| Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN AM Fischer, Z Wu, K Sun, Q Wei, Y Huang, R Senda, D Iida, M Iwaya, ... Applied Physics Express 2 (4), 041002, 2009 | 84 | 2009 |
| Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions J Kim, Z Lochner, MH Ji, S Choi, HJ Kim, JS Kim, RD Dupuis, AM Fischer, ... Journal of Crystal Growth 388, 143-149, 2014 | 66 | 2014 |
| Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth, part I: Growth of AlInN on AlN and effects of prior coating S Choi, HJ Kim, Z Lochner, J Kim, RD Dupuis, AM Fischer, R Juday, ... Journal of Crystal Growth 388, 137-142, 2014 | 59 | 2014 |
| Compositional instability in InAlN/GaN lattice-matched epitaxy QY Wei, T Li, Y Huang, JY Huang, ZT Chen, T Egawa, FA Ponce Applied Physics Letters 100 (9), 2012 | 43 | 2012 |
| The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells T Li, QY Wei, AM Fischer, JY Huang, YU Huang, FA Ponce, JP Liu, ... Applied Physics Letters 102 (4), 2013 | 29 | 2013 |
| Effect of misfit dislocations on luminescence in m-plane InGaN quantum wells Y Huang, KW Sun, AM Fischer, QY Wei, R Juday, FA Ponce, R Kato, ... Applied Physics Letters 98 (26), 2011 | 21 | 2011 |
| Hydrogen-related, deeply bound excitons in Mg-doped GaN films R Juday, AM Fischer, Y Huang, JY Huang, HJ Kim, JH Ryou, RD Dupuis, ... Applied Physics Letters 103 (8), 2013 | 15 | 2013 |
| Optical Properties of Strain‐balanced InAs/InAs 1‐x Sb x Type‐II Superlattices EH Steenbergen, Y Huang, JH Ryou, RD Dupuis, K Nunna, DL Huffaker, ... AIP Conference Proceedings 1416 (1), 122-125, 2011 | 7 | 2011 |
| Metal-organic chemical vapour deposition growth of InAs/GaSb type-II superlattice photodiodes A Petschke, M Mandl, SL Chuang, Y Huang, JH Ryou, RD Dupuis Electronics letters 46 (16), 1151-1152, 2010 | 7 | 2010 |
| Doping-dependent device functionality of InP/InAlGaAs long-wavelength light-emitting transistors Y Huang, JH Ryou, RD Dupuis, F Dixon, M Feng, N Holonyak, ... Applied physics letters 99 (10), 2011 | 4 | 2011 |
| Structural and optical characterization of type-II InAs/InAs1ŔxSbx superlattices grown by metalorganic chemical vapor deposition EH Steenbergen, Y Huang, JH Ryou, L Ouyang, JJ Li, DJ Smith, ... Appl. Phys. Lett 99, 071111, 2011 | 2 | 2011 |
| Device performance of light emitting transistors with C-doped and Zn-doped base layers Y Huang, JH Ryou, RD Dupuis, F Dixon, N Holonyak, M Feng 2009 IEEE International Conference on Indium Phosphide & Related Materials …, 2009 | 2 | 2009 |
| Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II J Kim, Z Lochner, MH Ji, S Choi, HJ Kim, JS Kim, RD Dupuis, AM Fischer, ... Journal of Crystal Growth, 2013 | | 2013 |
