| 345-MW/cm² 2608-V NO₂ p-Type Doped Diamond MOSFETs With an Al₂O₃ Passivation Overlayer on Heteroepitaxial Diamond NC Saha, SW Kim, T Oishi, Y Kawamata, K Koyama, M Kasu IEEE Electron Device Letters 42 (6), 903-906, 2021 | 37 | 2021 |
| Modeling and performance analysis of a hybrid power system NC Saha, S Acharjee, MAS Mollah, KT Rahman, FHM Rafi, MJA Rabin, ... 2013 International Conference on Informatics, Electronics and Vision (ICIEV …, 2013 | 27 | 2013 |
| Heterointerface properties of diamond MOS structures studied using capacitance–voltage and conductance–frequency measurements NC Saha, M Kasu Diamond and Related Materials 91, 219-224, 2019 | 26 | 2019 |
| 145-MW/cm2 Heteroepitaxial Diamond MOSFETs With NO2 p-Type Doping and an Al2O3 Passivation Layer NC Saha, T Oishi, S Kim, Y Kawamata, K Koyama, M Kasu IEEE Electron Device Letters 41 (7), 1066-1069, 2020 | 24 | 2020 |
| Fabrication of diamond modulation-doped FETs by NO2 delta doping in an Al2O3 gate layer M Kasu, NC Saha, T Oishi, SW Kim Applied Physics Express 14 (5), 051004, 2021 | 21 | 2021 |
| 875-MW/cm2 Low-Resistance NO2 p-type Doped Chemical Mechanical Planarized Diamond MOSFETs NC Saha, SW Kim, T Oishi, M Kasu IEEE Electron Device Letters 43 (5), 777 - 780, 2022 | 14 | 2022 |
| Improvement of the Al2O3/NO2/H-diamond MOS FET by using au gate metal and its analysis NC Saha, M Kasu Diamond and Related Materials 92, 81-85, 2019 | 13 | 2019 |
| 3326-V Modulation-Doped Diamond MOSFETs NC Saha, SW Kim, T Oishi, M Kasu IEEE Electron Device Letters, 2022 | 10 | 2022 |
| 3659-V NO2 p-Type Doped Diamond MOSFETs on Misoriented Heteroepitaxial Diamond Substrates NC Saha, SW Kim, K Koyama, T Oishi, M Kasu IEEE Electron Device Letters, 2022 | 8 | 2022 |
| Band Alignment of Al2O3 Layer Deposited NO and SO2 Exposed (001) H‐Diamond Heterointerfaces Studied by Synchrotron Radiation X‐Ray Photoelectron … NC Saha, K Takahashi, M Imamura, M Kasu physica status solidi (a) 215 (22), 1800237, 2018 | 8 | 2018 |
| Observation of nitrogen species at Al2O3/NO2/H-diamond interfaces by synchrotron radiation x-ray photoemission spectroscopy NC Saha, K Takahashi, M Imamura, M Kasu Journal of Applied Physics 128 (13), 135702, 2020 | 5 | 2020 |
| Long Stress (190 h) Operation of NO2 p-Type Doped Diamond MOSFETs NC Saha, T Shiratsuchi, SW Kim, K Koyama, T Oishi, M Kasu IEEE Electron Device Letters, 2023 | 2 | 2023 |
| Fast Switching NO2-doped p-Channel Diamond MOSFETs NC Saha, T Shiratsuchi, SW Kim, K Koyama, T Oishi, M Kasu IEEE Electron Device Letters, 2023 | 2 | 2023 |
| 1651-V All-ion-implanted Schottky Barrier Diode on Heteroepitaxial Diamond with 3.6×105 On/off Ratio NC Saha, Y Irie, Y Seki, Y Hoshino, J Nakata, SW Kim, T Oishi, M Kasu IEEE Electron Device Letters, 2022 | 2 | 2022 |
| The improvement of Schottky barrier diodes fabricated only by B ion implantation doping accomplished by refinement of the electrode structure Y Seki, NC Saha, S Shigematsu, Y HOSHINO, J Nakata, T OISHI, M Kasu Japanese Journal of Applied Physics, 2023 | 1 | 2023 |
| Interface Properties of Diamond MOS Diodes Studied by Capacitance-Voltage and Conductance Methods-NO2 Hole Doping Effect NC Saha, M Kasu Extended Abstracts of Int. Conf. on Solid State Devices and Materials, 1066, 2017 | 1 | 2017 |
| Stable AC Stress Operation (100 h) of NO2 p-Type Doped Diamond MOSFETs NC Saha, T Shiratsuchi, T Oishi, M Kasu IEEE Electron Device Letters, 2023 | | 2023 |
| Observation of Nitrogen species at Al2O3/NO2/H-diamond Interfaces Using Synchrotron X-ray Photoemission Spectroscopy NC Saha, K Takahashi, M Imamura, M Kasu JSAP Annual Meetings Extended Abstracts The 68th JSAP Spring Meeting 2021 …, 2021 | | 2021 |
| 2608 V Operation of NO2-Doped p-channel Diamond MOSFETs NC Saha, SW Kim, T Oishi, Y Kawamata, K Koyama, M Kasu JSAP Annual Meetings Extended Abstracts The 68th JSAP Spring Meeting 2021 …, 2021 | | 2021 |
| 145-MW/cm2 NO2-Doped Diamond MOSFETs NC Saha, T Oishi, S Kim, Y Kawamata, K Koyama, M Kasu JSAP Annual Meetings Extended Abstracts The 81st JSAP Autumn Meeting 2020 …, 2020 | | 2020 |
