| Statistical-variability compact-modeling strategies for BSIM4 and PSP B Cheng, D Dideban, N Moezi, C Millar, G Roy, X Wang, S Roy, A Asenov IEEE Design & Test of Computers 27 (2), 26-35, 2010 | 72 | 2010 |
| A novel graphene tunnelling field effect transistor (GTFET) using bandgap engineering MS Mobarakeh, N Moezi, M Vali, D Dideban Superlattices and Microstructures 100, 1221-1229, 2016 | 39 | 2016 |
| A novel integrated SET based inverter for nano power electronic applications N Moezi, D Dideban, A Ketabi Am. J. Eng. Applied Sci 1, 219-222, 2008 | 32 | 2008 |
| Germanene nanoribbon tunneling field effect transistor (GeNR-TFET) with a 10 nm channel length: analog performance, doping and temperature effects AH Bayani, D Dideban, M Vali, N Moezi Semiconductor Science and Technology 31 (4), 045009, 2016 | 30 | 2016 |
| Investigation of sub-10nm cylindrical surrounding gate germanium nanowire field effect transistor with different cross-section areas AH Bayani, D Dideban, J Voves, N Moezi Superlattices and Microstructures 105, 110-116, 2017 | 21 | 2017 |
| Silicene field effect transistor with high on/off current ratio and good current saturation M Vali, D Dideban, N Moezi Journal of Computational Electronics 15, 138-143, 2016 | 21 | 2016 |
| Hydrogen sensitive field-effect transistor based on germanene nanoribbon and optical properties of hydrogenated germanene AH Bayani, D Dideban, N Moezi Journal of Computational Electronics 15 (2), 381-388, 2016 | 19 | 2016 |
| Modeling and simulation of transistor and circuit variability and reliability A Asenov, B Cheng, D Dideban, U Kovac, N Moezi, C Millar, G Roy, ... IEEE Custom Integrated Circuits Conference 2010, 1-8, 2010 | 19 | 2010 |
| Impact of uniaxial compressive strain on physical and electronic parameters of a 10 nm germanene nanoribbon field effect transistor AH Bayani, D Dideban, N Moezi Superlattices and Microstructures 100, 198-208, 2016 | 17 | 2016 |
| A scheme for a topological insulator field effect transistor M Vali, D Dideban, N Moezi Physica E: Low-dimensional Systems and Nanostructures 69, 360-363, 2015 | 17 | 2015 |
| A novel approach to the statistical generation of non-normal distributed PSP compact model parameters using a nonlinear power method U Kovac, D Dideban, B Cheng, N Moezi, G Roy, A Asenov 2010 International Conference on Simulation of Semiconductor Processes and …, 2010 | 14 | 2010 |
| Benchmarking performance of a gate-all-around germanium nanotube field effect transistor (GAA-GeNTFET) against GAA-CNTFET AH Bayani, D Dideban, M Akbarzadeh, N Moezi ECS Journal of Solid State Science and Technology 6 (4), M24, 2017 | 13 | 2017 |
| Impact of statistical parameter set selection on the statistical compact model accuracy: BSIM4 and PSP case study N Moezi, D Dideban, B Cheng, S Roy, A Asenov Microelectronics Journal 44 (1), 7-14, 2013 | 13 | 2013 |
| A half adder design based on ternary multiplexers in carbon nano-tube field effect transistor (CNFET) technology E Nikbakht, D Dideban, N Moezi ECS Journal of Solid State Science and Technology 9 (8), 081001, 2020 | 12 | 2020 |
| Quantum well resonant tunneling FET based on topological insulator M Vali, D Dideban, N Moezi Superlattices and Microstructures 100, 1256-1262, 2016 | 10 | 2016 |
| Drain current collapse in nanoscaled bulk MOSFETs due to random dopant compensation in the source/drain extensions S Markov, X Wang, N Moezi, A Asenov IEEE transactions on electron devices 58 (8), 2385-2393, 2011 | 10 | 2011 |
| Improvement of tunnel field effect transistor performance using auxiliary gate and retrograde doping in the channel M Karbalaei, D Dideban, N Moezi Journal of Electrical and Computer Engineering Innovations (JECEI) 7 (1), 27-33, 2018 | 8 | 2018 |
| Benchmarking the accuracy of PCA generated statistical compact model parameters against physical device simulation and directly extracted statistical parameters B Cheng, N Moezi, D Dideban, G Roy, S Roy, A Asenov 2009 International Conference on Simulation of Semiconductor Processes and …, 2009 | 8 | 2009 |
| Improvement of a nano-scale silicon on insulator field effect transistor performance using electrode, doping and buried oxide engineering D Dideban, M Karbalaei, N Moezi, H Heidari Journal of Nanostructures 10 (2), 317-326, 2020 | 5 | 2020 |
| Statistical compact model strategies for nano CMOS transistors subject of atomic scale variability N Moezi University of Glasgow, 2012 | 5 | 2012 |
Daryoosh DidebanAssociate professor of electronics and electrical engineering, University of KashanVerified email at kashanu.ac.ir
