| Origin of Ferroelectric Phase in Undoped HfO2 Films Deposited by Sputtering T Mittmann, M Materano, PD Lomenzo, MH Park, I Stolichnov, M Cavalieri, ... Advanced Materials Interfaces 6 (11), 1900042, 2019 | 176 | 2019 |
| Nanowire tunnel FET with simultaneously reduced subthermionic subthreshold swing and off-current due to negative capacitance and voltage pinning effects A Saeidi, T Rosca, E Memisevic, I Stolichnov, M Cavalieri, LE Wernersson, ... Nano letters 20 (5), 3255-3262, 2020 | 66 | 2020 |
| WSe2/SnSe2 vdW heterojunction Tunnel FET with subthermionic characteristic and MOSFET co-integrated on same WSe2 flake N Oliva, J Backman, L Capua, M Cavalieri, M Luisier, AM Ionescu npj 2D Materials and Applications 4 (1), 5, 2020 | 64 | 2020 |
| Mechanical characterization and cleaning of CVD single-layer h-BN resonators SJ Cartamil-Bueno, M Cavalieri, R Wang, S Houri, S Hofmann, ... npj 2D Materials and Applications 1 (1), 16, 2017 | 58 | 2017 |
| Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in HfxZr(1–x)O2 Ultrathin Capacitors I Stolichnov, M Cavalieri, E Colla, T Schenk, T Mittmann, T Mikolajick, ... ACS applied materials & interfaces 10 (36), 30514-30521, 2018 | 46 | 2018 |
| Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures S Kamaei, A Saeidi, C Gastaldi, T Rosca, L Capua, M Cavalieri, ... npj 2D Materials and Applications 5 (1), 76, 2021 | 18 | 2021 |
| Experimental Investigation of Pulsed Laser Deposition of Ferroelectric Gd:HfO2 in a CMOS BEOL Compatible Process M Cavalieri, E O’Connor, C Gastaldi, I Stolichnov, AM Ionescu ACS Applied Electronic Materials 2 (6), 1752-1758, 2020 | 17 | 2020 |
| Radio-frequency characteristics of Ge-doped vanadium dioxide thin films with increased transition temperature A Muller, RA Khadar, T Abel, N Negm, T Rosca, A Krammer, M Cavalieri, ... ACS Applied Electronic Materials 2 (5), 1263-1272, 2020 | 16 | 2020 |
| Intrinsic switching in Si-doped HfO2: A study of Curie–Weiss law and its implications for negative capacitance field-effect transistor C Gastaldi, M Cavalieri, A Saeidi, E O'Connor, S Kamaei, T Rosca, ... Applied Physics Letters 118 (19), 2021 | 14 | 2021 |
| Tunable rf phase shifters based on vanadium dioxide metal insulator transition EA Casu, N Oliva, M Cavalieri, AA Müller, A Fumarola, WA Vitale, ... IEEE Journal of the Electron Devices Society 6, 965-971, 2018 | 14 | 2018 |
| Intrinsic or nucleation-driven switching: An insight from nanoscopic analysis of negative capacitance Hf1− xZrxO2-based structures I Stolichnov, M Cavalieri, C Gastaldi, M Hoffmann, U Schroeder, ... Applied Physics Letters 117 (17), 2020 | 12 | 2020 |
| An Experimental Study on Mixed-Dimensional 1D-2D van der Waals Single-Walled Carbon Nanotube-WSe2 Hetero-Junction S Kamaei, A Saeidi, F Jazaeri, A Rassekh, N Oliva, M Cavalieri, ... IEEE Electron Device Letters 41 (4), 645-648, 2020 | 12 | 2020 |
| Transient Negative Capacitance of Silicon-doped HfO2 in MFMIS and MFIS structures: experimental insights for hysteresis-free steep slope NC FETs C Gastaldi, A Saeidi, M Cavalieri, I Stolichnov, P Muralt, AM Ionescu 2019 IEEE International Electron Devices Meeting (IEDM), 23.5. 1-23.5. 4, 2019 | 12 | 2019 |
| A reconfigurable inductor based on vanadium dioxide insulator-to-metal transition EA Casu, AA Muller, M Cavalieri, A Fumarola, AM Ionescu, ... IEEE Microwave and Wireless Components Letters 28 (9), 795-797, 2018 | 12 | 2018 |
| Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures. npj 2D Mater S Kamaei, A Saeidi, C Gastaldi, T Rosca, L Capua, M Cavalieri, ... Appl 5, 1-10, 2021 | 9 | 2021 |
| Co-integrated Subthermionic 2D/2D WSe2/SnSe2 Vertical Tunnel FET and WSe2 MOSFET on same flake: towards a 2D/2D vdW Dual-Transport Steep Slope FET N Oliva, L Capua, M Cavalieri, AM Ionescu 2019 IEEE International Electron Devices Meeting (IEDM), 37.2. 1-37.2. 4, 2019 | 9 | 2019 |
| Negative Capacitance in HfO2 Gate Stack Structures With and Without Metal Interlayer C Gastaldi, M Cavalieri, A Saeidi, E O’Connor, F Bellando, I Stolichnov, ... IEEE Transactions on Electron Devices 69 (5), 2680-2685, 2022 | 8 | 2022 |
| 3D Smith charts scattering parameters frequency-dependent orientation analysis and complex-scalar multi-parameter characterization applied to Peano reconfigurable vanadium … AA Muller, A Moldoveanu, V Asavei, RA Khadar, E Sanabria-Codesal, ... Scientific reports 9 (1), 18346, 2019 | 6 | 2019 |
| Double gate n-type WSe2 FETs with high-k top gate dielectric and enhanced electrostatic control N Oliva, EA Casu, M Cavalieri, AM Ionescu 2018 48th European Solid-State Device Research Conference (ESSDERC), 114-117, 2018 | 6 | 2018 |
| Hysteresis Dynamics in Double-Gated n-Type WSe2 FETs With High-k Top Gate Dielectric N Oliva, YY Illarionov, EA Casu, M Cavalieri, T Knobloch, T Grasser, ... IEEE Journal of the Electron Devices Society 7, 1163-1169, 2019 | 4 | 2019 |
