Carl-Mikael Zetterling
Title
Cited by
Cited by
Year
Process technology for silicon carbide devices
CM Zetterling
IET, 2002
2262002
SiC power devices—Present status, applications and future perspective
M Östling, R Ghandi, CM Zetterling
2011 IEEE 23rd International Symposium on Power Semiconductor Devices and …, 2011
1502011
Inductively coupled plasma etching of bulk 6H-SiC and thin-film SiCN in chemistries
JJ Wang, ES Lambers, SJ Pearton, M Ostling, CM Zetterling, JM Grow, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 16 (4 …, 1998
1391998
500Bipolar Integrated OR/NOR Gate in 4H-SiC
L Lanni, BG Malm, M Östling, CM Zetterling
IEEE Electron Device Letters 34 (9), 1091-1093, 2013
892013
Investigation of aluminum nitride grown by metal–organic chemical-vapor deposition on silicon carbide
CM Zetterling, M Östling, K Wongchotigul, MG Spencer, X Tang, CI Harris, ...
Journal of applied physics 82 (6), 2990-2995, 1997
851997
Surface-passivation effects on the performance of 4H-SiC BJTs
R Ghandi, B Buono, M Domeij, R Esteve, A Schoner, J Han, S Dimitrijev, ...
IEEE Transactions on Electron Devices 58 (1), 259-265, 2010
742010
Reduction of the Schottky barrier height on silicon carbide using Au nano-particles
SK Lee, CM Zetterling, M Östling, I Åberg, MH Magnusson, K Deppert, ...
Solid-State Electronics 46 (9), 1433-1440, 2002
742002
Ultradeep, low-damage dry etching of SiC
H Cho, P Leerungnawarat, DC Hays, SJ Pearton, SNG Chu, RM Strong, ...
Applied Physics Letters 76 (6), 739-741, 2000
742000
Ohmic contact properties of magnetron sputtered on - and -type 4H-silicon carbide
K Buchholt, R Ghandi, M Domeij, CM Zetterling, J Lu, P Eklund, L Hultman, ...
Applied physics letters 98 (4), 042108, 2011
702011
1200-V 5.2-4H-SiC BJTs With a High Common-Emitter Current Gain
HS Lee, M Domeij, CM Zetterling, M Ostling, F Allerstam, ...
IEEE Electron Device Letters 28 (11), 1007-1009, 2007
692007
Geometrical effects in high current gain 1100-V 4H-SiC BJTs
M Domeij, HS Lee, E Danielsson, CM Zetterling, M Ostling, A Schoner
IEEE electron device letters 26 (10), 743-745, 2005
692005
Low resistivity ohmic titanium carbide contacts to n-and p-type 4H-silicon carbide
SK Lee, CM Zetterling, M Östling, JP Palmquist, H Högberg, U Jansson
Solid-State Electronics 44 (7), 1179-1186, 2000
692000
Modeling and characterization of current gain versus temperature in 4H-SiC power BJTs
B Buono, R Ghandi, M Domeij, BG Malm, CM Zetterling, M Ostling
IEEE Transactions on Electron Devices 57 (3), 704-711, 2010
672010
A monolithic, 500 C operational amplifier in 4H-SiC bipolar technology
R Hedayati, L Lanni, S Rodriguez, BG Malm, A Rusu, CM Zetterling
IEEE Electron Device Letters 35 (7), 693-695, 2014
602014
High-voltage 4H-SiC PiN diodes with etched junction termination extension
R Ghandi, B Buono, M Domeij, G Malm, CM Zetterling, M Ostling
IEEE Electron Device Letters 30 (11), 1170-1172, 2009
602009
Via-hole etching for SiC
P Leerungnawarat, DC Hays, H Cho, SJ Pearton, RM Strong, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1999
591999
ICP etching of SiC
JJ Wang, ES Lambers, SJ Pearton, M Ostling, CM Zetterling, JM Grow, ...
Solid-State Electronics 42 (12), 2283-2288, 1998
581998
Schottky diode formation and characterization of titanium tungsten to n- and p-type 4H silicon carbide
SK Lee, CM Zetterling, M Östling
Journal of Applied Physics 87 (11), 8039-8044, 2000
562000
Electrical characterization of TiC ohmic contacts to aluminum ion implanted 4H–silicon carbide
SK Lee, CM Zetterling, E Danielsson, M Östling, JP Palmquist, H Högberg, ...
Applied Physics Letters 77 (10), 1478-1480, 2000
552000
A 2.8 kV, forward drop JBS diode with low leakage
F Dahlquist, JO Svedberg, CM Zetterling, M Ostling, B Breitholtz, ...
Materials Science Forum 338, 1179-1182, 2000
552000
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