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Franz P. G. Fengler
Franz P. G. Fengler
NaMLab gGmbH
Verified email at namlab.com
Title
Cited by
Cited by
Year
Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors
M Pešić, FPG Fengler, L Larcher, A Padovani, T Schenk, ED Grimley, ...
Advanced Functional Materials 26 (25), 4601-4612, 2016
6832016
Unveiling the double-well energy landscape in a ferroelectric layer
M Hoffmann, FPG Fengler, M Herzig, T Mittmann, B Max, U Schroeder, ...
Nature 565 (7740), 464-467, 2019
3562019
Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: A comparison of model and experiment
MH Park, YH Lee, HJ Kim, T Schenk, W Lee, K Do Kim, FPG Fengler, ...
Nanoscale 9 (28), 9973-9986, 2017
2972017
Lanthanum-doped hafnium oxide: a robust ferroelectric material
U Schroeder, C Richter, MH Park, T Schenk, M Pesic, M Hoffmann, ...
Inorganic chemistry 57 (5), 2752-2765, 2018
2862018
Effect of Zr Content on the Wake-Up Effect in Hf1–xZrxO2 Films
MH Park, HJ Kim, YJ Kim, YH Lee, T Moon, KD Kim, SD Hyun, F Fengler, ...
ACS applied materials & interfaces 8 (24), 15466-15475, 2016
1932016
Domain pinning: Comparison of hafnia and PZT based ferroelectrics
FPG Fengler, M Pešić, S Starschich, T Schneller, C Künneth, U Böttger, ...
Advanced Electronic Materials 3 (4), 1600505, 2017
1242017
Optimizing process conditions for improved Hf1− xZrxO2 ferroelectric capacitor performance
T Mittmann, FPG Fengler, C Richter, MH Park, T Mikolajick, U Schroeder
Microelectronic Engineering 178, 48-51, 2017
992017
On the relationship between field cycling and imprint in ferroelectric Hf0. 5Zr0. 5O2
FPG Fengler, M Hoffmann, S Slesazeck, T Mikolajick, U Schroeder
Journal of Applied Physics 123 (20), 2018
902018
Analysis of performance instabilities of Hafnia‐based ferroelectrics using modulus spectroscopy and thermally stimulated depolarization currents
FPG Fengler, R Nigon, P Muralt, ED Grimley, X Sang, V Sessi, ...
Advanced Electronic Materials 4 (3), 1700547, 2018
622018
Negative capacitance for electrostatic supercapacitors
M Hoffmann, FPG Fengler, B Max, U Schroeder, S Slesazeck, T Mikolajick
Advanced Energy Materials 9 (40), 1901154, 2019
592019
Root cause of degradation in novel HfO2-based ferroelectric memories
M Pesic, FPG Fengler, S Slesazeck, U Schroeder, T Mikolajick, L Larcher, ...
2016 IEEE International Reliability Physics Symposium (IRPS), MY-3-1-MY-3-5, 2016
402016
A silicon nanowire ferroelectric field‐effect transistor
V Sessi, M Simon, H Mulaosmanovic, D Pohl, M Loeffler, T Mauersberger, ...
Advanced Electronic Materials 6 (4), 1901244, 2020
332020
Comparison of hafnia and PZT based ferroelectrics for future non-volatile FRAM applications
FPG Fengler, M Pešić, S Starschich, T Schneller, U Böttger, T Schenk, ...
2016 46th European Solid-State Device Research Conference (ESSDERC), 369-372, 2016
332016
Field cycling behavior of ferroelectric HfO2-based capacitors
F Fengler, MH Park, T Schenk, M Pešić, U Schroeder
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices …, 2019
92019
Comparative study of ITO and TiN fabricated by low-temperature RF biased sputtering
DK Simon, D Tröger, T Schenk, I Dirnstorfer, FPG Fengler, PM Jordan, ...
Journal of Vacuum Science & Technology A 34 (2), 2016
72016
Low‐thermal budget flash light annealing for Al2O3 surface passivation
DK Simon, T Henke, PM Jordan, FPG Fengler, T Mikolajick, JW Bartha, ...
physica status solidi (RRL)–Rapid Research Letters 9 (11), 631-635, 2015
52015
2D mapping of chemical and field effect passivation of Al2O3 on silicon substrates
PM Jordan, DK Simon, FPG Fengler, T Mikolajick, I Dirnstorfer
Energy Procedia 77, 91-98, 2015
52015
10 Years Fluorite-type Ferroelectrics–A Survey
T Schenk, M Pešić, MH Park, M Hoffmann, H Mulaosmanovic, C Richter, ...
22017
Investigation of local and integral polarization switching behavior of ultrathin HfObased films
P Buragohain, O Bak, A Chernikova, A Zenkevich, U Schroeder, ...
Bulletin of the American Physical Society 62, 2017
22017
Analysis of the Field Cycling Behavior of Ferroelectric Capacitor Structures Based on Hafnia Zirconia Films
FPG Fengler
Technische Universität Dresden, 2019
12019
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