| Germanium-tin (GeSn) P-channel fin field-effect transistor fabricated on a novel GeSn-on-insulator substrate D Lei, KH Lee, YC Huang, W Wang, S Masudy-Panah, S Yadav, A Kumar, ... IEEE Transactions on Electron Devices 65 (9), 3754-3761, 2018 | 30 | 2018 |
| The first GeSn FinFET on a novel GeSnOI substrate achieving lowest S of 79 mV/decade and record high Gm, int of 807 μS/μm for GeSn P-FETs D Lei, KH Lee, S Bao, W Wang, S Masudy-Panah, S Yadav, A Kumar, ... 2017 Symposium on VLSI Technology, T198-T199, 2017 | 30 | 2017 |
| GaN-on-Si mm-wave RF devices integrated in a 200mm CMOS Compatible 3-Level Cu BEOL B Parvais, A Alian, U Peralagu, R Rodriguez, S Yadav, A Khaled, ... 2020 IEEE International Electron Devices Meeting (IEDM), 8.1. 1-8.1. 4, 2020 | 27 | 2020 |
| SiGe and III-V materials and devices: New HEMT and LED elements in 0.18-micron CMOS process and design EA Fitzgerald, KE Lee, SF Yoon, SJ Chua, CS Tan, GI Ng, X Zhou, ... ECS Transactions 75 (8), 439, 2016 | 20 | 2016 |
| First monolithic integration of Ge P-FETs and InAs N-FETs on silicon substrate: Sub-120 nm III-V buffer, sub-5 nm ultra-thin body, common raised S/D, and gate stack modules S Yadav, KH Tan, KH Goh, S Subramanian, KL Low, N Chen, B Jia, ... 2015 IEEE International Electron Devices Meeting (IEDM), 2.3. 1-2.3. 4, 2015 | 20 | 2015 |
| Heteroepitaxial growth of In0. 30Ga0. 70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer D Kohen, XS Nguyen, S Yadav, A Kumar, RI Made, C Heidelberger, ... AIP Advances 6 (8), 2016 | 17 | 2016 |
| Substrate RF losses and non-linearities in GaN-on-Si HEMT technology S Yadav, P Cardinael, M Zhao, K Vondkar, A Khaled, R Rodriguez, ... 2020 IEEE International Electron Devices Meeting (IEDM), 8.2. 1-8.2. 4, 2020 | 14 | 2020 |
| Monolithic Integration of InAs Quantum-Well n-MOSFETs and Ultrathin Body Ge p-MOSFETs on a Si Substrate S Yadav, KH Tan, A Kumar, KH Goh, G Liang, SF Yoon, X Gong, YC Yeo IEEE Transactions on Electron Devices 64 (2), 353-360, 2017 | 13 | 2017 |
| Gate-All-Around In0.53Ga0.47As Junctionless Nanowire FET With Tapered Source/Drain Structure KH Goh, S Yadav, KL Low, G Liang, X Gong, YC Yeo IEEE Transactions on Electron Devices 63 (3), 1027-1033, 2016 | 13 | 2016 |
| Gate-all-around CMOS (InAs n-FET and GaSb p-FET) based on vertically-stacked nanowires on a Si platform, enabled by extremely-thin buffer layer technology and common gate stack … KH Goh, KH Tan, S Yadav, SF Yoon, G Liang, X Gong, YC Yeo 2015 IEEE International Electron Devices Meeting (IEDM), 15.4. 1-15.4. 4, 2015 | 13 | 2015 |
| From 5G to 6G: Will compound semiconductors make the difference? N Collaert, A Alian, A Banerjee, V Chauhan, RY ElKashlan, B Hsu, ... 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit …, 2020 | 10 | 2020 |
| CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities S Yadav, P Cardinael, M Zhao, K Vondkar, U Peralagu, A Alian, A Khaled, ... 2021 International Conference on IC Design and Technology (ICICDT), 1-4, 2021 | 9 | 2021 |
| Analysis of gate-metal resistance in CMOS-compatible RF GaN HEMTs RY ElKashlan, R Rodriguez, S Yadav, A Khaled, U Peralagu, A Alian, ... IEEE Transactions on Electron Devices 67 (11), 4592-4596, 2020 | 8 | 2020 |
| High mobility In0.30Ga0.70As MOSHEMTs on low threading dislocation density 200 mm Si substrates: A technology enabler towards heterogeneous integration of … S Yadav, A Kumar, XS Nguyen, KH Lee, Z Liu, W Xing, S Masudy-Panah, ... 2017 IEEE International Electron Devices Meeting (IEDM), 17.4. 1-17.4. 4, 2017 | 8 | 2017 |
| Impact of III-N buffer layers on RF losses and harmonic distortion of GaN-on-Si Substrates P Cardinael, S Yadav, M Zhao, M Rack, D Lederer, N Collaert, B Parvais, ... ESSDERC 2021-IEEE 51st European Solid-State Device Research Conference …, 2021 | 7 | 2021 |
| (Plenary) the revival of compound semiconductors and how they will change the world in a 5G/6G era N Collaert, AR Alian, A Banerjee, V Chauhan, RY ElKashlan, B Hsu, ... ECS Transactions 98 (5), 15, 2020 | 7 | 2020 |
| MOCVD growth of high quality InGaAs HEMT layers on large scale Si wafers for heterogeneous integration with Si CMOS XS Nguyen, S Yadav, KH Lee, D Kohen, A Kumar, RI Made, KEK Lee, ... IEEE Transactions on Semiconductor Manufacturing 30 (4), 456-461, 2017 | 7 | 2017 |
| Enabling low power and high speed OEICs: First monolithic integration of InGaAs n-FETs and lasers on Si substrate A Kumar, SY Lee, S Yadav, KH Tan, WK Loke, D Li, S Wicaksono, ... 2017 Symposium on VLSI Technology, T56-T57, 2017 | 7 | 2017 |
| Back barrier trapping induced resistance dispersion in GaN HEMT: mechanism, modeling, and solutions H Yu, B Parvais, U Peralagu, RY ElKashlan, R Rodriguez, A Khaled, ... 2022 International Electron Devices Meeting (IEDM), 30.6. 1-30.6. 4, 2022 | 6 | 2022 |
| Time dependence of RF losses in GaN-on-Si substrates P Cardinael, S Yadav, M Zhao, M Rack, D Lederer, N Collaert, B Parvais, ... IEEE Microwave and Wireless Components Letters 32 (6), 688-691, 2022 | 6 | 2022 |
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