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rahim faez
rahim faez
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Title
Cited by
Cited by
Year
Engineering enhanced thermoelectric properties in zigzag graphene nanoribbons
H Karamitaheri, N Neophytou, M Pourfath, R Faez, H Kosina
Journal of Applied Physics 111 (5), 2012
1132012
Stability analysis in graphene nanoribbon interconnects
SH Nasiri, MK Moravvej-Farshi, R Faez
IEEE Electron Device Letters 31 (12), 1458-1460, 2010
1012010
Geometrical effects on the thermoelectric properties of ballistic graphene antidot lattices
H Karamitaheri, M Pourfath, R Faez, H Kosina
Journal of Applied Physics 110 (5), 2011
832011
Compact formulae for number of conduction channels in various types of graphene nanoribbons at various temperatures
SH Nasiri, R Faez, MK Moravvej-Farshi
Modern Physics Letters B 26 (01), 1150004, 2012
452012
A novel graphene nanoribbon field effect transistor with two different gate insulators
MA Eshkalak, R Faez, S Haji-Nasiri
Physica E: Low-dimensional Systems and Nanostructures 66, 133-139, 2015
362015
Atomistic study of the lattice thermal conductivity of rough graphene nanoribbons
H Karamitaheri, M Pourfath, R Faez, H Kosina
IEEE Transactions on Electron Devices 60 (7), 2142-2147, 2013
362013
Modeling comparison of graphene nanoribbon field effect transistors with single vacancy defect
A Nazari, R Faez, H Shamloo
Superlattices and Microstructures 97, 28-45, 2016
332016
Improving ION/IOFF and sub-threshold swing in graphene nanoribbon field-effect transistors using single vacancy defects
A Nazari, R Faez, H Shamloo
Superlattices and Microstructures 86, 483-492, 2015
312015
Stability analysis in multiwall carbon nanotube bundle interconnects
S Haji-Nasiri, R Faez, MK Moravvej-Farshi
Microelectronics Reliability 52 (12), 3026-3034, 2012
242012
Time Domain Analysis of Graphene Nanoribbon Interconnects Based on Transmission Line Model
S Haji Nasiri, MK Moravvej-Farshi, R Faez
Iranian Journal of Electrical and Electronic Engineering 8 (1), 37-44, 2012
242012
Quantum simulation study of gate-all-around (GAA) silicon nanowire transistor and double gate metal oxide semiconductor field effect transistor (DG MOSFET)
R Hosseini, M Fathipour, R Faez
International Journal of the Physical Sciences 7 (28), 5054-5061, 2012
232012
A 3D analytical modeling of tri-gate tunneling field-effect transistors
S Marjani, SE Hosseini, R Faez
Journal of Computational Electronics 15, 820-830, 2016
222016
Using of thermoelectric devices in photovoltaic cells in order to increase efficiency
S Ahadi, HR Hoseini, R Faez
Indian Journal of Scientific Research 2 (1), 20-26, 2014
202014
A new SPICE macro-model for simulation of single electron circuits
M Karimian, M Dousti, M Pouyan, R Faez
2009 International Conference on Microelectronics-ICM, 228-231, 2009
202009
Implementation of open boundary problems in photo-conductive antennas by using convolutional perfectly matched layers
E Moreno, Z Hemmat, JB Roldán, MF Pantoja, AR Bretones, SG García, ...
IEEE Transactions on Antennas and Propagation 64 (11), 4919-4922, 2016
192016
Modeling of a Vertical Tunneling Transistor Based on Graphene–MoS2Heterostructure
A Horri, R Faez, M Pourfath, G Darvish
IEEE Transactions on Electron Devices 64 (8), 3459-3465, 2017
182017
Crosstalk stability analysis in multilayer graphene nanoribbon interconnects
L Akbari, R Faez
Circuits, Systems, and Signal Processing 32, 2653-2666, 2013
182013
Calculation of confined phonon spectrum in narrow silicon nanowires using the valence force field method
H Karamitaheri, N Neophytou, MK Taheri, R Faez, H Kosina
Journal of electronic materials 42, 2091-2097, 2013
172013
Design and simulation of a high power single mode 1550nm InGaAsP VCSELs
R Faez, A Marjani, S Marjani
IEICE Electronics Express 8 (13), 1096-1101, 2011
162011
A silicon doped hafnium oxide ferroelectric p–n–p–n SOI tunneling field–effect transistor with steep subthreshold slope and high switching state current ratio
S Marjani, SE Hosseini, R Faez
AIP Advances 6 (9), 2016
152016
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Articles 1–20