Philippe Christol
Philippe Christol
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Simple analytical method for calculating exciton binding energies in semiconductor quantum wells
H Mathieu, P Lefebvre, P Christol
Physical Review B 46 (7), 4092, 1992
MBE growth and characterization of type-II InAs/GaSb superlattices for mid-infrared detection
JB Rodriguez, P Christol, L Cerutti, F Chevrier, A Joullié
Journal of Crystal Growth 274 (1-2), 6-13, 2005
Unified formulation of excitonic absorption spectra of semiconductor quantum wells, superlattices, and quantum wires
P Lefebvre, P Christol, H Mathieu
Physical Review B 48 (23), 17308, 1993
GaSb-based mid-infrared 2–5 μm laser diodes
A Joullié, P Christol
Comptes Rendus Physique 4 (6), 621-637, 2003
Fractional‐dimensional calculation of exciton binding energies in semiconductor quantum wells and quantum‐well wires
P Christol, P Lefebvre, H Mathieu
Journal of applied physics 74 (9), 5626-5637, 1993
Thermalisation rate study of GaSb-based heterostructures by continuous wave photoluminescence and their potential as hot carrier solar cell absorbers
A Le Bris, L Lombez, S Laribi, G Boissier, P Christol, JF Guillemoles
Energy & Environmental Science 5 (3), 6225-6232, 2012
Wet etching and chemical polishing of InAs/GaSb superlattice photodiodes
R Chaghi, C Cervera, H Aït-Kaci, P Grech, JB Rodriguez, P Christol
Semiconductor Science and Technology 24 (6), 065010, 2009
Unambiguous determination of carrier concentration and mobility for InAs/GaSb superlattice photodiode optimization
C Cervera, JB Rodriguez, JP Perez, H Aït-Kaci, R Chaghi, L Konczewicz, ...
Journal of Applied Physics 106 (3), 033709, 2009
Excitons in semiconductor quantum wells: A straightforward analytical calculation
H Mathieu, P Lefebvre, P Christol
Journal of applied physics 72 (1), 300-302, 1992
Confined excitons in semiconductors: Correlation between binding energy and spectral absorption shape
P Lefebvre, P Christol, H Mathieu, S Glutsch
Physical Review B 52 (8), 5756, 1995
Interface analysis of InAs/GaSb superlattice grown by MBE
B Satpati, JB Rodriguez, A Trampert, E Tournié, A Joullié, P Christol
Journal of crystal growth 301, 889-892, 2007
Characterization of midwave infrared InAs/GaSb superlattice photodiode
C Cervera, JB Rodriguez, R Chaghi, H Aït-Kaci, P Christol
Journal of Applied Physics 106 (2), 024501, 2009
Excitons in semiconductor superlattices: Heuristic description of the transfer between Wannier-like and Frenkel-like regimes
P Lefebvre, P Christol, H Mathieu
Physical Review B 46 (20), 13603, 1992
Optical characterization of symmetric InAs/GaSb superlattices for detection in the 3–5 μm spectral region
JB Rodriguez, P Christol, F Chevrier, A Joullié
Physica E: Low-dimensional Systems and Nanostructures 28 (2), 128-133, 2005
A type-II superlattice period with a modified InAs to GaSb thickness ratio for midwavelength infrared photodiode performance improvement
JB Rodriguez, C Cervera, P Christol
Applied Physics Letters 97 (25), 251113, 2010
Dark current and noise measurements of an InAs/GaSb superlattice photodiode operating in the midwave infrared domain
C Cervera, I Ribet-Mohamed, R Taalat, JP Perez, P Christol, ...
Journal of electronic materials 41 (10), 2714-2718, 2012
Influence of the period thickness and composition on the electro-optical properties of type-II InAs/GaSb midwave infrared superlattice photodetectors
R Taalat, JB Rodriguez, M Delmas, P Christol
Journal of Physics D: Applied Physics 47 (1), 015101, 2013
Type-II InAsSb/InAs strained quantum-well laser diodes emitting at 3.5 μm
A Wilk, M El Gazouli, M El Skouri, P Christol, P Grech, AN Baranov, ...
Applied Physics Letters 77 (15), 2298-2300, 2000
Midwave infrared InSb nBn photodetector
A Evirgen, J Abautret, JP Perez, A Cordat, A Nedelcu, P Christol
Electronics Letters 50 (20), 1472-1473, 2014
Observation of long-lived oblique excitons in GaN-AlGaN multiple quantum wells
B Gil, P Lefebvre, J Allègre, H Mathieu, N Grandjean, M Leroux, J Massies, ...
Physical Review B 59 (15), 10246, 1999
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