Ananth Saran Yalamarthy
Ananth Saran Yalamarthy
PhD, Stanford (ME)
Verified email at - Homepage
TitleCited byYear
Suppression of Persistent Photoconductivity in AlGaN/GaN Ultraviolet Photodetectors UsingIn SituHeating
M Hou, H So, AJ Suria, AS Yalamarthy, DG Senesky
IEEE Electron Device Letters 38 (1), 56-59, 2016
Strain-and temperature-induced effects in AlGaN/GaN high electron mobility transistors
AS Yalamarthy, DG Senesky
Semiconductor Science and Technology 31 (3), 035024, 2016
DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600 C in air
AJ Suria, AS Yalamarthy, H So, DG Senesky
Semiconductor Science and Technology 31 (11), 115017, 2016
Effects of air annealing on DC characteristics of InAlN/GaN MOS high-electron-mobility transistors using atomic-layer-deposited Al2O3
S Ozaki, K Makiyama, T Ohki, N Okamoto, S Kaneki, K Nishiguchi, N Hara, ...
Applied Physics Express 10 (6), 061001, 2017
High Responsivity, Low Dark Current Ultraviolet Photodetectors Based on Two-Dimensional Electron Gas Interdigitated Transducers
PF Satterthwaite, AS Yalamarthy, NA Scandrette, AKM Newaz, ...
ACS Photonics 5 (11), 4277-4282, 2018
A Nano-satellite Mission to Study Charged Particle Precipitation from the Van Allen Radiation Belts caused due to Seismo-Electromagnetic Emissions
N Sivadas, A Gulati, D Kannapan, AS Yalamarthy, A Dhiman, A Bhagoji, ...
arXiv preprint arXiv:1411.6034, 2014
Tuning Electrical and Thermal Transport in AlGaN/GaN Heterostructures via Buffer Layer Engineering
AS Yalamarthy, H So, M Muñoz Rojo, AJ Suria, X Xu, E Pop, DG Senesky
Advanced Functional Materials 28 (22), 1705823, 2018
The effect of bias conditions on AlGaN/GaN 2DEG Hall plates
KM Dowling, HS Alpert, P Zhang, AN Ramirez, AS Yalamathy, H Köck, ...
Proc. Solid-State Sens. Actuators Microsyst. Workshop, 194-197, 2018
Thickness engineering of atomic layer deposited Al2O3 films to suppress interfacial reaction and diffusion of Ni/Au gate metal in AlGaN/GaN HEMTs up to 600 °C …
AJ Suria, AS Yalamarthy, TA Heuser, A Bruefach, CA Chapin, H So, ...
Applied Physics Letters 110 (25), 253505, 2017
Effect of geometry on sensitivity and offset of AlGaN/GaN and InAlN/GaN Hall-effect sensors
HS Alpert, KM Dowling, CA Chapin, AS Yalamarthy, SR Benbrook, ...
IEEE Sensors Journal 19 (10), 3640-3646, 2019
2DEG-Heated AlGaN/GaN Micro-Hotplates for High-Temperature Chemical Sensing Microsystems
M Hou, AJ Suria, AS Yalamarthy, H So, DG Senesky
Solid-State Sensors, Actuators and Microsystems Workshop, 356-359, 2016
High responsivity, low dark current ultraviolet photodetector based on AlGaN/GaN interdigitated transducer
PF Satterthwaite, AS Yalamarthy, NA Scandrette, AKM Newaz, ...
arXiv preprint arXiv:1808.05723, 2018
Gallium Nitride Microelectronics for High-Temperature Environments
DG Senesky, H So, AJ Suria, AS Yalamarthy, SR Jain, CA Chapin, ...
Semiconductor-Based Sensors, 395-433, 2016
Stable Operation of AlGaN/GaN HEMTs for 25 h at 400° C in air
S Kargarrazi, AS Yalamarthy, PF Satterthwaite, SW Blankenberg, ...
IEEE Journal of the Electron Devices Society 7, 931-935, 2019
Significant Phonon Drag Enables High Power Factor in the AlGaN/GaN Two-Dimensional Electron Gas
AS Yalamarthy, M Muñoz Rojo, A Bruefach, D Boone, KM Dowling, ...
Nano letters, 2019
Process-Induced Anomalous Current Transport in Graphene/InA1N/GaN Heterostructured Diodes
PF Satterthwaite, AS Yalamarthy, S Vaziri, MM Rojo, E Pop, DG Senesky
2019 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2019
Gallium Nitride Photodetector Measurements of UV Emission from a Gaseous CH4/O2 Hybrid Rocket Igniter Plume
HS Alpert, AS Yalamarthy, PF Satterthwaite, E Jens, J Rabinovitch, ...
2019 IEEE Aerospace Conference, 1-8, 2019
Stable Operation of AlGaN/GaN HEMTs at 400C in air for 25 hours
S Kargarrazi, AS Yalamarthy, PF Satterthwaite, SW Blankenberg, ...
arXiv preprint arXiv:1903.00572, 2019
Micro-Tesla Offset in Thermally Stable AlGaN/GaN 2DEG Hall Plates Using Current Spinning
KM Dowling, HS Alpert, AS Yalamarthy, PF Satterthwaite, S Kumar, ...
IEEE Sensors Letters 3 (3), 1-4, 2019
Polarization Field Enhanced Transport in Gallium Nitride Heterostructures for Energy Harvesting and Sensing
AS Yalamarthy
Stanford University, 2019
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