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June-Mo Yang
June-Mo Yang
Sungkyunkwan University Chemical engineering
Verified email at skku.edu
Title
Cited by
Cited by
Year
Verification and mitigation of ion migration in perovskite solar cells
JW Lee, SG Kim, JM Yang, Y Yang, NG Park
APL materials 7 (4), 2019
2352019
In-Situ Formed Type I Nanocrystalline Perovskite Film for Highly Efficient Light-Emitting Diode
JW Lee, YJ Choi, JM Yang, S Ham, SK Jeon, JY Lee, YH Song, EK Ji, ...
ACS nano 11 (3), 3311-3319, 2017
1692017
Perovskite-related (CH 3 NH 3) 3 Sb 2 Br 9 for forming-free memristor and low-energy-consuming neuromorphic computing
JM Yang, ES Choi, SY Kim, JH Kim, JH Park, NG Park
Nanoscale 11 (13), 6453-6461, 2019
1292019
Wafer-scale reliable switching memory based on 2-dimensional layered organic–inorganic halide perovskite
JY Seo, J Choi, HS Kim, J Kim, JM Yang, C Cuhadar, JS Han, SJ Kim, ...
Nanoscale 9 (40), 15278-15285, 2017
1272017
All-Inorganic Bismuth Halide Perovskite-Like Materials A3Bi2I9 and A3Bi1.8Na0.2I8.6 (A = Rb and Cs) for Low-Voltage Switching Resistive Memory
C Cuhadar, SG Kim, JM Yang, JY Seo, D Lee, NG Park
ACS applied materials & interfaces 10 (35), 29741-29749, 2018
982018
Layered (C6H5CH2NH3)2CuBr4 Perovskite for Multilevel Storage Resistive Switching Memory
SY Kim, JM Yang, ES Choi, NG Park
Advanced Functional Materials 30 (27), 2002653, 2020
902020
1D Hexagonal HC(NH2)2PbI3 for Multilevel Resistive Switching Nonvolatile Memory
JM Yang, SG Kim, JY Seo, C Cuhadar, DY Son, D Lee, NG Park
Advanced Electronic Materials 4 (9), 1800190, 2018
782018
Potassium ions as a kinetic controller in ionic double layers for hysteresis-free perovskite solar cells
SG Kim, C Li, A Guerrero, JM Yang, Y Zhong, J Bisquert, S Huettner, ...
Journal of materials chemistry A 7 (32), 18807-18815, 2019
612019
Vertically aligned two-dimensional halide perovskites for reliably operable artificial synapses
SJ Kim, TH Lee, JM Yang, JW Yang, YJ Lee, MJ Choi, SA Lee, JM Suh, ...
Materials Today 52, 19-30, 2022
502022
Effect of interlayer spacing in layered perovskites on resistive switching memory
SY Kim, JM Yang, ES Choi, NG Park
Nanoscale 11 (30), 14330-14338, 2019
422019
Roadmap on halide perovskite and related devices
DN Jeong, JM Yang, NG Park
Nanotechnology 31 (15), 152001, 2020
342020
Asymmetric Carrier Transport in Flexible Interface-type Memristor Enables Artificial Synapses with Sub-Femtojoule Energy Consumption
JM Yang, YK Jung, JH Lee, YC Kim, SY Kim, DA Park, JH Kim, SY Jeong, ...
Nanoscale Horizons, 2021
222021
A layered (n-C 4 H 9 NH 3) 2 CsAgBiBr 7 perovskite for bipolar resistive switching memory with a high ON/OFF ratio
SY Kim, JM Yang, SH Lee, NG Park
Nanoscale 13 (29), 12475-12483, 2021
212021
The effect of compositional engineering of imidazolium lead iodide on the resistive switching properties
ES Choi, JM Yang, SG Kim, C Cuhadar, SY Kim, SH Kim, D Lee, NG Park
Nanoscale 11 (30), 14455-14464, 2019
162019
Mixed‐Dimensional Formamidinium Bismuth Iodides Featuring In‐Situ Formed Type‐I Band Structure for Convolution Neural Networks
JM Yang, JH Lee, YK Jung, SY Kim, JH Kim, SG Kim, JH Kim, S Seo, ...
Advanced Science 9 (14), 2200168, 2022
102022
Intact metal/metal halide van der Waals junction enables reliable memristive switching with high endurance
JH Lee, JM Yang, SY Kim, S Baek, S Lee, SJ Lee, NG Park, JW Lee
Advanced Functional Materials 33 (14), 2214142, 2023
62023
Memristive Organic Bismuth Iodides for Neuromorphic Computing with High Performance
JM Yang, SY Kim, NG Park
Electrochemical Society Meeting Abstracts prime2020, 2049-2049, 2020
2020
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Articles 1–17