Saumitra Mehrotra
Saumitra Mehrotra
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Engineering Nanowire n-MOSFETs at
SR Mehrotra, SG Kim, T Kubis, M Povolotskyi, MS Lundstrom, G Klimeck
IEEE transactions on electron devices 60 (7), 2171-2177, 2013
Design concepts of terahertz quantum cascade lasers: Proposal for terahertz laser efficiency improvements
T Kubis, SR Mehrotra, G Klimeck
Applied Physics Letters 97 (26), 261106, 2010
Design guidelines for sub-12 nm nanowire MOSFETs
M Salmani-Jelodar, SR Mehrotra, H Ilatikhameneh, G Klimeck
IEEE Transactions on Nanotechnology 14 (2), 210-213, 2015
Atomistic approach to alloy scattering in
SR Mehrotra, A Paul, G Klimeck
Applied Physics Letters 98 (17), 173503, 2011
Simulation Study of Thin-Body Ballistic n-MOSFETs Involving Transport in Mixed-L Valleys
SR Mehrotra, M Povolotskyi, DC Elias, T Kubis, JJM Law, MJW Rodwell, ...
IEEE electron device letters 34 (9), 1196-1198, 2013
Effect of diameter variation on electrical characteristics of Schottky barrier indium arsenide nanowire field-effect transistors
A Razavieh, PK Mohseni, K Jung, S Mehrotra, S Das, S Suslov, X Li, ...
ACS nano 8 (6), 6281-6287, 2014
Performance prediction of ultrascaled SiGe/Si core/shell electron and hole nanowire MOSFETs
A Paul, S Mehrotra, M Luisier, G Klimeck
IEEE electron device letters 31 (4), 278-280, 2010
On the validity of the top of the barrier quantum transport model for ballistic nanowire MOSFETs
A Paul, S Mehrotra, G Klimeck, M Luisier
2009 13th International Workshop on Computational Electronics, 1-4, 2009
A 90nm BiCMOS technology featuring 400GHz fMAX SiGe:C HBT
VP Trivedi, JP John, J Young, T Dao, D Morgan, R Ma, D Hammock, ...
2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 60-63, 2016
Utilizing the unique properties of nanowire MOSFETs for RF applications
A Razavieh, S Mehrotra, N Singh, G Klimeck, D Janes, J Appenzeller
Nano letters 13 (4), 1549-1554, 2013
Interface trap density metrology of state-of-the-art undoped Si n-FinFETs
GC Tettamanzi, A Paul, S Lee, SR Mehrotra, N Collaert, S Biesemans, ...
IEEE Electron Device Letters 32 (4), 440-442, 2011
Observation of 1D behavior in Si nanowires: Toward high-performance TFETs
RB Salazar, SR Mehrotra, G Klimeck, N Singh, J Appenzeller
Nano letters 12 (11), 5571-5575, 2012
A Simulation Study of Silicon Nanowire Field Effect Transistors (FETs)
SR Mehrotra
University of Cincinnati, 2007
Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs
A Paul, GC Tettamanzi, S Lee, SR Mehrotra, N Collaert, S Biesemans, ...
Journal of Applied Physics 110 (12), 124507, 2011
Tunneling: The major issue in ultra-scaled MOSFETs
MS Jelodar, H Ilatikhameneh, P Sarangapani, SR Mehrotra, G Klimeck, ...
2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO), 670-673, 2015
Field-effect transistor and method therefor
SR Mehrotra, L Radic, B Grote
US Patent 10,522,677, 2019
Atomistic simulation of phonon and alloy limited hole mobility in Si1–xGex nanowires
S Mehrotra, P Long, M Povolotskyi, G Klimeck
physica status solidi (RRL)–Rapid Research Letters 7 (10), 903-906, 2013
Performance enhancement of GaAs UTB pFETs by strain, orientation and body thickness engineering
A Paul, S Mehrotra, G Klimeck, M Rodwell
69th Device Research Conference, 233-234, 2011
Design of high-current L-valley GaAs=AlAs0.56Sb0.44/InP (111) ultra-thin-body nMOSFETs
S Mehrotra, M Povolotskyi, J Law, T Kubis, G Klimeck, M Rodwell
2012 International Conference on Indium Phosphide and Related Materials, 151-154, 2012
Process variation study for silicon nanowire transistors
SR Mehrotra, KP Roenker
2007 IEEE Workshop on Microelectronics and Electron Devices, 40-41, 2007
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