| Experiments and root cause analysis for active-precharge hammering fault in DDR3 SDRAM under 3× nm technology K Park, C Lim, D Yun, S Baeg Microelectronics reliability 57, 39-46, 2016 | 58 | 2016 |
| Stuck bits study in DDR3 SDRAMs using 45-MeV proton beam C Lim, HS Jeong, G Bak, S Baeg, SJ Wen, R Wong IEEE Transactions on Nuclear Science 62 (2), 520-526, 2015 | 24 | 2015 |
| Study of TID effects on one row hammering using gamma in DDR4 SDRAMs D Yun, M Park, C Lim, S Baeg 2018 IEEE International Reliability Physics Symposium (IRPS), P-SE. 2-1-P-SE …, 2018 | 18 | 2018 |
| Active precharge hammering to monitor displacement damage using high-energy protons in 3x-nm SDRAM C Lim, K Park, S Baeg IEEE Transactions on Nuclear Science 64 (2), 859-866, 2016 | 15 | 2016 |
| Soft error study on DDR4 SDRAMs using a 480 MeV proton beam M Park, SH Jeon, GY Bak, C Lim, S Baeg, SJ Wen, R Wong, N Yu 2017 IEEE International Reliability Physics Symposium (IRPS), SE-3.1-SE-3.6, 2017 | 11 | 2017 |
| Study of proton radiation effect to row hammer fault in DDR4 SDRAMs C Lim, K Park, G Bak, D Yun, M Park, S Baeg, SJ Wen, R Wong Microelectronics Reliability 80, 85-90, 2018 | 9 | 2018 |
| An alternative approach to measure alpha-particle-induced SEU cross-section for flip-chip packaged SRAM devices: High energy alpha backside irradiation SA Khan, C Lim, G Bak, S Baeg, S Lee Microelectronics Reliability 69, 100-108, 2017 | 5 | 2017 |
| Soft error issues with scaling technologies S Baeg, J Bae, S Lee, CS Lim, SH Jeon, H Nam 2012 IEEE 21st Asian Test Symposium, 68-68, 2012 | 5 | 2012 |
