| Subband dependent mobilities and carrier saturation mechanisms in thin Si doping layers in GaAs in the high density limit E Skuras, R Kumar, RL Williams, RA Strading, JE Dmochowski, ... Semiconductor science and technology 6 (6), 535, 1991 | 118 | 1991 |
| Observation and control of the amphoteric behaviour of Si-doped InSb grown on GaAs by MBE SD Parker, RL Williams, R Droopad, RA Stradling, KWJ Barnham, ... Semiconductor science and technology 4 (8), 663, 1989 | 95 | 1989 |
| Anisotropic piezoelectric effect in lateral surface superlattices E Skuras, AR Long, IA Larkin, JH Davies, MC Holland | 91 | 1997 |
| MBE growth and quantum transport measurements of spike-doped InSb and InAs RL Williams, E Skuras, RA Stradling, R Droopad, SN Holmes, SD Parker Semiconductor science and technology 5 (3S), S338, 1990 | 31 | 1990 |
| Anharmonic periodic modulation in lateral surface superlattices R Cuscó, MC Holland, JH Davies, IA Larkin, E Skuras, AR Long, ... Surface science 305 (1-3), 643-647, 1994 | 26 | 1994 |
| Importance of symmetry breaking in two-dimensional lateral-surface superlattices S Chowdhury, CJ Emeleus, B Milton, E Skuras, AR Long, JH Davies, ... Physical Review B 62 (8), R4821, 2000 | 20 | 2000 |
| 1.2 K Shubnikov–de Haas measurements and self‐consistent calculation of silicon spreading in δ‐ and slab‐doped In0.53Ga0.47As grown by molecular beam … M McElhinney, B Vögele, MC Holland, CR Stanley, E Skuras, AR Long, ... Applied physics letters 68 (7), 940-942, 1996 | 15 | 1996 |
| Potential modulation by strain in lateral surface superlattices AR Long, E Skuras, S Vallis, R Cusco, IA Larkin, JH Davies, MC Holland Physical Review B 60 (3), 1964, 1999 | 14 | 1999 |
| Harmonic oscillator with complex frequency A Jannussis, E Skuras Il Nuovo Cimento B (1971-1996) 94, 29-36, 1986 | 14 | 1986 |
| Si spreading in lattice-matched grown by molecular-beam epitaxy E Skuras, AR Long, B Vögele, MC Holland, CR Stanley, EA Johnson, ... Physical Review B 59 (16), 10712, 1999 | 11 | 1999 |
| Electron transport in shallow heterostructures with AlGaAs and AlAs barriers E Skuras, MC Holland, CJ Barton, JH Davies, AR Long Semiconductor science and technology 10 (7), 922, 1995 | 10 | 1995 |
| Inverse flux quantum periodicity in the amplitudes of commensurability oscillations in two-dimensional lateral surface superlattices S Chowdhury, AR Long, E Skuras, JH Davies, K Lister, G Pennelli, ... Physical Review B 69 (3), 035330, 2004 | 9 | 2004 |
| Two-dimensional arrays of magnetic nanostructures characterized using an underlying two-dimensional electron gas E Skuras, AR Long, S Chowdhury, M Rahman, KJ Kirk, JH Davies Journal of Applied Physics 90 (5), 2623-2625, 2001 | 9 | 2001 |
| Shubnikov–de Haas effect and persistent photoconductivity in E Skuras, CR Stanley, AR Long, EA Johnson, A MacKinnon, H Yaguchi, ... Journal of applied physics 86 (11), 6593-6595, 1999 | 9 | 1999 |
| Eigenfunctions and eigenvalues of the squeeze operatoi in quantum optics A Jannussis, E Skuras Il Nuovo Cimento B 95, 63-70, 1986 | 9 | 1986 |
| Potential modulation under lateral surface superlattices R Cuscó, E Skuras, S Vallis, MC Holland, AR Long, SP Beaumont, ... Superlattices and microstructures 16 (3), 283-286, 1994 | 8 | 1994 |
| Switching of guiding center-drift direction in asymmetric two-dimensional lateral surface superlattices S Chowdhury, E Skuras, CJ Emeleus, AR Long, JH Davies, G Pennelli, ... Physical Review B 63 (15), 153306, 2001 | 7 | 2001 |
| Optimization of layer structure for InGaAs channel pseudomorphic HEMTs JL Pearson, MC Holland, CR Stanley, AR Long, E Skuras, A Asenov, ... Journal of crystal growth 201, 757-760, 1999 | 7 | 1999 |
| High Magnetic Fields in Semiconductor Physics II R Droopad, SD Parker, E Skuras, RA Stradling, RL Williams, RB Beall, ... Springer Series in Solid State Physics 87, 1989 | 7 | 1989 |
| The effect of growth temperature, δ-doping and barrier composition on mobilities in shallow AlGaAs GaAs two-dimensional electron gases MC Holland, E Skuras, JH Davies, IA Larkin, AR Long, CR Stanley Journal of crystal growth 150, 1215-1219, 1995 | 6 | 1995 |
