Ernest Wu
Ernest Wu
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Reliability wearout mechanisms in advanced CMOS technologies
AW Strong, EY Wu, RP Vollertsen, J Sune, G La Rosa, TD Sullivan, ...
John Wiley & Sons, 2009
Power-law voltage acceleration: A key element for ultra-thin gate oxide reliability
EY Wu, J Suné
Microelectronics reliability 45 (12), 1809-1834, 2005
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
Ultra-thin oxide reliability for ULSI applications
EY Wu, JH Stathis, LK Han
Semiconductor Science and Technology 15 (5), 425, 2000
Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin gate oxides
E Wu, J Sune, W Lai, E Nowak, J McKenna, A Vayshenker, D Harmon
Solid-State Electronics 46 (11), 1787-1798, 2002
On the Weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination. Part I: theory, methodology, experimental techniques
EY Wu, RP Vollertsen
IEEE Transactions on Electron Devices 49 (12), 2131-2140, 2002
Voltage-dependent voltage-acceleration of oxide breakdown for ultra-thin oxides
EY Wu, J Aitken, E Nowak, A Vayshenker, P Varekamp, G Hueckel, ...
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000
Experimental evidence of T/sub BD/power-law for voltage dependence of oxide breakdown in ultrathin gate oxides
EY Wu, A Vayshenker, E Nowak, J Sune, RP Vollertsen, W Lai, D Harmon
IEEE Transactions on Electron Devices 49 (12), 2244-2253, 2002
A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications
S Krishnan, U Kwon, N Moumen, MW Stoker, ECT Harley, S Bedell, ...
2011 International Electron Devices Meeting, 28.1. 1-28.1. 4, 2011
Challenges for accurate reliability projections in the ultra-thin oxide regime
EY Wu, WW Abadeer, LK Han, SH Lo, GR Hueckel
1999 IEEE International Reliability Physics Symposium Proceedings. 37th …, 1999
CMOS scaling beyond the 100-nm node with silicon-dioxide-based gate dielectrics
EY Wu, EJ Nowak, A Vayshenker, WL Lai, DL Harmon
IBM Journal of Research and Development 46 (2.3), 287-298, 2002
Structural dependence of dielectric breakdown in ultra-thin gate oxides and its relationship to soft breakdown modes and device failure
E Wu, E Nowak, J Aitken, W Abadeer, LK Han, S Lo
International Electron Devices Meeting 1998. Technical Digest (Cat. No …, 1998
On the Weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination. Part II: experimental results and the effects of stress …
EY Wu, J Sune, W Lai
IEEE Transactions on Electron Devices 49 (12), 2141-2150, 2002
Gate oxide breakdown under current limited constant voltage stress
BP Linder, JH Stathis, RA Wachnik, E Wu, SA Cohen, A Ray, ...
2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No …, 2000
Hydrogen-Release Mechanisms in the Breakdown of Thin S i O 2 Films
J Suñé, EY Wu
Physical review letters 92 (8), 087601, 2004
Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown
Y Ji, C Pan, M Zhang, S Long, X Lian, F Miao, F Hui, Y Shi, L Larcher, ...
Applied Physics Letters 108 (1), 012905, 2016
Statistics of successive breakdown events in gate oxides
J Sune, EY Wu
IEEE Electron Device Letters 24 (4), 272-274, 2003
A high performance 90nm SOI technology with 0.992 /spl mu/m2 6T-SRAM cell
M Khare, SH Ku, RA Donaton, S Greco, C Brodsky, X Chen, A Chou, ...
Digest. International Electron Devices Meeting,, 407-410, 2002
Weibull breakdown characteristics and oxide thickness uniformity
EY Wu, EJ Nowak, RP Vollertsen, LK Han
IEEE Transactions on Electron Devices 47 (12), 2301-2309, 2000
High performance 32nm SOI CMOS with high-k/metal gate and 0.149µm2SRAM and ultra low-k back end with eleven levels of copper
B Greene, Q Liang, K Amarnath, Y Wang, J Schaeffer, M Cai, Y Liang, ...
2009 Symposium on VLSI Technology, 140-141, 2009
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