Isabelle Ferain
Isabelle Ferain
Verified email at globalfoundries.com
Title
Cited by
Cited by
Year
Nanowire transistors without junctions
JP Colinge, CW Lee, A Afzalian, ND Akhavan, R Yan, I Ferain, P Razavi, ...
Nature nanotechnology 5 (3), 225-229, 2010
20652010
Junctionless multigate field-effect transistor
CW Lee, A Afzalian, ND Akhavan, R Yan, I Ferain, JP Colinge
Applied Physics Letters 94 (5), 053511, 2009
9482009
Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors
I Ferain, CA Colinge, JP Colinge
Nature 479 (7373), 310-316, 2011
8052011
Performance estimation of junctionless multigate transistors
CW Lee, I Ferain, A Afzalian, R Yan, ND Akhavan, P Razavi, JP Colinge
Solid-State Electronics 54 (2), 97-103, 2010
5042010
High-temperature performance of silicon junctionless MOSFETs
CW Lee, A Borne, I Ferain, A Afzalian, R Yan, ND Akhavan, P Razavi, ...
IEEE transactions on electron devices 57 (3), 620-625, 2010
3492010
Junctionless nanowire transistor (JNT): Properties and design guidelines
JP Colinge, A Kranti, R Yan, CW Lee, I Ferain, R Yu, ND Akhavan, ...
Solid-State Electronics 65, 33-37, 2011
3202011
Transport spectroscopy of a single dopant in a gated silicon nanowire
H Sellier, GP Lansbergen, J Caro, S Rogge, N Collaert, I Ferain, ...
Physical Review Letters 97 (20), 206805, 2006
3062006
Reduced electric field in junctionless transistors
JP Colinge, CW Lee, I Ferain, ND Akhavan, R Yan, P Razavi, R Yu, ...
Applied Physics Letters 96 (7), 073510, 2010
2982010
Low subthreshold slope in junctionless multigate transistors
CW Lee, AN Nazarov, I Ferain, ND Akhavan, R Yan, P Razavi, R Yu, ...
Applied Physics Letters 96 (10), 102106, 2010
2392010
Junctionless multiple-gate transistors for analog applications
RT Doria, MA Pavanello, RD Trevisoli, M de Souza, CW Lee, I Ferain, ...
IEEE Transactions on Electron Devices 58 (8), 2511-2519, 2011
2222011
Junctionless nanowire transistor (JNT): Properties and design guidelines
A Kranti, R Yan, CW Lee, I Ferain, R Yu, ND Akhavan, P Razavi, ...
2010 Proceedings of the European Solid State Device Research Conference, 357-360, 2010
2182010
SOI gated resistor: CMOS without junctions
JP Colinge, CW Lee, A Afzalian, N Dehdashti, R Yan, I Ferain, P Razavi, ...
2009 IEEE International SOI Conference, 1-2, 2009
1462009
Multi-gate devices for the 32 nm technology node and beyond
N Collaert, A De Keersgieter, A Dixit, I Ferain, LS Lai, D Lenoble, ...
Solid-State Electronics 52 (9), 1291-1296, 2008
1242008
Surface-potential-based drain current analytical model for triple-gate junctionless nanowire transistors
RD Trevisoli, RT Doria, M de Souza, S Das, I Ferain, MA Pavanello
IEEE Transactions on Electron Devices 59 (12), 3510-3518, 2012
992012
Tall triple-gate devices with TiN/HfO/sub 2/gate stack
N Collaert, M Demand, I Ferain, J Lisoni, R Singanamalla, P Zimmerman, ...
Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 108-109, 2005
922005
Junctionless transistors: physics and properties
JP Colinge, CW Lee, ND Akhavan, R Yan, I Ferain, P Razavi, A Kranti, ...
Semiconductor-On-Insulator Materials for Nanoelectronics Applications, 187-200, 2011
892011
Mobility improvement in nanowire junctionless transistors by uniaxial strain
JP Raskin, JP Colinge, I Ferain, A Kranti, CW Lee, ND Akhavan, R Yan, ...
Applied Physics Letters 97 (4), 042114, 2010
572010
Junctionless 6T SRAM cell
A Kranti, CW Lee, I Ferain, R Yan, N Akhavan, P Razavi, R Yu, ...
Electronics letters 46 (22), 1491-1493, 2010
522010
Subthreshold channels at the edges of nanoscale triple-gate silicon transistors
H Sellier, GP Lansbergen, J Caro, S Rogge, N Collaert, I Ferain, ...
Applied physics letters 90 (7), 073502, 2007
502007
Junctionless nanowire transistor: complementary metal-oxide-semiconductor without junctions
JP Colinge, I Ferain, A Kranti, CW Lee, ND Akhavan, P Razavi, R Yan, ...
Science of Advanced Materials 3 (3), 477-482, 2011
472011
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