| On the go with SONOS MH White, DA Adams, J Bu IEEE Circuits and Devices Magazine 16 (4), 22-31, 2000 | 558 | 2000 |
| Characterization of surface channel CCD image arrays at low light levels MH White, DR Lampe, FC Blaha, IA Mack IEEE Journal of Solid-State Circuits 9 (1), 1-12, 1974 | 498 | 1974 |
| Modeling of transconductance degradation and extraction of threshold voltage in thin oxide MOSFET's HS Wong, MH White, TJ Krutsick, RV Booth Solid-State Electronics 30 (9), 953-968, 1987 | 424 | 1987 |
| Charge retention of scaled SONOS nonvolatile memory devices at elevated temperatures MH White Solid-State Electronics 44 (6), 949-958, 2000 | 250 | 2000 |
| Characterization of thin-oxide MNOS memory transistors MH White, JR Cricchi IEEE Transactions on Electron Devices 19 (12), 1280-1288, 1972 | 237 | 1972 |
| Design considerations in scaled SONOS nonvolatile memory devices J Bu, MH White Solid-State Electronics 45 (1), 113-120, 2001 | 235 | 2001 |
| Theory and application of charge pumping for the characterization of Si-SiO/sub 2/interface and near-interface oxide traps RE Paulsen, MH White IEEE Transactions on Electron Devices 41 (7), 1213-1216, 1994 | 230 | 1994 |
| A low voltage SONOS nonvolatile semiconductor memory technology MH White, Y Yang, A Purwar, ML French IEEE Transactions on Components, Packaging, and Manufacturing Technology …, 1997 | 213 | 1997 |
| 1.1 kv 4h-sic power umosfets AK Agarwal, JB Casady, LB Rowland, WF Valek, MH White, CD Brandt IEEE Electron Device Letters 18 (12), 586-588, 1997 | 179 | 1997 |
| An analytical retention model for SONOS nonvolatile memory devices in the excess electron state Y Wang, MH White Solid-State Electronics 49 (1), 97-107, 2005 | 178 | 2005 |
| Charge transport and storage of low programming voltage SONOS/MONOS memory devices FR Libsch, MH White Solid-state electronics 33 (1), 105-126, 1990 | 162 | 1990 |
| Non-volatile random access memory cell constructed of silicon carbide AK Agarwal, RR Siergiej, CD Brandt, MH White US Patent 5,510,630, 1996 | 152 | 1996 |
| Observation of near-interface oxide traps with the charge-pumping technique RE Paulsen, RR Siergiej, ML French, MH White IEEE Electron Device Letters 13 (12), 627-629, 1992 | 149 | 1992 |
| A CMOS-integrated'ISFET-operational amplifier'chemical sensor employing differential sensing HS Wong, MH White IEEE Transactions on Electron Devices 36 (3), 479-487, 1989 | 142 | 1989 |
| Electrical characterization of ONO triple dielectric in SONOS nonvolatile memory devices J Bu, MH White Solid-State Electronics 45 (1), 47-51, 2001 | 112 | 2001 |
| Time delay and integration detectors using charge transfer devices DH McCann, MH White, AP Turly, RA Frosch US Patent 4,280,141, 1981 | 108 | 1981 |
| Characterization of SONOS oxynitride nonvolatile semiconductor memory devices SJ Wrazien, Y Zhao, JD Krayer, MH White Solid-State Electronics 47 (5), 885-891, 2003 | 97 | 2003 |
| Retention reliability enhanced SONOS NVSM with scaled programming voltage J Bu, MH White Proceedings, IEEE Aerospace Conference 5, 5-5, 2002 | 97 | 2002 |
| Microminiature ganged threshold accelerometers compatible with integrated circuit technology WD Frobenius, SA Zeitman, MH White, DD O'Sullivan, RG Hamel IEEE Transactions on electron devices 19 (1), 37-40, 1972 | 89 | 1972 |
| Observation and characterization of near-interface oxide traps with CV techniques NL Cohen, RE Paulsen, MH White IEEE Transactions on Electron Devices 42 (11), 2004-2009, 1995 | 81 | 1995 |
