| A graphene-based hot electron transistor S Vaziri, G Lupina, C Henkel, AD Smith, M Östling, J Dabrowski, ... Nano letters 13 (4), 1435-1439, 2013 | 276 | 2013 |
| Atomic layer deposition of ZrO2/La2O3 high-k dielectrics on germanium reaching 0.5 nm equivalent oxide thickness S Abermann, O Bethge, C Henkel, E Bertagnolli Applied Physics Letters 94 (26), 2009 | 41 | 2009 |
| Atomic layer-deposited platinum in high-k/metal gate stacks C Henkel, S Abermann, O Bethge, E Bertagnolli Semiconductor science and technology 24 (12), 125013, 2009 | 38 | 2009 |
| Thulium silicate interfacial layer for scalable high-k/metal gate stacks ED Litta, PE Hellström, C Henkel, M Östling IEEE transactions on electron devices 60 (10), 3271-3276, 2013 | 32 | 2013 |
| A manufacturable process integration approach for graphene devices S Vaziri, G Lupina, A Paussa, AD Smith, C Henkel, G Lippert, J Dabrowski, ... Solid-State Electronics 84, 185-190, 2013 | 32 | 2013 |
| Stability of La2O3 and GeO2 passivated Ge surfaces during ALD of ZrO2 high-k dielectric O Bethge, C Henkel, S Abermann, G Pozzovivo, M Stoeger-Pollach, ... Applied surface science 258 (8), 3444-3449, 2012 | 32 | 2012 |
| Scalable approach for vertical device integration of epitaxial nanowires A Lugstein, M Steinmair, C Henkel, E Bertagnolli Nano letters 9 (5), 1830-1834, 2009 | 32 | 2009 |
| Current collapse reduction in InAlN/GaN MOS HEMTs by in situ surface pre-treatment and atomic layer deposition of ZrO2 high-k gate dielectrics S Abermann, G Pozzovivo, J Kuzmik, C Ostermaier, C Henkel, O Bethge, ... Electronics letters 45 (11), 570-572, 2009 | 27 | 2009 |
| Be smart against cancer! A school-based program covering cancer-related risk behavior F Stölzel, N Seidel, S Uhmann, M Baumann, H Berth, J Hoyer, G Ehninger BMC Public Health 14, 1-9, 2014 | 25 | 2014 |
| Stabilization of a very high-k crystalline ZrO2 phase by post deposition annealing of atomic layer deposited ZrO2/La2O3 dielectrics on germanium S Abermann, C Henkel, O Bethge, G Pozzovivo, P Klang, E Bertagnolli Applied Surface Science 256 (16), 5031-5034, 2010 | 25 | 2010 |
| High-deposition-rate atomic layer deposition of thulium oxide from TmCp3 and H2O ED Litta, PE Hellström, C Henkel, S Valerio, A Hallén, M Östling Journal of the Electrochemical Society 160 (11), D538, 2013 | 24 | 2013 |
| Process temperature dependent high frequency capacitance-voltage response of ZrO2/GeO2/germanium capacitors O Bethge, S Abermann, C Henkel, CJ Straif, H Hutter, J Smoliner, ... Applied Physics Letters 96 (5), 2010 | 24 | 2010 |
| HfO2/Al2O3 bilayered high-k dielectric for passivation and gate insulator in 4H-SiC devices M Usman, C Henkel, A Hallén ECS Journal of Solid State Science and Technology 2 (8), N3087, 2013 | 23 | 2013 |
| Pt-assisted oxidation of (100)-Ge/high-k interfaces and improvement of their electrical quality C Henkel, O Bethge, S Abermann, S Puchner, H Hutter, E Bertagnolli Applied Physics Letters 97 (15), 2010 | 23 | 2010 |
| Effective reduction of trap density at the Y2O3/Ge interface by rigorous high-temperature oxygen annealing O Bethge, C Zimmermann, B Lutzer, S Simsek, J Smoliner, ... Journal of Applied Physics 116 (21), 2014 | 22 | 2014 |
| Tuning the electrical performance of Ge nanowire MOSFETs by focused ion beam implantation T Burchhart, C Zeiner, A Lugstein, C Henkel, E Bertagnolli Nanotechnology 22 (3), 035201, 2010 | 21 | 2010 |
| Ge p-MOSFETs With Scaled ALD Gate Dielectrics C Henkel, S Abermann, O Bethge, G Pozzovivo, P Klang, M Reiche, ... IEEE transactions on electron devices 57 (12), 3295-3302, 2010 | 21 | 2010 |
| Ge p-MOSFETs With Scaled ALD Gate Dielectrics C Henkel, S Abermann, O Bethge, G Pozzovivo, P Klang, M Reiche, ... IEEE transactions on electron devices 57 (12), 3295-3302, 2010 | 21 | 2010 |
| Schottky barrier SOI-MOSFETs with high-k La2O3/ZrO2 gate dielectrics C Henkel, S Abermann, O Bethge, G Pozzovivo, P Klang, ... Microelectronic engineering 88 (3), 262-267, 2011 | 19 | 2011 |
| Passivation of SiC device surfaces by aluminum oxide A Hallén, M Usman, S Suvanam, C Henkel, D Martin, MK Linnarsson IOP Conference Series: Materials Science and Engineering 56 (1), 012007, 2014 | 18 | 2014 |
Stephan AbermannAIT Austrian Institute of TechnologyVerified email at ait.ac.at
