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Seung Hwan Lee
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Reservoir computing using dynamic memristors for temporal information processing
C Du, F Cai, MA Zidan, W Ma, SH Lee, WD Lu
Nature communications 8 (1), 2204, 2017
7062017
A fully integrated reprogrammable memristor–CMOS system for efficient multiply–accumulate operations
F Cai*, JM Correll*, SH Lee*(contributed equally), Y Lim, V Bothra, ...
Nature Electronics 2, 290–299, 2019
5782019
Temporal data classification and forecasting using a memristor-based reservoir computing system
J Moon, W Ma, JH Shin, F Cai, C Du, SH Lee, WD Lu
Nature Electronics 2, 480-487, 2019
3682019
Nanoscale resistive switching devices for memory and computing applications
SH Lee, X Zhu, WD Lu
Nano Research 13 (5), 1228–1243, 2020
1102020
Integration of 4F2 selector-less crossbar array 2Mb ReRAM based on transition metal oxides for high density memory applications
HD Lee, SG Kim, K Cho, H Hwang, H Choi, J Lee, SH Lee, HJ Lee, J Suh, ...
2012 Symposium on VLSI Technology (VLSIT), 151-152, 2012
752012
A deep neural network accelerator based on tiled RRAM architecture
Q Wang, X Wang, SH Lee, FH Meng, WD Lu
2019 IEEE international electron devices meeting (IEDM), 14.4. 1-14.4. 4, 2019
632019
Quantitative, Dynamic TaOx Memristor/Resistive Random Access Memory Model
SH Lee, J Moon, YJ Jeong, J Lee, X Li, H Wu, WD Lu
ACS Applied Electronic Materials 2 (3), 701-709, 2020
432020
Nanoionic Resistive‐Switching Devices
X Zhu, SH Lee, WD Lu
Advanced Electronic Materials 5 (9), 1900184, 2019
432019
Vertical atomic manipulation with dynamic atomic-force microscopy without tip change via a multi-step mechanism
J Bamidele, SH Lee, Y Kinoshita, R Turanský, Y Naitoh, YJ Li, ...
Nature communications 5 (1), 4476, 2014
362014
A Fully-Integrated Reprogrammable CMOS-RRAM Compute-In-Memory Coprocessor for Neuromorphic Applications
JM Correll, V Bothra, F Cai, Y Lim, SH Lee, S Lee, WD Lu, Z Zhang, ...
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 6 …, 2020
272020
Chemical tip fingerprinting in scanning probe microscopy of an oxidized Cu (110) surface
J Bamidele, Y Kinoshita, R Turanský, SH Lee, Y Naitoh, YJ Li, ...
Physical Review B 86 (15), 155422, 2012
262012
Memristors Based on (Zr, Hf, Nb, Ta, Mo, W) High‐Entropy Oxides
M Ahn, Y Park, SH Lee, S Chae, J Lee, JT Heron, E Kioupakis, WD Lu, ...
Advanced Electronic Materials 7 (5), 2001258, 2021
242021
Highly reliable and fast nonvolatile hybrid switching ReRAM memory using thin Al2O3demonstrated at 54nm memory array
J Yi, H Choi, S Lee, J Lee, D Son, S Lee, S Hwang, S Song, J Park, S Kim, ...
2011 Symposium on VLSI Technology-Digest of Technical Papers, 48-49, 2011
182011
Vertical double gate Z-RAM technology with remarkable low voltage operation for DRAM application
JS Kim, SW Chung, TS Jang, SH Lee, DH Son, SJ Chung, SM Hwang, ...
2010 Symposium on VLSI Technology, 163-164, 2010
152010
Variable resistance memory device and method for fabricating the same
YI Jae-Yun, SP Song, SH Lee
US Patent 8,933,427, 2015
142015
The effect of tunnel barrier at resistive switching device for low power memory applications
H Choi, J Yi, S Hwang, S Lee, S Song, S Lee, J Lee, D Son, J Park, ...
2011 3rd IEEE International Memory Workshop, IMW 2011, 5873243, 2011
142011
Electronic device including a semiconductor memory unit that includes cell mats of a plurality of planes vertically stacked
SH Lee, HJ Lee
US Patent US9613901B2, 2017
102017
Image formation and contrast inversion in noncontact atomic force microscopy imaging of oxidized Cu (110) surfaces
J Bamidele, Y Kinoshita, R Turanský, SH Lee, Y Naitoh, YJ Li, ...
Physical Review B 90 (3), 035410, 2014
102014
Offset buried metal gate vertical floating body memory technology with excellent retention time for DRAM application
SM Hwang, S Banna, C Tang, S Bhardwaj, M Gupta, T Thurgate, D Kim, ...
2011 Symposium on VLSI Technology-Digest of Technical Papers, 172-173, 2011
72011
Variable resistance memory device
SH Lee
US Patent 8,884,264, 2014
62014
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Articles 1–20