Mobility of oxygen vacancy in SrTiO3 and its implications for oxygen-migration-based resistance switching W Jiang, M Noman, YM Lu, JA Bain, PA Salvador, M Skowronski Journal of Applied Physics 110 (3), 2011 | 132 | 2011 |
Impact of Joule heating on the microstructure of nanoscale TiO2 resistive switching devices Y Meng Lu, M Noman, YN Picard, JA Bain, PA Salvador, M Skowronski Journal of Applied Physics 113 (16), 2013 | 49 | 2013 |
Elimination of high transient currents and electrode damage during electroformation of TiO2-based resistive switching devices YM Lu, M Noman, W Chen, PA Salvador, JA Bain, M Skowronski Journal of Physics D: Applied Physics 45 (39), 395101, 2012 | 35 | 2012 |
Transient characterization of the electroforming process in TiO2 based resistive switching devices M Noman, AA Sharma, Y Meng Lu, M Skowronski, PA Salvador, JA Bain Applied Physics Letters 102 (2), 2013 | 31 | 2013 |
Mechanism of localized electrical conduction at the onset of electroforming in TiO2 based resistive switching devices M Noman, AA Sharma, Y Meng Lu, R Kamaladasa, M Skowronski, ... Applied Physics Letters 104 (11), 2014 | 25 | 2014 |
Local heating-induced plastic deformation in resistive switching devices W Jiang, RJ Kamaladasa, YM Lu, A Vicari, R Berechman, PA Salvador, ... Journal of Applied Physics 110 (5), 2011 | 21 | 2011 |
Thermographic analysis of localized conductive channels in bipolar resistive switching devices YM Lu, W Jiang, M Noman, JA Bain, PA Salvador, M Skowronski Journal of Physics D: Applied Physics 44 (18), 185103, 2011 | 18 | 2011 |
Identification and characterization of localized conductivity changes in resistive switching devices Y Lu Carnegie Mellon University, 2012 | 1 | 2012 |
Dislocation Analysis in Metal-Oxide Materials and Devices by Electron Channeling Contrast Imaging R Kamaladasa, M Norman, Y Lu, JA Bain, PA Salvador, M Skowronski, ... Microscopy and Microanalysis 18 (S2), 706-707, 2012 | | 2012 |