Följ
Shinji Yokogawa
Titel
Citeras av
Citeras av
År
New analysis methods for comprehensive understanding of random telegraph noise
T Nagumo, K Takeuchi, S Yokogawa, K Imai, Y Hayashi
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
1292009
Single-charge-based modeling of transistor characteristics fluctuations based on statistical measurement of RTN amplitude
K Takeuchi, T Nagumo, S Yokogawa, K Imai, Y Hayashi
2009 Symposium on VLSI Technology, 54-55, 2009
1252009
Direct observation of RTN-induced SRAM failure by accelerated testing and its application to product reliability assessment
K Takeuchi, T Nagumo, K Takeda, S Asayama, S Yokogawa, K Imai, ...
2010 Symposium on VLSI Technology, 189-190, 2010
752010
Electromigration performance of multi-level damascene copper interconnects
S Yokogawa, N Okada, Y Kakuhara, H Takizawa
Microelectronics Reliability 41 (9-10), 1409-1416, 2001
662001
Scaling Impacts on Electromigration in Narrow Single‐Damascene Cu Interconnects
S Yokogawa, H Tsuchiya
AIP Conference Proceedings 741 (1), 124-134, 2004
572004
Effects of Al doping on the electromigration performance of damascene Cu interconnects
S Yokogawa, H Tsuchiya
Journal of Applied Physics 101 (1), 2007
502007
Electromigration lifetimes and void growth at low cumulative failure probability
H Tsuchiya, S Yokogawa
Microelectronics Reliability 46 (9-11), 1415-1420, 2006
422006
Analysis of Al doping effects on resistivity and electromigration of copper interconnects
S Yokogawa, H Tsuchiya, Y Kakuhara, K Kikuta
IEEE Transactions on Device and Materials Reliability 8 (1), 216-221, 2008
382008
Electromigration-induced void growth kinetics in SiNx-passivated single-damascene Cu lines
S Yokogawa
Japanese journal of applied physics 43 (9R), 5990, 2004
302004
An approach to renewable-energy dominant grids via distributed electrical energy platform for IoT systems
H Ichikawa, S Yokogawa, Y Kawakita, K Sawada, T Sogabe, A Minegishi, ...
2019 IEEE International Conference on Communications, Control, and Computing …, 2019
272019
Tradeoff characteristics between resistivity and reliability for scaled-down Cu-based interconnects
S Yokogawa, K Kikuta, H Tsuchiya, T Takewaki, M Suzuki, H Toyoshima, ...
IEEE transactions on electron devices 55 (1), 350-357, 2007
272007
Method of predicting reliability of semiconductor device, reliability prediction system using the same and storage medium storing program causing computer to execute the same
S Yokogawa
US Patent 8,161,428, 2012
252012
Statistics of breakdown field and time-dependent dielectric breakdown in contact-to-poly modules
S Yokogawa, S Uno, I Kato, H Tsuchiya, T Shimizu, M Sakamoto
2011 International Reliability Physics Symposium, 2F. 4.1-2F. 4.6, 2011
242011
Method of designing interconnects
S Yokogawa
US Patent 6,816,995, 2004
212004
Stress relaxation in dual-damascene Cu interconnects to suppress stress-induced voiding
M Kawano, T Fukase, Y Yamamoto, T Ito, S Yokogawa, H Tsuda, ...
Proceedings of the IEEE 2003 International Interconnect Technology …, 2003
212003
Design apparatus of semiconductor device, design method of semiconductor device, and semiconductor device
S Yokogawa
US Patent App. 13/194,607, 2012
172012
Liner-and barrier-free NiAl metallization: A perspective from TDDB reliability and interface status
L Chen, D Ando, Y Sutou, S Yokogawa, J Koike
Applied Surface Science 497, 143810, 2019
162019
Statistical Analysis of Lifetime Distribution of Time-dependent Dielectric Breakdown in Cu/low-k Interconnects by Incorporation of Overlay Error Model
S Yokogawa, H Tsuchiya
Japanese Journal of Applied Physics 49 (5S2), 05FE01, 2010
152010
Semiconductor device and manufacturing method thereof
T Usami, H Tsuchiya, Y Miura, T Nakamura, K Ohto, C Ohto, S Yokogawa
US Patent 8,749,058, 2014
142014
Joule heating effects on electromigration in Cu/low-κ interconnects
S Yokogawa, Y Kakuhara, H Tsuchiya
2009 IEEE International Reliability Physics Symposium, 837-843, 2009
142009
Systemet kan inte utföra åtgärden just nu. Försök igen senare.
Artiklar 1–20