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Thomas Heuser
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Degradation of 2DEG transport properties in GaN-capped AlGaN/GaN heterostructures at 600° C in oxidizing and inert environments
M Hou, SR Jain, H So, TA Heuser, X Xu, AJ Suria, DG Senesky
Journal of Applied Physics 122 (19), 2017
142017
Thickness engineering of atomic layer deposited Al2O3 films to suppress interfacial reaction and diffusion of Ni/Au gate metal in AlGaN/GaN HEMTs up to 600° C in air
AJ Suria, AS Yalamarthy, TA Heuser, A Bruefach, CA Chapin, H So, ...
Applied Physics Letters 110 (25), 2017
142017
High-temperature ultraviolet photodetectors: a review
RA Miller, H So, TA Heuser, DG Senesky
arXiv preprint arXiv:1809.07396, 2018
102018
Electron beam irradiation of gallium nitride-on-silicon betavoltaics fabricated with a triple mesa etch
T Heuser, M Braun, P McIntyre, DG Senesky
Journal of Applied Physics 130 (17), 2021
62021
Effect of proton irradiation temperature on persistent photoconductivity in zinc oxide metal-semiconductor-metal ultraviolet photodetectors
TA Heuser, CA Chapin, MA Holliday, Y Wang, DG Senesky
Journal of Applied Physics 131 (15), 2022
42022
Effect of Proton Irradiation Temperature on Zinc Oxide Metal-Semiconductor-Metal Ultraviolet Photodetectors
T Heuser, C Chapin, M Holliday, Y Wang, DG Senesky
arXiv preprint arXiv:1912.02321, 2019
22019
Dynamic Biasing for Improved On-Orbit Total-Dose Lifetimes of Commercial Semiconductor Devices
M Holliday, T Heuser, Z Manchester, D Senesky
Authorea Preprints, 2023
12023
Dynamic Biasing for Improved On-Orbit Total-Dose Lifetimes of Commercial Electronic Devices
M Holliday, TA Heuser, Z Manchester, DG Senesky
IEEE Transactions on Aerospace and Electronic Systems 58 (4), 3326-3336, 2022
12022
Ultraviolet detectors for harsh environments
RA Miller, H So, TA Heuser, AS Yalamarthy, PF Satterthwaite, ...
Photodetectors, 267-291, 2023
2023
Transduction Characterization of Robust Wurtzite Wide-Bandgap Semiconductor Devices Under Irradiation
TA Heuser
Stanford University, 2021
2021
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Articles 1–10