Qimiao Chen
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High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 Ám
H Zhou, S Xu, Y Lin, YC Huang, B Son, Q Chen, X Guo, KH Lee, SCK Goh, ...
Optics express 28 (7), 10280-10293, 2020
Bi2Te3 photoconductive detectors on Si
J Liu, Y Li, Y Song, Y Ma, Q Chen, Z Zhu, P Lu, S Wang
Applied Physics Letters 110 (14), 141109, 2017
Metal-semiconductor-metal GeSn photodetectors on silicon for short-wave infrared applications
S Ghosh, KC Lin, CH Tsai, H Kumar, Q Chen, L Zhang, B Son, CS Tan, ...
Micromachines 11 (9), 795, 2020
Vibrational properties of epitaxial Bi4Te3 films as studied by Raman spectroscopy
H Xu, Y Song, W Pan, Q Chen, X Wu, P Lu, Q Gong, S Wang
AIP Advances 5 (8), 087103, 2015
A new route toward light emission from Ge: tensile-strained quantum dots
Q Chen, Y Song, K Wang, L Yue, P Lu, Y Li, Q Gong, S Wang
Nanoscale 7 (19), 8725-8730, 2015
Dark current analysis of germanium-on-insulator vertical p-i-n photodetectors with varying threading dislocation density
B Son, Y Lin, KH Lee, Q Chen, CS Tan
Journal of Applied Physics 127 (20), 203105, 2020
Detailed study of the influence of InGaAs matrix on the strain reduction in the InAs dot-in-well structure
P Wang, Q Chen, X Wu, C Cao, S Wang, Q Gong
Nanoscale research letters 11, 1-6, 2016
Resonant-cavity-enhanced responsivity in germanium-on-insulator photodetectors
S Ghosh, KC Lin, CH Tsai, KH Lee, Q Chen, B Son, B Mukhopadhyay, ...
Optics Express 28 (16), 23739-23747, 2020
Structural properties of GeSn thin films grown by molecular beam epitaxy
ZP Zhang, YX Song, ZYS Zhu, Y Han, QM Chen, YY Li, LY Zhang, ...
AIP Advances 7 (4), 045211, 2017
Novel type II InGaAs/GaAsBi quantum well for longer wavelength emission
L Yue, Y Song, X Chen, Q Chen, W Pan, X Wu, J Liu, L Zhang, J Shao, ...
Journal of Alloys and Compounds 695, 753-759, 2017
High-Performance Back-Illuminated Ge0.92Sn0.08/Ge Multiple-Quantum-Well Photodetector on Si Platform For SWIR Detection
S Wu, S Xu, H Zhou, Y Jin, Q Chen, YC Huang, L Zhang, X Gong, CS Tan
IEEE Journal of Selected Topics in Quantum Electronics 28 (2: Opticalá…, 2021
Highly tensile-strained self-assembled Ge quantum dots on InP substrates for integrated light sources
Q Chen, L Zhang, Y Song, X Chen, S Koelling, Z Zhang, Y Li, ...
ACS Applied Nano Materials 4 (1), 897-906, 2021
Surface plasmon enhanced GeSn photodetectors operating at 2 Ám
H Zhou, L Zhang, J Tong, S Wu, B Son, Q Chen, DH Zhang, CS Tan
Optics express 29 (6), 8498-8509, 2021
Growth mode of tensile-strained Ge quantum dots grown by molecular beam epitaxy
ZP Zhang, YX Song, QM Chen, XY Wu, ZYS Zhu, LY Zhang, YY Li, ...
Journal of Physics D: Applied Physics 50 (46), 465301, 2017
Insights into the origins of guided microtrenches and Microholes/rings from Sn segregation in germanium–tin epilayers
S Wu, L Zhang, B Son, Q Chen, H Zhou, CS Tan
The Journal of Physical Chemistry C 124 (37), 20035-20045, 2020
Growth and characterizations of GeSn films with high Sn composition by chemical vapor deposition (CVD) using Ge2H6 and SnCl4 for mid-IR applications
L Zhang, Q Chen, S Wu, BK Son, KH Lee, GY Chong, CS Tan
ECS Transactions 98 (5), 91, 2020
GeSn-on-insulator dual-waveband resonant-cavity-enhanced photodetectors at the 2 Ám and 1.55 Ám optical communication bands
Q Chen, S Wu, L Zhang, D Burt, H Zhou, D Nam, W Fan, CS Tan
Optics Letters 46 (15), 3809-3812, 2021
Simulation of high-efficiency resonant-cavity-enhanced GeSn single-photon avalanche photodiodes for sensing and optical quantum applications
Q Chen, S Wu, L Zhang, W Fan, CS Tan
IEEE Sensors Journal 21 (13), 14789-14798, 2021
InPBi quantum dots for super-luminescence diodes
L Zhang, Y Song, Q Chen, Z Zhu, S Wang
Nanomaterials 8 (9), 705, 2018
Transferable single-layer GeSn nanomembrane resonant-cavity-enhanced photodetectors for 2 μm band optical communication and multi-spectral short-wave infrared sensing
Q Chen, S Wu, L Zhang, H Zhou, W Fan, CS Tan
Nanoscale 14 (19), 7341-7349, 2022
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