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Minmin Hou
Minmin Hou
Verified email at stanford.edu
Title
Cited by
Cited by
Year
Suppression of Persistent Photoconductivity in AlGaN/GaN Ultraviolet Photodetectors Using In Situ Heating
M Hou, H So, AJ Suria, AS Yalamarthy, DG Senesky
IEEE Electron Device Letters 38 (1), 56-59, 2016
782016
Operation of ohmic Ti/Al/Pt/Au multilayer contacts to GaN at 600° C in air
M Hou, DG Senesky
Applied Physics Letters 105 (8), 2014
302014
Degradation of 2DEG transport properties in GaN-capped AlGaN/GaN heterostructures at 600° C in oxidizing and inert environments
M Hou, SR Jain, H So, TA Heuser, X Xu, AJ Suria, DG Senesky
Journal of Applied Physics 122 (19), 2017
142017
Interdigitated Pt-GaN Schottky interfaces for high-temperature soot-particulate sensing
H So, M Hou, SR Jain, J Lim, DG Senesky
Applied Surface Science 368, 104-109, 2016
132016
Characterization of gallium nitride microsystems within radiation and high-temperature environments
HC Chiamori, M Hou, CA Chapin, A Shankar, DG Senesky
Reliability, Packaging, Testing, and Characterization of MOEMS/MEMS …, 2014
132014
Effects of radiation and temperature on gallium nitride (GaN) metal-semiconductor-metal ultraviolet photodetectors
HC Chiamori, C Angadi, A Suria, A Shankar, M Hou, S Bhattacharya, ...
Sensors for Extreme Harsh Environments 9113, 9-15, 2014
92014
Characterization of Gallium Nitride Heterostructures for Strain Sensing at Elevated Temperatures
CA Chapin, HC Chiamori, M Hou, DG Senesky
International Workshop on Structural Health Monitoring 9, 1621–1628, 2013
62013
2DEG-heated AlGaN/GaN micro-hotplates for high-temperature chemical sensing microsystems
M Hou, AJ Suria, AS Yalamarthy, H So, DG Senesky
Proc. Solid-State Sens. Actuators Microsyst. Workshop, 356-359, 2016
42016
Finite element thermal analysis of localized heating in AlGaN/GaN HEMT based sensors
M Hou, CC Pan, M Asheghi, DG Senesky
Fourteenth Intersociety Conference on Thermal and Thermomechanical Phenomena …, 2014
32014
Suspended Aluminum Gallium Nitride/Gallium Nitride-on-Silicon Microstructures for High-Temperature-Tolerant Micro-Electromechanical Systems
M Hou
Stanford University, 2017
22017
Gallium Nitride Microelectronics for High-Temperature Environments
DG Senesky, H So, AJ Suria, AS Yalamarthy, SR Jain, CA Chapin, ...
Semiconductor-Based Sensors, 395-433, 2017
12017
Development of Fluorine Plasma Treatment for AlGaN/GaN Device Isolation
CA Chapin, M Hou, SNF Mentor, U Raghuram
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