Jörgen Olsson
Jörgen Olsson
Professor in electronics, Uppsala universitet
Verifierad e-postadress på angstrom.uu.se - Startsida
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Citeras av
Theoretical models for the action spectrum and the current-voltage characteristics of microporous semiconductor films in photoelectrochemical cells
S Soedergren, A Hagfeldt, J Olsson, SE Lindquist
The Journal of Physical Chemistry 98 (21), 5552-5556, 1994
On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices
J Westlinder, T Schram, L Pantisano, E Cartier, A Kerber, GS Lujan, ...
IEEE Electron Device Letters 24 (9), 550-552, 2003
Variable work function in MOS capacitors utilizing nitrogen-controlled TiNx gate electrodes
J Westlinder, G Sjöblom, J Olsson
Microelectronic Engineering 75 (4), 389-396, 2004
Optimizing Ga-profiles for highly efficient Cu (In, Ga) Se2 thin film solar cells in simple and complex defect models
C Frisk, C Platzer-Björkman, J Olsson, P Szaniawski, JT Wätjen, ...
Journal of Physics D: Applied Physics 47 (48), 485104, 2014
Electrical characterization of AlN MIS and MIM structures
F Engelmark, J Westlinder, GF Iriarte, IV Katardjiev, J Olsson
IEEE Transactions on Electron Devices 50 (5), 1214-1219, 2003
Anisotropic dry etching of boron doped single crystal CVD diamond
J Enlund, J Isberg, M Karlsson, F Nikolajeff, J Olsson, DJ Twitchen
Carbon 43 (9), 1839-1842, 2005
Combining strong interface recombination with bandgap narrowing and short diffusion length in Cu2ZnSnS4 device modeling
C Frisk, T Ericson, SY Li, P Szaniawski, J Olsson, C Platzer-Björkman
Solar Energy Materials and Solar Cells 144, 364-370, 2016
Deposition of HfO2 thin films in HfI4-based processes
K Forsgren, A Haårsta, J Aarik, A Aidla, J Westlinder, J Olsson
Journal of The Electrochemical Society 149 (10), F139, 2002
1 W/mm RF power density at 3.2 GHz for a dual-layer RESURF LDMOS transistor
J Olsson, N Rorsman, L Vestling, C Fager, J Ankarcrona, H Zirath, ...
IEEE Electron Device Letters 23 (4), 206-208, 2002
SB-MOSFETs in UTB-SOI featuring PtSi source/drain with dopant segregation
Z Zhang, Z Qiu, PE Hellstrom, G Malm, J Olsson, J Lu, M Ostling, ...
IEEE electron device letters 29 (1), 125-127, 2007
Simulation and dielectric characterization of reactive dc magnetron cosputtered thin films
J Westlinder, Y Zhang, F Engelmark, G Possnert, HO Blom, J Olsson, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002
Investigation of the thermal stability of reactively sputter-deposited TiN MOS gate electrodes
G Sjoblom, J Westlinder, J Olsson
IEEE transactions on electron devices 52 (10), 2349-2352, 2005
A novel strained Si0. 7Ge0. 3 surface-channel pMOSFET with an ALD TiN/Al2O3/HfAlOx/Al2O3 gate stack
D Wu, AC Lindgren, S Persson, G Sjöblom, M von Haartman, J Seger, ...
IEEE Electron Device Letters 24 (3), 171-173, 2003
Self-heating effects in SOI bipolar transistors
J Olsson
Microelectronic engineering 56 (3-4), 339-352, 2001
A self-aligned lateral bipolar transistor realized on SIMOX-material
B Edholm, J Olsson, A Soderbarg
IEEE Transactions on electron devices 40 (12), 2359-2360, 1993
Low-resistivity ZrNx metal gate in MOS devices
J Westlinder, J Malmström, G Sjöblom, J Olsson
Solid-state electronics 49 (8), 1410-1413, 2005
Drift region optimization of lateral RESURF devices
L Vestling, J Olsson, KH Eklund
Solid-State Electronics 46 (8), 1177-1184, 2002
Analysis and design of a low-voltage high-frequency LDMOS transistor
L Vestling, J Ankarcrona, J Olsson
IEEE Transactions on Electron Devices 49 (6), 976-980, 2002
Low-frequency noise and Coulomb scattering in Si0. 8Ge0. 2 surface channel pMOSFETs with ALD Al2O3 gate dielectrics
M von Haartman, J Westlinder, D Wu, BG Malm, PE Hellström, J Olsson, ...
Solid-state electronics 49 (6), 907-914, 2005
A novel high-frequency high-voltage LDMOS transistor using an extended gate RESURF technology
L Vestling, B Edholm, J Olsson, S Tiensuu, A Soderbarg
Proceedings of 9th International Symposium on Power Semiconductor Devices …, 1997
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