Debbie G. Senesky, Ph.D.
Debbie G. Senesky, Ph.D.
Assistant Professor, Stanford University
Verified email at stanford.edu - Homepage
Title
Cited by
Cited by
Year
A SiC MEMS resonant strain sensor for harsh environment applications
RG Azevedo, DG Jones, AV Jog, B Jamshidi, DR Myers, L Chen, X Fu, ...
IEEE Sensors Journal 7 (4), 568-576, 2007
1712007
Harsh environment silicon carbide sensors for health and performance monitoring of aerospace systems: A review
DG Senesky, B Jamshidi, KB Cheng, AP Pisano
IEEE Sensors Journal 9 (11), 1472-1478, 2009
1492009
AlN/3C–SiC composite plate enabling high‐frequency and high‐Q micromechanical resonators
CM Lin, YY Chen, VV Felmetsger, DG Senesky, AP Pisano
Advanced Materials 24 (20), 2722-2727, 2012
1332012
Advances in silicon carbide science and technology at the micro-and nanoscales
R Maboudian, C Carraro, DG Senesky, CS Roper
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 31 (5 …, 2013
1172013
Solar-blind photodetectors for harsh electronics
DS Tsai, WC Lien, DH Lien, KM Chen, ML Tsai, DG Senesky, YC Yu, ...
Scientific reports 3 (1), 1-5, 2013
822013
AlN thin films grown on epitaxial 3C–SiC (100) for piezoelectric resonant devices
CM Lin, WC Lien, VV Felmetsger, MA Hopcroft, DG Senesky, AP Pisano
Applied Physics Letters 97 (14), 141907, 2010
792010
High-Q aluminum nitride Lamb wave resonators with biconvex edges
CM Lin, YJ Lai, JC Hsu, YY Chen, DG Senesky, AP Pisano
Applied Physics Letters 99 (14), 143501, 2011
762011
Temperature sensor based on 4H-silicon carbide pn diode operational from 20 C to 600 C
N Zhang, CM Lin, DG Senesky, AP Pisano
Applied Physics Letters 104 (7), 073504, 2014
602014
4H–SiC Metal–Semiconductor–Metal Ultraviolet Photodetectors in Operation of 450
WC Lien, DS Tsai, DH Lien, DG Senesky, JH He, AP Pisano
IEEE electron device letters 33 (11), 1586-1588, 2012
542012
Surface acoustic wave devices on AlN/3C–SiC/Si multilayer structures
CM Lin, YY Chen, VV Felmetsger, WC Lien, T Riekkinen, DG Senesky, ...
Journal of Micromechanics and Microengineering 23 (2), 025019, 2013
532013
Anchor loss reduction in AlN Lamb wave resonators using phononic crystal strip tethers
CM Lin, JC Hsu, DG Senesky, AP Pisano
2014 IEEE International Frequency Control Symposium (FCS), 1-5, 2014
352014
Low-temperature, ion beam-assisted SiC thin films with antireflective ZnO nanorod arrays for high-temperature photodetection
WC Lien, DS Tsai, SH Chiu, DG Senesky, R Maboudian, AP Pisano, ...
IEEE Electron Device Letters 32 (11), 1564-1566, 2011
342011
Silicon carbide resonant tuning fork for microsensing applications in high-temperature and high G-shock environments
DR Myers, KB Cheng, B Jamshidi, RG Azevedo, DG Senesky, L Chen, ...
Journal of Micro/Nanolithography, MEMS, and MOEMS 8 (2), 021116, 2009
332009
New developments in sensing technology for structural health monitoring
SC Mukhopadhyay
Springer Science & Business Media, 2011
322011
Micro-electromechanical system (MEMS) based current and magnetic field sensor having improved sensitivities
E Berkcan, S Chandrasekaran, CJ Kapusta, LJ Meyer, GS Claydon, ...
US Patent 7,221,144, 2007
322007
Silicon carbide coated MEMS strain sensor for harsh environment applications
RG Azevedo, J Zhang, DG Jones, DR Myers, AV Jog, B Jamshidi, ...
2007 IEEE 20th International Conference on Micro Electro Mechanical Systems …, 2007
322007
ZnO nanorod arrays and direct wire bonding on GaN surfaces for rapid fabrication of antireflective, high-temperature ultraviolet sensors
H So, DG Senesky
Applied Surface Science 387, 280-284, 2016
272016
Suppression of Persistent Photoconductivity in AlGaN/GaN Ultraviolet Photodetectors Using In Situ Heating
M Hou, H So, AJ Suria, AS Yalamarthy, DG Senesky
IEEE Electron Device Letters 38 (1), 56-59, 2016
262016
Operation of ohmic Ti/Al/Pt/Au multilayer contacts to GaN at 600 C in air
M Hou, DG Senesky
Applied Physics Letters 105 (8), 081905, 2014
262014
Profile evolution of high aspect ratio silicon carbide trenches by inductive coupled plasma etching
KM Dowling, EH Ransom, DG Senesky
Journal of Microelectromechanical Systems 26 (1), 135-142, 2016
252016
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