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James T. Gibbon
James T. Gibbon
Stephenson Institute for Renewable Energy, University of Liverpool
Verified email at liverpool.ac.uk
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Cited by
Year
Core Levels, Band Alignments, and Valence-Band States in CuSbS2 for Solar Cell Applications
TJ Whittles, TD Veal, CN Savory, AW Welch, FW de Souza Lucas, ...
ACS applied materials & interfaces 9 (48), 41916-41926, 2017
802017
Transition from electron accumulation to depletion at β-Ga2O3 surfaces: The role of hydrogen and the charge neutrality level
JEN Swallow, JB Varley, LAH Jones, JT Gibbon, LFJ Piper, VR Dhanak, ...
APL Materials 7 (2), 2019
792019
The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM
N Sedghi, H Li, IF Brunell, K Dawson, RJ Potter, Y Guo, JT Gibbon, ...
Applied Physics Letters 110 (10), 2017
682017
Low‐Temperature Wafer‐Scale Deposition of Continuous 2D SnS2 Films
M Mattinen, PJ King, L Khriachtchev, K Meinander, JT Gibbon, ...
Small 14 (21), 1800547, 2018
592018
Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition
JW Roberts, PR Chalker, B Ding, RA Oliver, JT Gibbon, LAH Jones, ...
Journal of Crystal Growth 528, 125254, 2019
512019
Band Alignments, Band Gap, Core Levels, and Valence Band States in Cu3BiS3 for Photovoltaics
TJ Whittles, TD Veal, CN Savory, PJ Yates, PAE Murgatroyd, JT Gibbon, ...
ACS applied materials & interfaces 11 (30), 27033-27047, 2019
442019
Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping
N Sedghi, H Li, IF Brunell, K Dawson, Y Guo, RJ Potter, JT Gibbon, ...
Applied Physics Letters 111 (9), 2017
222017
Band alignments at Ga2O3 heterojunction interfaces with Si and Ge
JT Gibbon, L Jones, JW Roberts, M Althobaiti, PR Chalker, IZ Mitrovic, ...
AIP Advances 8 (6), 065011, 2018
202018
Band gap temperature-dependence and exciton-like state in copper antimony sulphide, CuSbS2
M Birkett, CN Savory, MK Rajpalke, WM Linhart, TJ Whittles, G James T, ...
APL Materials 6 (8), 084904, 2018
202018
Defect limitations in Cu2ZnSn (S, Se) 4 solar cells utilizing an In2S3 buffer layer
S Campbell, Y Qu, J Gibbon, HJ Edwards, VR Dhanak, D Tiwari, V Barrioz, ...
Journal of Applied Physics 127 (20), 2020
182020
Chemical Control of the Dimensionality of the Octahedral Network of Solar Absorbers from the CuI–AgI–BiI3 Phase Space by Synthesis of 3D CuAgBiI5
HC Sansom, LRV Buizza, M Zanella, JT Gibbon, MJ Pitcher, MS Dyer, ...
Inorganic Chemistry 60 (23), 18154-18167, 2021
172021
Schottky diodes on ZnO thin films grown by plasma-enhanced atomic layer deposition
J Jin, JS Wrench, JT Gibbon, D Hesp, A Shaw, IZ Mitrovic, N Sedghi, ...
IEEE Transactions on Electron Devices 64 (3), 1225-1230, 2017
122017
APL Mater. 7, 022528 (2019)
JEN Swallow, JB Varley, LAH Jones, JT Gibbon, LFJ Piper, VR Dhanak, ...
11
Experimental band alignment of Ta2O5/GaN for MIS-HEMT applications
K Sawangsri, P Das, SN Supardan, IZ Mitrovic, S Hall, R Mahapatra, ...
Microelectronic Engineering 178, 178-181, 2017
102017
Tunable crystal structure of Cu2SnS3 deposited by spray pyrolysis and its impact on the chemistry and electronic structure
R Garza-Hernández, HJ Edwards, JT Gibbon, MR Alfaro-Cruz, ...
Journal of Alloys and Compounds 881, 160552, 2021
52021
Properties of Transition Metal Dichalcogenides
JT Gibbon, VR Dhanak
Two Dimensional Transition Metal Dichalcogenides: Synthesis, Properties, and …, 2019
52019
Band Line-up of High-k Oxides on GaN
IZ Mitrovic, P Das, L Jones, J Gibbon, VR Dhanak, R Mahapatra, ...
ECS Transactions 97 (1), 67, 2020
22020
3 Comparison of Cu2ZnSn (SxSe1-x) 4 (0≤ x≤ 1) Thin Films & Crystals
HJ Edwards, S Gupta, JT Gibbon, JEN Swallow, TJ Featherstone, ...
Synthesis and Characterisation of Kesterite Thin Films and Single Crystals …, 2022
12022
Band line-up investigation of atomic layer deposited TiAlO and GaAlO on GaN
P Das, LAH Jones, JT Gibbon, VR Dhanak, T Partida-Manzanera, ...
ECS Journal of Solid State Science and Technology 9 (6), 063003, 2020
12020
Band Alignments and Interfaces in Kesterite Photovoltaics
JT Gibbon
PQDT-Global, 2019
12019
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