Madhushankar B N
Madhushankar B N
PhD at University of Groningen, Netherlands
Verified email at - Homepage
TitleCited byYear
Low Schottky Barrier Black Phosphorus Field‐Effect Devices with Ferromagnetic Tunnel Contacts
MV Kamalakar, BN Madhushankar, A Dankert, SP Dash
Small 11 (18), 2209-2216, 2015
Electronic properties of germanane field-effect transistors
BN Madhushankar, A Kaverzin, T Giousis, G Potsi, D Gournis, P Rudolf, ...
2D Materials 4 (2), 021009, 2017
Effect of high-k dielectric and ionic liquid gate on nanolayer black-phosphorus field effect transistors
MV Kamalakar, BN Madhushankar, A Dankert, SP Dash
Applied Physics Letters 107 (11), 113103, 2015
Water-Gated Phospholipid-Monolayer Organic Field Effect Transistor Through Modified Mueller―Montal Method
KS Narayan, BN Madhushankar, V Gautam, SP Senanayak, R Shivanna
IEEE electron device letters 34 (2), 310-312, 2013
Large spin-relaxation anisotropy in bilayer-graphene/WS heterostructures
S Omar, BN Madhushankar, BJ van Wees
arXiv preprint arXiv:1907.01975, 2019
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Articles 1–5