| Graphene and two-dimensional materials for silicon technology D Akinwande, C Huyghebaert, CH Wang, MI Serna, S Goossens, LJ Li, ... Nature 573 (7775), 507-518, 2019 | 1171 | 2019 |
| Method for producing interconnect structures for integrated circuits C Huyghebaert, J Vaes, J Van Olmen US Patent 8,252,659, 2012 | 424 | 2012 |
| Graphene-based integrated photonics for next-generation datacom and telecom M Romagnoli, V Sorianello, M Midrio, FHL Koppens, C Huyghebaert, ... Nature Reviews Materials 3 (10), 392-414, 2018 | 374 | 2018 |
| Graphene–silicon phase modulators with gigahertz bandwidth V Sorianello, M Midrio, G Contestabile, I Asselberghs, J Van Campenhout, ... Nature Photonics 12 (1), 40-44, 2018 | 342 | 2018 |
| 2D materials for future heterogeneous electronics MC Lemme, D Akinwande, C Huyghebaert, C Stampfer Nature communications 13 (1), 1392, 2022 | 236 | 2022 |
| Broadband 10 Gb/s operation of graphene electro‐absorption modulator on silicon Y Hu, M Pantouvaki, J Van Campenhout, S Brems, I Asselberghs, ... Laser & Photonics Reviews 10 (2), 307-316, 2016 | 189 | 2016 |
| 3D stacked IC demonstration using a through silicon via first approach J Van Olmen, A Mercha, G Katti, C Huyghebaert, J Van Aelst, E Seppala, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 182 | 2008 |
| High-quality, large-area MoSe 2 and MoSe 2/Bi 2 Se 3 heterostructures on AlN (0001)/Si (111) substrates by molecular beam epitaxy E Xenogiannopoulou, P Tsipas, KE Aretouli, D Tsoutsou, SA Giamini, ... Nanoscale 7 (17), 7896-7905, 2015 | 154 | 2015 |
| Analysis of trap-assisted tunneling in vertical Si homo-junction and SiGe hetero-junction tunnel-FETs A Vandooren, D Leonelli, R Rooyackers, A Hikavyy, K Devriendt, ... Solid-State Electronics 83, 50-55, 2013 | 147 | 2013 |
| Fabrication and Analysis of a Heterojunction Line Tunnel FET AM Walke, A Vandooren, R Rooyackers, D Leonelli, A Hikavyy, R Loo, ... IEEE Transactions on Electron Devices 61 (3), 707-715, 2014 | 143 | 2014 |
| 2D materials: roadmap to CMOS integration C Huyghebaert, T Schram, Q Smets, TK Agarwal, D Verreck, S Brems, ... 2018 IEEE International Electron Devices Meeting (IEDM), 22.1. 1-22.1. 4, 2018 | 94 | 2018 |
| 3D stacked ICs using Cu TSVs and die to wafer hybrid collective bonding G Katti, A Mercha, J Van Olmen, C Huyghebaert, A Jourdain, M Stucchi, ... 2009 IEEE international electron devices meeting (IEDM), 1-4, 2009 | 86 | 2009 |
| Heavy ion implantation in Ge: Dramatic radiation induced morphology in Ge T Janssens, C Huyghebaert, D Vanhaeren, G Winderickx, A Satta, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006 | 85 | 2006 |
| Advancing CMOS beyond the Si roadmap with Ge and III/V devices M Heyns, A Alian, G Brammertz, M Caymax, YC Chang, LK Chu, ... 2011 International Electron Devices Meeting, 13.1. 1-13.1. 4, 2011 | 82 | 2011 |
| Integration challenges of copper through silicon via (TSV) metallization for 3D-stacked IC integration J Van Olmen, C Huyghebaert, J Coenen, J Van Aelst, E Sleeckx, ... Microelectronic Engineering 88 (5), 745-748, 2011 | 82 | 2011 |
| Yield, variability, reliability, and stability of two-dimensional materials based solid-state electronic devices M Lanza, Q Smets, C Huyghebaert, LJ Li Nature communications 11 (1), 5689, 2020 | 79 | 2020 |
| Controlled Sulfurization Process for the Synthesis of Large Area MoS2 Films and MoS2/WS2 Heterostructures D Chiappe, I Asselberghs, S Sutar, S Iacovo, V Afanas' ev, A Stesmans, ... Advanced Materials Interfaces 3 (4), 1500635, 2016 | 79 | 2016 |
| Impact of process and geometrical parameters on the electrical characteristics of vertical nanowire silicon n-TFETs A Vandooren, D Leonelli, R Rooyackers, K Arstila, G Groeseneken, ... Solid-State Electronics 72, 82-87, 2012 | 76 | 2012 |
| From the metal to the channel: A study of carrier injection through the metal/2D MoS 2 interface G Arutchelvan, CJL de la Rosa, P Matagne, S Sutar, I Radu, ... Nanoscale 9 (30), 10869-10879, 2017 | 73 | 2017 |
| Tunable doping of graphene by using physisorbed self-assembled networks R Phillipson, CJL De La Rosa, J Teyssandier, P Walke, D Waghray, ... Nanoscale 8 (48), 20017-20026, 2016 | 70 | 2016 |
