| A CMOS silicon spin qubit R Maurand, X Jehl, D Kotekar-Patil, A Corna, H Bohuslavskyi, R Laviéville, ... Nature communications 7 (1), 1-6, 2016 | 279 | 2016 |
| Planar Fully depleted SOI technology: A Powerful architecture for the 20nm node and beyond O Faynot, F Andrieu, O Weber, C Fenouillet-Béranger, P Perreau, ... 2010 International Electron Devices Meeting, 3.2. 1-3.2. 4, 2010 | 179 | 2010 |
| Scaling of trigate junctionless nanowire MOSFET with gate length down to 13 nm S Barraud, M Berthome, R Coquand, M Cassé, T Ernst, MP Samson, ... IEEE Electron Device Letters 33 (9), 1225-1227, 2012 | 175 | 2012 |
| Performance of omega-shaped-gate silicon nanowire MOSFET with diameter down to 8 nm S Barraud, R Coquand, M Casse, M Koyama, JM Hartmann, ... IEEE Electron Device Letters 33 (11), 1526-1528, 2012 | 116 | 2012 |
| Probing the limits of gate-based charge sensing MF Gonzalez-Zalba, S Barraud, AJ Ferguson, AC Betz Nature communications 6 (1), 1-8, 2015 | 112 | 2015 |
| Nanoscaled MOSFET Transistors on Strained Si, SiGe, Ge Layers: Some Integration and Electrical Properties Features TP Ernst, F Andrieu, O Weber, JM Hartmann, C Dupre, O Faynot, ... ECS Transactions 3 (7), 947, 2006 | 86 | 2006 |
| Few-electron edge-state quantum dots in a silicon nanowire field-effect transistor B Voisin, VH Nguyen, J Renard, X Jehl, S Barraud, F Triozon, M Vinet, ... Nano letters 14 (4), 2094-2098, 2014 | 82 | 2014 |
| Revisited parameter extraction methodology for electrical characterization of junctionless transistors DY Jeon, SJ Park, M Mouis, M Berthomé, S Barraud, GT Kim, G Ghibaudo Solid-State Electronics 90, 86-93, 2013 | 78 | 2013 |
| Strain-induced performance enhancement of trigate and omega-gate nanowire FETs scaled down to 10-nm width R Coquand, M Casse, S Barraud, D Cooper, V Maffini-Alvaro, ... IEEE transactions on electron devices 60 (2), 727-732, 2012 | 78 | 2012 |
| Effect of discrete impurities on electron transport in ultrashort MOSFET using 3D MC simulation P Dollfus, A Bournel, S Galdin, S Barraud, P Hesto IEEE Transactions on Electron Devices 51 (5), 749-756, 2004 | 77 | 2004 |
| Low-temperature electrical characterization of junctionless transistors DY Jeon, SJ Park, M Mouis, S Barraud, GT Kim, G Ghibaudo Solid-State Electronics 80, 135-141, 2013 | 70 | 2013 |
| Electrical Control of g-Factor in a Few-Hole Silicon Nanowire MOSFET B Voisin, R Maurand, S Barraud, M Vinet, X Jehl, M Sanquer, J Renard, ... Nano letters 16 (1), 88-92, 2016 | 68 | 2016 |
| Electrical Spin Driving by -Matrix Modulation in Spin-Orbit Qubits A Crippa, R Maurand, L Bourdet, D Kotekar-Patil, A Amisse, X Jehl, ... Physical review letters 120 (13), 137702, 2018 | 59 | 2018 |
| 3D analysis of advanced nano-devices using electron and atom probe tomography A Grenier, S Duguay, JP Barnes, R Serra, G Haberfehlner, D Cooper, ... Ultramicroscopy 136, 185-192, 2014 | 59 | 2014 |
| Vertically stacked-nanowires MOSFETs in a replacement metal gate process with inner spacer and SiGe source/drain S Barraud, V Lapras, MP Samson, L Gaben, L Grenouillet, ... 2016 IEEE International Electron Devices Meeting (IEDM), 17.6. 1-17.6. 4, 2016 | 58 | 2016 |
| The influence of Coulomb centers located in gate stacks on the effective electron mobility S Barraud, O Bonno, M Cassé Journal of Applied Physics 104 (7), 073725, 2008 | 58 | 2008 |
| Experimental and comparative investigation of low and high field transport in substrate-and process-induced strained nanoscaled MOSFETs F Andrieu, T Ernst, F Lime, F Rochette, K Romanjek, S Barraud, C Ravit, ... Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 176-177, 2005 | 57 | 2005 |
| Scaling of high-κ/metal-gate TriGate SOI nanowire transistors down to 10 nm width R Coquand, S Barraud, M Cassé, P Leroux, C Vizioz, C Comboroure, ... Solid-State Electronics 88, 32-36, 2013 | 56 | 2013 |
| A new backscattering model giving a description of the quasi-ballistic transport in nano-MOSFET E Fuchs, P Dollfus, G Le Carval, S Barraud, D Villanueva, F Salvetti, ... IEEE transactions on electron devices 52 (10), 2280-2289, 2005 | 56 | 2005 |
| Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot A Corna, L Bourdet, R Maurand, A Crippa, D Kotekar-Patil, ... npj quantum information 4 (1), 1-7, 2018 | 55 | 2018 |
