| Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at Vds = 0.3 V E Memisevic, J Svensson, M Hellenbrand, E Lind, LE Wernersson Electron Devices Meeting (IEDM), 2016 IEEE International, 19.1. 1-19.1. 4, 2016 | 83 | 2016 |
| Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S= 48 mV/decade and I on= 10 μA/μm for I off= 1 nA/μm at V ds= 0.3 V E Memisevic, J Svensson, M Hellenbrand, E Lind, LE Wernersson IEDM Tech. Dig., 19.1. 1-19.1. 4, 2016 | 83 | 2016 |
| High-frequency gate-all-around vertical InAs nanowire MOSFETs on Si substrates S Johansson, E Memisevic, LE Wernersson, E Lind IEEE electron device letters 35 (5), 518-520, 2014 | 67 | 2014 |
| Individual defects in InAs/InGaAsSb/GaSb nanowire tunnel field-effect transistors operating below 60 mV/decade E Memisevic, M Hellenbrand, E Lind, AR Persson, S Sant, A Schenk, ... Nano letters 17 (7), 4373-4380, 2017 | 54 | 2017 |
| III-V heterostructure nanowire tunnel FETs E Lind, E Memišević, AW Dey, LE Wernersson IEEE Journal of the Electron Devices Society 3 (3), 96-102, 2015 | 45 | 2015 |
| Scaling of vertical InAs–GaSb nanowire tunneling field-effect transistors on Si E Memišević, J Svensson, M Hellenbrand, E Lind, LE Wernersson IEEE Electron Device Letters 37 (5), 549-552, 2016 | 40 | 2016 |
| InAs/InGaAsSb/GaSb nanowire tunnel field-effect transistors E Memisevic, J Svensson, E Lind, LE Wernersson IEEE Transactions on Electron Devices 64 (11), 4746-4751, 2017 | 30 | 2017 |
| Thin electron beam defined hydrogen silsesquioxane spacers for vertical nanowire transistors E Memišević, E Lind, LE Wernersson Journal of Vacuum Science & Technology B, Nanotechnology and …, 2014 | 18 | 2014 |
| Vertical nanowire TFETs with channel diameter down to 10 nm and point SMIN of 35 mV/decade E Memisevic, J Svensson, E Lind, LE Wernersson IEEE Electron Device Letters 39 (7), 1089-1091, 2018 | 17 | 2018 |
| Impact of band-tails on the subthreshold swing of III-V tunnel field-effect transistor E Memisevic, E Lind, M Hellenbrand, J Svensson, LE Wernersson IEEE Electron Device Letters 38 (12), 1661-1664, 2017 | 15 | 2017 |
| Low-Frequency Noise in III–V Nanowire TFETs and MOSFETs M Hellenbrand, E Memišević, M Berg, OP Kilpi, J Svensson, ... IEEE Electron Device Letters 38 (11), 1520-1523, 2017 | 6 | 2017 |
| The impact of hetero-junction and oxide-interface traps on the performance of InAs/Si and InAs/GaAsSb nanowire tunnel FETs A Schenk, S Sant, K Moselund, H Riel, E Memisevic, LE Wernersson 2017 International Conference on Simulation of Semiconductor Processes and …, 2017 | 5 | 2017 |
| Impact of source doping on the performance of vertical InAs/InGaAsSb/GaSb nanowire Tunnel Field-Effect Transistors E Memisevic, J Svensson, E Lind, LE Wernersson Nanotechnology 29 (43), 2018 | 4 | 2018 |
| Vertical III-V Nanowire Tunnel Field-Effect Transistor E Memisevic The Department of Electrical and Information Technology, 2017 | 4 | 2017 |
| An experimental study of heterostructure tunnel FET nanowire arrays: Digital and analog figures of merit from 300K to 10K T Rosca, A Saeidi, E Memisevic, LE Wernersson, AM Ionescu 2018 IEEE International Electron Devices Meeting (IEDM), 13.5. 1-13.5. 4, 2018 | 3 | 2018 |
| RF characterization of vertical InAs nanowire MOSFETs with ftand fmaxabove 140 GHz S Johansson, E Memisevic, LE Wernersson, E Lind 26th International Conference on Indium Phosphide and Related Materials …, 2014 | 3 | 2014 |
| Capacitance Measurements in Vertical III-V Nanowire TFETs M Hellenbrand, E Memisevic, J Svensson, A Krishnaraja, E Lind, ... IEEE Electron Device Letters, 2018 | 2 | 2018 |
| Impact of Non-idealities on the Performance of InAs/(In) GaAsSb/GaSb Tunnel FETs S Sant, E Memisevic, LE Wernersson, A Schenk Nanoelectronic Devices 18 (1), 2018 | 1 | 2018 |
| InAs/GaSb vertical nanowire TFETs on Si for digital and analogue applications E Memišević, J Svensson, E Lind, LE Wernersson 2016 IEEE Silicon Nanoelectronics Workshop (SNW), 154-155, 2016 | 1 | 2016 |
| Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects A Saeidi, T Rosca, E Memisevic, I Stolichnov, M Cavalieri, LE Wernersson, ... Nano Letters 20 (5), 3255-3262, 2020 | | 2020 |
Wernersson Lars-ErikLund UniveristyVerified email at eit.lth.se
