|Reliability wearout mechanisms in advanced CMOS technologies|
AW Strong, EY Wu, RP Vollertsen, J Sune, G La Rosa, TD Sullivan, ...
John Wiley & Sons, 2009
|Power-law voltage acceleration: A key element for ultra-thin gate oxide reliability|
EY Wu, J Suné
Microelectronics reliability 45 (12), 1809-1834, 2005
|Recommended methods to study resistive switching devices|
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
|Ultra-thin oxide reliability for ULSI applications|
EY Wu, JH Stathis, LK Han
Semiconductor Science and Technology 15 (5), 425, 2000
|Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin gate oxides|
E Wu, J Sune, W Lai, E Nowak, J McKenna, A Vayshenker, D Harmon
Solid-State Electronics 46 (11), 1787-1798, 2002
|On the Weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination. Part I: theory, methodology, experimental techniques|
EY Wu, RP Vollertsen
IEEE Transactions on Electron Devices 49 (12), 2131-2140, 2002
|Voltage-dependent voltage-acceleration of oxide breakdown for ultra-thin oxides|
EY Wu, J Aitken, E Nowak, A Vayshenker, P Varekamp, G Hueckel, ...
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000
|Experimental evidence of T/sub BD/power-law for voltage dependence of oxide breakdown in ultrathin gate oxides|
EY Wu, A Vayshenker, E Nowak, J Sune, RP Vollertsen, W Lai, D Harmon
IEEE Transactions on Electron Devices 49 (12), 2244-2253, 2002
|A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications|
S Krishnan, U Kwon, N Moumen, MW Stoker, ECT Harley, S Bedell, ...
2011 International Electron Devices Meeting, 28.1. 1-28.1. 4, 2011
|Challenges for accurate reliability projections in the ultra-thin oxide regime|
EY Wu, WW Abadeer, LK Han, SH Lo, GR Hueckel
1999 IEEE International Reliability Physics Symposium Proceedings. 37th …, 1999
|CMOS scaling beyond the 100-nm node with silicon-dioxide-based gate dielectrics|
EY Wu, EJ Nowak, A Vayshenker, WL Lai, DL Harmon
IBM Journal of Research and Development 46 (2.3), 287-298, 2002
|Structural dependence of dielectric breakdown in ultra-thin gate oxides and its relationship to soft breakdown modes and device failure|
E Wu, E Nowak, J Aitken, W Abadeer, LK Han, S Lo
International Electron Devices Meeting 1998. Technical Digest (Cat. No …, 1998
|On the Weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination. Part II: experimental results and the effects of stress …|
EY Wu, J Sune, W Lai
IEEE Transactions on Electron Devices 49 (12), 2141-2150, 2002
|Gate oxide breakdown under current limited constant voltage stress|
BP Linder, JH Stathis, RA Wachnik, E Wu, SA Cohen, A Ray, ...
2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No …, 2000
|Hydrogen-Release Mechanisms in the Breakdown of Thin S i O 2 Films|
J Suñé, EY Wu
Physical review letters 92 (8), 087601, 2004
|Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown|
Y Ji, C Pan, M Zhang, S Long, X Lian, F Miao, F Hui, Y Shi, L Larcher, ...
Applied Physics Letters 108 (1), 012905, 2016
|Statistics of successive breakdown events in gate oxides|
J Sune, EY Wu
IEEE Electron Device Letters 24 (4), 272-274, 2003
|A high performance 90nm SOI technology with 0.992 /spl mu/m2 6T-SRAM cell|
M Khare, SH Ku, RA Donaton, S Greco, C Brodsky, X Chen, A Chou, ...
Digest. International Electron Devices Meeting,, 407-410, 2002
|Weibull breakdown characteristics and oxide thickness uniformity|
EY Wu, EJ Nowak, RP Vollertsen, LK Han
IEEE Transactions on Electron Devices 47 (12), 2301-2309, 2000
|High performance 32nm SOI CMOS with high-k/metal gate and 0.149µm2SRAM and ultra low-k back end with eleven levels of copper|
B Greene, Q Liang, K Amarnath, Y Wang, J Schaeffer, M Cai, Y Liang, ...
2009 Symposium on VLSI Technology, 140-141, 2009