Elvedin Memisevic
Elvedin Memisevic
QuTech, TU Delft
Verified email at tudelft.nl - Homepage
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Year
Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at Vds = 0.3 V
E Memisevic, J Svensson, M Hellenbrand, E Lind, LE Wernersson
Electron Devices Meeting (IEDM), 2016 IEEE International, 19.1. 1-19.1. 4, 2016
832016
Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S= 48 mV/decade and I on= 10 μA/μm for I off= 1 nA/μm at V ds= 0.3 V
E Memisevic, J Svensson, M Hellenbrand, E Lind, LE Wernersson
IEDM Tech. Dig., 19.1. 1-19.1. 4, 2016
832016
High-frequency gate-all-around vertical InAs nanowire MOSFETs on Si substrates
S Johansson, E Memisevic, LE Wernersson, E Lind
IEEE electron device letters 35 (5), 518-520, 2014
672014
Individual defects in InAs/InGaAsSb/GaSb nanowire tunnel field-effect transistors operating below 60 mV/decade
E Memisevic, M Hellenbrand, E Lind, AR Persson, S Sant, A Schenk, ...
Nano letters 17 (7), 4373-4380, 2017
542017
III-V heterostructure nanowire tunnel FETs
E Lind, E Memišević, AW Dey, LE Wernersson
IEEE Journal of the Electron Devices Society 3 (3), 96-102, 2015
452015
Scaling of vertical InAs–GaSb nanowire tunneling field-effect transistors on Si
E Memišević, J Svensson, M Hellenbrand, E Lind, LE Wernersson
IEEE Electron Device Letters 37 (5), 549-552, 2016
402016
InAs/InGaAsSb/GaSb nanowire tunnel field-effect transistors
E Memisevic, J Svensson, E Lind, LE Wernersson
IEEE Transactions on Electron Devices 64 (11), 4746-4751, 2017
302017
Thin electron beam defined hydrogen silsesquioxane spacers for vertical nanowire transistors
E Memišević, E Lind, LE Wernersson
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2014
182014
Vertical nanowire TFETs with channel diameter down to 10 nm and point SMIN of 35 mV/decade
E Memisevic, J Svensson, E Lind, LE Wernersson
IEEE Electron Device Letters 39 (7), 1089-1091, 2018
172018
Impact of band-tails on the subthreshold swing of III-V tunnel field-effect transistor
E Memisevic, E Lind, M Hellenbrand, J Svensson, LE Wernersson
IEEE Electron Device Letters 38 (12), 1661-1664, 2017
152017
Low-Frequency Noise in III–V Nanowire TFETs and MOSFETs
M Hellenbrand, E Memišević, M Berg, OP Kilpi, J Svensson, ...
IEEE Electron Device Letters 38 (11), 1520-1523, 2017
62017
The impact of hetero-junction and oxide-interface traps on the performance of InAs/Si and InAs/GaAsSb nanowire tunnel FETs
A Schenk, S Sant, K Moselund, H Riel, E Memisevic, LE Wernersson
2017 International Conference on Simulation of Semiconductor Processes and …, 2017
52017
Impact of source doping on the performance of vertical InAs/InGaAsSb/GaSb nanowire Tunnel Field-Effect Transistors
E Memisevic, J Svensson, E Lind, LE Wernersson
Nanotechnology 29 (43), 2018
42018
Vertical III-V Nanowire Tunnel Field-Effect Transistor
E Memisevic
The Department of Electrical and Information Technology, 2017
42017
An experimental study of heterostructure tunnel FET nanowire arrays: Digital and analog figures of merit from 300K to 10K
T Rosca, A Saeidi, E Memisevic, LE Wernersson, AM Ionescu
2018 IEEE International Electron Devices Meeting (IEDM), 13.5. 1-13.5. 4, 2018
32018
RF characterization of vertical InAs nanowire MOSFETs with ftand fmaxabove 140 GHz
S Johansson, E Memisevic, LE Wernersson, E Lind
26th International Conference on Indium Phosphide and Related Materials …, 2014
32014
Capacitance Measurements in Vertical III-V Nanowire TFETs
M Hellenbrand, E Memisevic, J Svensson, A Krishnaraja, E Lind, ...
IEEE Electron Device Letters, 2018
22018
Impact of Non-idealities on the Performance of InAs/(In) GaAsSb/GaSb Tunnel FETs
S Sant, E Memisevic, LE Wernersson, A Schenk
Nanoelectronic Devices 18 (1), 2018
12018
InAs/GaSb vertical nanowire TFETs on Si for digital and analogue applications
E Memišević, J Svensson, E Lind, LE Wernersson
2016 IEEE Silicon Nanoelectronics Workshop (SNW), 154-155, 2016
12016
Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects
A Saeidi, T Rosca, E Memisevic, I Stolichnov, M Cavalieri, LE Wernersson, ...
Nano Letters 20 (5), 3255-3262, 2020
2020
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