| Impact of gate-induced drain leakage on retention time distribution of 256 Mbit DRAM with negative wordline bias M Chang, J Lin, SN Shih, TC Wu, B Huang, J Yang, PI Lee IEEE Transactions on Electron Devices 50 (4), 1036-1041, 2003 | 59 | 2003 |
| Si-H bond breaking induced retention degradation during packaging process of 256 Mbit DRAMs with negative wordline bias M Chang, J Lin, CS Lai, RD Chang, SN Shih, MY Wang, PI Lee IEEE transactions on electron devices 52 (4), 484-491, 2005 | 27 | 2005 |
| Machine housing P Steuer, D Schneider US Patent 6,710,485, 2004 | 9 | 2004 |
| Deep fence isolation for logic cells MC Chang, N Chan, EJ Smith US Patent 10,593,674, 2020 | 3 | 2020 |
| Novel back gate doping ultra low retention power 22nm FDSOL SRAM for IoT application M Chang, N Chan, V Joshi, S Hecker, U Ziller, P Poth, A Zaka, ... 2018 48th European Solid-State Device Research Conference (ESSDERC), 78-81, 2018 | 3 | 2018 |
| Laterally diffused field effect transistor in soi configuration R Yan, MC Chang, T Merbeth US Patent App. 15/622,591, 2018 | 2 | 2018 |
| Method of forming a capacitor structure and capacitor structure R Yan, MC Chang, R Richter US Patent 9,941,348, 2018 | 2 | 2018 |
| Dual-depth STI cavity extension and method of production thereof EJ Smith, N Chan, MC Chang US Patent 10,559,490, 2020 | 1 | 2020 |
| Metal Routing Induced Burnout in GGNMOS ESD Protection for Low-Power DRAM Application M Chang 36th EOS/ESD symposium, 2014 | 1 | 2014 |
| 22FDXⓇ EDMOS for 5G mmW Power Amplifier Applications M Chang, Z Al-Husseini, S Syed, SN Ong, LHK Chan, W Arfaoui, D Lipp, ... 2023 18th European Microwave Integrated Circuits Conference (EuMIC), 301-304, 2023 | | 2023 |
| 22FDX® Device Optimization for mmW PA M Chang, Z Al-Husseini, S Syed, W Arfaoui, T Chen, A Knorr ESSDERC 2023-IEEE 53rd European Solid-State Device Research Conference …, 2023 | | 2023 |
| Enabling medium thick gate oxide devices in 22FDX® technology for switch and high-performance amplifier application T Herrmann, A Zaka, Z Zhao, B Syamal, W Arfaoui, R Jain, MC Chang, ... Solid-State Electronics 199, 108512, 2023 | | 2023 |
| Extended-drain field-effect transistors including a floating gate MC Chang, N Chan US Patent 11,127,860, 2021 | | 2021 |
| FinFET SRAM layout and method of making the same MC Chang, N Chan, R van Bentum US Patent 10,504,906, 2019 | | 2019 |
| Semiconductor device including fdsoi transistors with compact ground connection via back gate N Chan, EJ Smith, MC Chang US Patent App. 15/948,016, 2019 | | 2019 |
| FinFET device with enlarged channel regions MC Chang, R Yan, B Bai US Patent 9,748,236, 2017 | | 2017 |
| Packaging process induced retention degradation of 256 Mbit DRAM with negative wordline bias M Chang, J Lin, RD Chang, SN Shih, CS Lai, PI Lee Proceedings of the 11th International Symposium on the Physical and Failure …, 2004 | | 2004 |
