Fluorescent SiC and its application to white light-emitting diodes S Kamiyama, M Iwaya, T Takeuchi, I Akasaki, M Syväjärvi, R Yakimova Journal of Semiconductors 32 (1), 013004, 2011 | 69 | 2011 |
| The progress and roadmap of metal–organic frameworks for high-performance supercapacitors PE Lokhande, S Kulkarni, S Chakrabarti, HM Pathan, M Sindhu, D Kumar, ... Coordination Chemistry Reviews 473, 214771, 2022 | 62 | 2022 |
| The influence of substrate morphology on thickness uniformity and unintentional doping of epitaxial graphene on SiC J Eriksson, R Pearce, T Iakimov, C Virojanadara, D Gogova, M Andersson, ... Applied Physics Letters 100 (24), 2012 | 62 | 2012 |
| Cubic silicon carbide as a potential photovoltaic material M Syväjärvi, Q Ma, V Jokubavicius, A Galeckas, J Sun, X Liu, M Jansson, ... Solar Energy Materials and Solar Cells 145, 104-108, 2016 | 60 | 2016 |
| Sublimation growth of AlN crystals: Growth mode and structure evolution R Yakimova, A Kakanakova-Georgieva, GR Yazdi, GK Gueorguiev, ... Journal of crystal growth 281 (1), 81-86, 2005 | 59 | 2005 |
