CARLOS SAMPEDRO MATARIN
CARLOS SAMPEDRO MATARIN
Tenured Professor, Universidad de Granada, Spain
Verified email at go.ugr.es
TitleCited byYear
A comprehensive study of the corner effects in Pi-gate MOSFETs including quantum effects
FJG Ruiz, A Godoy, F Gamiz, C Sampedro, L Donetti
IEEE Transactions on Electron Devices 54 (12), 3369-3377, 2007
882007
Multi-subband Monte Carlo study of device orientation effects in ultra-short channel DGSOI
C Sampedro, F Gámiz, A Godoy, R Valin, A Garcia-Loureiro, FG Ruiz
Solid-State Electronics 54 (2), 131-136, 2010
492010
Influence of acoustic phonon confinement on electron mobility in ultrathin silicon on insulator layers
L Donetti, F Gámiz, N Rodriguez, F Jimenez, C Sampedro
Applied physics letters 88 (12), 122108, 2006
452006
An Analytical Model for Surrounding-Gate Transistors That Includes Quantum and Velocity Overshoot Effects
JB Roldán, F Gamiz, F Jiménez-Molinos, C Sampedro, A Godoy, ...
IEEE Transactions on Electron Devices 57 (11), 2925-2933, 2010
302010
The multivalley effective conduction band-edge method for Monte Carlo simulation of nanoscale structures
C Sampedro-Matarín, F Gámiz, A Godoy, FJG Ruiz
IEEE Transactions on Electron Devices 53 (11), 2703-2710, 2006
292006
Quantum-mechanical effects in multiple-gate MOSFETs
A Godoy, A Ruiz-Gallardo, C Sampedro, F Gámiz
Journal of Computational Electronics 6 (1-3), 145-148, 2007
282007
Reaching sub-32nm nodes: ET-FDSOI and BOX optimization
C Sampedro, F Gámiz, L Donetti, A Godoy
Solid-State Electronics 70, 101-105, 2012
242012
Multi-subband ensemble Monte Carlo simulation of bulk MOSFETs for the 32nm-node and beyond
C Sampedro, F Gámiz, A Godoy, R Valín, A García-Loureiro, N Rodríguez, ...
Solid-State Electronics 65, 88-93, 2011
222011
On the extension of ET-FDSOI roadmap for 22 nm node and beyond
C Sampedro, F Gámiz, A Godoy
Solid-state electronics 90, 23-27, 2013
212013
Calculation of the phonon-limited mobility in silicon Gate All-Around MOSFETs
A Godoy, F Ruiz, C Sampedro, F Gámiz, U Ravaioli
Solid-State Electronics 51 (9), 1211-1215, 2007
212007
-FET as Capacitor-Less eDRAM Cell For High-Density Integration
C Navarro, M Duan, MS Parihar, F Adamu-Lema, S Coseman, J Lacord, ...
IEEE Transactions on Electron Devices 64 (12), 4904-4909, 2017
192017
Compact drain-current model for reproducing advanced transport models in nanoscale double-gate MOSFETs
M Cheralathan, C Sampedro, JB Roldán, F Gámiz, G Iannaccone, ...
Semiconductor science and technology 26 (9), 095015, 2011
122011
Two-dimensional Monte Carlo simulation of DGSOI MOSFET misalignment
R Valin, C Sampedro, M Aldegunde, A Garcia-Loureiro, N Seoane, ...
IEEE Transactions on Electron Devices 59 (6), 1621-1628, 2012
112012
Confinement orientation effects in S/D tunneling
C Medina-Bailon, C Sampedro, F Gámiz, A Godoy, L Donetti
Solid-State Electronics 128, 48-53, 2017
102017
Modeling the channel charge and potential in quasi-ballistic nanoscale double-gate MOSFETs
A Mangla, JM Sallese, C Sampedro, F Gamiz, C Enz
IEEE Transactions on Electron Devices 61 (8), 2640-2646, 2014
102014
A parallel deterministic solver for the Schrödinger–Poisson–Boltzmann system in ultra-short DG-MOSFETs: Comparison with Monte-Carlo
F Vecil, JM Mantas, MJ Cáceres, C Sampedro, A Godoy, F Gámiz
Computers & Mathematics with Applications 67 (9), 1703-1721, 2014
102014
3d multi-subband ensemble Monte Carlo simulator of FinFETs and nanowire transistors
C Sampedro, L Donetti, F Gamiz, A Godoy, FJ Garcia-Ruiz, VP Georgiev, ...
2014 International Conference on Simulation of Semiconductor Processes and …, 2014
82014
Quantum Ensemble Monte Carlo simulation of silicon-based nanodevices
C Sampedro, F Gámiz, A Godoy, F Jiménez-Molinos
Journal of computational electronics 6 (1-3), 41-44, 2007
72007
Impact of S/D tunneling in ultrascaled devices, a Multi-Subband Ensemble Monte Carlo study
C Medina-Bailon, C Sampedro, F Gamiz, A Godoy, L Donetti
2015 International Conference on Simulation of Semiconductor Processes and …, 2015
62015
Simulation of the electrostatic and transport properties of 3D-stacked GAA silicon nanowire FETs
FG Ruiz, IM Tienda-Luna, A Godoy, C Sampedro, F Gámiz, L Donetti
Solid-State Electronics 59 (1), 62-67, 2011
62011
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