| Periodic optical variability of radio-detected ultracool dwarfs LK Harding, G Hallinan, RP Boyle, A Golden, N Singh, B Sheehan, ... The Astrophysical Journal 779 (2), 101, 2013 | 58 | 2013 |
| The Characterization and Passivation of Fixed Oxide Charges and Interface States in the MOS System PK Hurley, É O'Connor, V Djara, S Monaghan, IM Povey, RD Long, ... IEEE Transactions on Device and Materials Reliability 13 (4), 429-443, 2013 | 56 | 2013 |
| The Galway astronomical Stokes polarimeter: an all-Stokes optical polarimeter with ultra-high time resolution P Collins, G Kyne, D Lara, M Redfern, A Shearer, B Sheehan Experimental Astronomy 36 (3), 479-503, 2013 | 33 | 2013 |
| Back-gated Nb-doped MoS2 junctionless field-effect-transistors G Mirabelli, M Schmidt, B Sheehan, K Cherkaoui, S Monaghan, I Povey, ... AIP Advances 6 (2), 025323, 2016 | 32 | 2016 |
| Diagnosis of phosphorus monolayer doping in silicon based on nanowire electrical characterisation R Duffy, A Ricchio, R Murphy, G Maxwell, R Murphy, G Piaszenski, ... Journal of Applied Physics 123 (12), 125701, 2018 | 23 | 2018 |
| Large-area growth of MoS2 at temperatures compatible with integrating back-end-of-line functionality J Lin, S Monaghan, N Sakhuja, F Gity, RK Jha, EM Coleman, J Connolly, ... 2D Materials 8 (2), 025008, 2020 | 22 | 2020 |
| Examining the relationship between capacitance-voltage hysteresis and accumulation frequency dispersion in InGaAs metal-oxide-semiconductor structures based on the response to … J Lin, S Monaghan, K Cherkaoui, IM Povey, B Sheehan, PK Hurley Microelectronic Engineering 178, 204-208, 2017 | 21 | 2017 |
| Stencil lithography of superconducting contacts on MBE-grown topological insulator thin films P Schüffelgen, D Rosenbach, E Neumann, MP Stehno, M Lanius, J Zhao, ... Journal of crystal growth 477, 183-187, 2017 | 20 | 2017 |
| A study of capacitance–voltage hysteresis in the HfO2/InGaAs metal-oxide-semiconductor system J Lin, S Monaghan, K Cherkaoui, I Povey, É O’Connor, B Sheehan, ... Microelectronic Engineering 147, 273-276, 2015 | 18 | 2015 |
| Engineering the interface chemistry for scandium electron contacts in WSe2 transistors and diodes CM Smyth, LA Walsh, P Bolshakov, M Catalano, M Schmidt, B Sheehan, ... 2D Materials 6 (4), 045020, 2019 | 15 | 2019 |
| Design, construction and calibration of the Galway astronomical Stokes polarimeter (GASP) P Collins, RM Redfern, B Sheehan AIP Conference Proceedings 984 (1), 241-246, 2008 | 13 | 2008 |
| Structural and Electrical Investigation of MoS2 Thin Films Formed by Thermal Assisted Conversion of Mo Metal R Duffy, P Foley, B Filippone, G Mirabelli, D O'Connell, B Sheehan, ... ECS Journal of Solid State Science and Technology 5 (11), Q3016, 2016 | 11 | 2016 |
| Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0.53Ga0.47As capacitors S Monaghan, É O'Connor, IM Povey, BJ Sheehan, K Cherkaoui, ... Journal of Vacuum Science & Technology B, Nanotechnology and …, 2013 | 9 | 2013 |
| Investigating positive oxide charge in the SiO2/3C-SiC MOS system K Cherkaoui, A Blake, YY Gomeniuk, J Lin, B Sheehan, M White, ... AIP Advances 8 (8), 085323, 2018 | 8 | 2018 |
| Inversion in the In0.53Ga0.47As metal-oxide-semiconductor system: Impact of the In0.53Ga0.47As doping concentration É O'Connor, K Cherkaoui, S Monaghan, B Sheehan, IM Povey, PK Hurley Applied Physics Letters 110 (3), 032902, 2017 | 8 | 2017 |
| Device and Materials Reliability P Hurley, E O’Connor, V Djara, S Monaghan, I Povey, R Long, B Sheehan, ... IEEE Transactions on 13, 429, 2013 | 8 | 2013 |
| ASP Conf. Ser. Vol. 448, 16th Cambridge Workshop on Cool Stars, Stellar Systems, and the Sun LK Harding, G Hallinan, RP Boyle, RF Butler, B Sheehan, A Golden, ... Astron. Soc. Pac., San Francisco, 2011 | 6* | 2011 |
| GASP-Galway astronomical Stokes polarimeter G Kyne, B Sheehan, P Collins, M Redfern, A Shearer European Physical Journal Web of Conferences], European Physical Journal Web …, 2010 | 6 | 2010 |
| Effect of forming gas annealing on the inversion response and minority carrier generation lifetime of n and p-In0. 53Ga0. 47As MOS capacitors É O’Connor, K Cherkaoui, S Monaghan, B Sheehan, IM Povey, PK Hurley Microelectronic Engineering 147, 325-329, 2015 | 5 | 2015 |
| Development and use of an L3CCD high‐cadence imaging system for Optical Astronomy BJ Sheehan, RF Butler AIP Conference Proceedings 984 (1), 162-167, 2008 | 5 | 2008 |
