Negin Moezi
Negin Moezi
Assistant Professor of nano-Electronics, Technical and Vocational University
Verified email at tvu.ac.ir
TitleCited byYear
Statistical-variability compact-modeling strategies for BSIM4 and PSP
B Cheng, D Dideban, N Moezi, C Millar, G Roy, X Wang, S Roy, A Asenov
IEEE Design & Test of Computers 27 (2), 26-35, 2010
622010
A novel integrated SET based inverter for nano power electronic applications
N Moezi, D Dideban, A Ketabi
Am. J. Engg. & Applied Sci 1 (3), 219-222, 2008
242008
Germanene nanoribbon tunneling field effect transistor (GeNR-TFET) with a 10 nm channel length: analog performance, doping and temperature effects
AH Bayani, D Dideban, M Vali, N Moezi
Semiconductor Science and Technology 31 (4), 045009, 2016
152016
Modeling and simulation of transistor and circuit variability and reliability
A Asenov, B Cheng, D Dideban, U Kovac, N Moezi, C Millar, G Roy, ...
IEEE Custom Integrated Circuits Conference 2010, 1-8, 2010
152010
A novel graphene tunnelling field effect transistor (GTFET) using bandgap engineering
MS Mobarakeh, N Moezi, M Vali, D Dideban
Superlattices and Microstructures 100, 1221-1229, 2016
122016
Hydrogen sensitive field-effect transistor based on germanene nanoribbon and optical properties of hydrogenated germanene
AH Bayani, D Dideban, N Moezi
Journal of Computational Electronics 15 (2), 381-388, 2016
112016
Impact of statistical parameter set selection on the statistical compact model accuracy: BSIM4 and PSP case study
N Moezi, D Dideban, B Cheng, S Roy, A Asenov
Microelectronics Journal 44 (1), 7-14, 2013
102013
A novel approach to the statistical generation of non-normal distributed PSP compact model parameters using a nonlinear power method
U Kovac, D Dideban, B Cheng, N Moezi, G Roy, A Asenov
2010 International Conference on Simulation of Semiconductor Processes and …, 2010
102010
Investigation of sub-10nm cylindrical surrounding gate germanium nanowire field effect transistor with different cross-section areas
AH Bayani, D Dideban, J Voves, N Moezi
Superlattices and Microstructures 105, 110-116, 2017
82017
A scheme for a topological insulator field effect transistor
M Vali, D Dideban, N Moezi
Physica E: Low-dimensional Systems and Nanostructures 69, 360-363, 2015
82015
Impact of uniaxial compressive strain on physical and electronic parameters of a 10 nm germanene nanoribbon field effect transistor
AH Bayani, D Dideban, N Moezi
Superlattices and Microstructures 100, 198-208, 2016
72016
Drain current collapse in nanoscaled bulk MOSFETs due to random dopant compensation in the source/drain extensions
S Markov, X Wang, N Moezi, A Asenov
IEEE Transactions on Electron Devices 58 (8), 2385-2393, 2011
72011
Benchmarking the accuracy of PCA generated statistical compact model parameters against physical device simulation and directly extracted statistical parameters
B Cheng, N Moezi, D Dideban, G Roy, S Roy, A Asenov
2009 International Conference on Simulation of Semiconductor Processes and …, 2009
72009
Silicene field effect transistor with high on/off current ratio and good current saturation
M Vali, D Dideban, N Moezi
Journal of Computational Electronics 15 (1), 138-143, 2016
62016
Quantum well resonant tunneling FET based on topological insulator
M Vali, D Dideban, N Moezi
Superlattices and Microstructures 100, 1256-1262, 2016
52016
Benchmarking performance of a gate-all-around germanium nanotube field effect transistor (GAA-GeNTFET) against GAA-CNTFET
AH Bayani, D Dideban, M Akbarzadeh, N Moezi
ECS Journal of Solid State Science and Technology 6 (4), M24-M28, 2017
42017
Statistical compact model strategies for nano CMOS transistors subject of atomic scale variability
N Moezi
University of Glasgow, 2012
22012
Capturing intrinsic parameter fluctuations using the PSP compact model
B Cheng, D Dideban, N Moezi, C Millar, G Roy, X Wang, S Roy, A Asenov
Proceedings of the Conference on Design, Automation and Test in Europe, 650-653, 2010
12010
Impact of input slew rate on statistical timing and power dissipation variability in nanoCMOS
D Dideban, B Cheng, N Moezi, NA Kamsani, C Millar, S Roy, A Asenov
Proc. Ultimate Integr. Silicon, 45-48, 2010
12010
Improvement of a nano-scale silicon on insulator field effect transistor performance using electrode, doping and buried oxide engineering
D Dideban, M Karbalaei, N Moezi, H Heidari
Journal of Nanostructures, 2019
2019
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Articles 1–20