Jeffrey T. Glass
Cited by
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Raman scattering characterization of carbon bonding in diamond and diamondlike thin films
RJ Nemanich, JT Glass, G Lucovsky, RE Shroder
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 6 (3 …, 1988
Analysis of the composite structures in diamond thin films by Raman spectroscopy
RE Shroder, RJ Nemanich, JT Glass
Physical Review B 41 (6), 3738, 1990
Polyethylenimine-Enhanced Electrocatalytic Reduction of CO2 to Formate at Nitrogen-Doped Carbon Nanomaterials
S Zhang, P Kang, S Ubnoske, MK Brennaman, N Song, RL House, ...
Journal of the American Chemical Society 136 (22), 7845-7848, 2014
Characterization of bias-enhanced nucleation of diamond on silicon by invacuo surface analysis and transmission electron microscopy
BR Stoner, GHM Ma, SD Wolter, JT Glass
Rev. B 45 (11067), 11, 1992
Textured diamond growth on (100) β‐SiC via microwave plasma chemical vapor deposition
BR Stoner, JT Glass
Applied physics letters 60 (6), 698-700, 1992
Texture growth of diamond on silicon via in situ carburization and bias-enhanced nucleation
SD Wolter, BR Stoner, JT Glass, PJ Ellis, DS Buhaenko, CE Jenkins, ...
Appl. Phys. Lett 62, 1215, 1993
Characterization of diamond thin films: Diamond phase identification, surface morphology, and defect structures
BE Williams, JT Glass
Journal of Materials Research 4 (2), 373-384, 1989
Ti3C2Tx MXene-Reduced Graphene Oxide Composite Electrodes for Stretchable Supercapacitors
Y Zhou, K Maleski, B Anasori, JO Thostenson, Y Pang, Y Feng, K Zeng, ...
ACS nano 14 (3), 3576-3586, 2020
Chemical vapor deposition and characterization of 6H‐SiC thin films on off‐axis 6H‐SiC substrates
HS Kong, JT Glass, RF Davis
Journal of applied physics 64 (5), 2672-2679, 1988
Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide
RF Davis, Z Sitar, BE Williams, HS Kong, HJ Kim, JW Palmour, ...
Materials Science and Engineering: B 1 (1), 77-104, 1988
Correlation of the electrical properties of metal contacts on diamond films with the chemical nature of the metal-diamond interface. II. Titanium contacts: A carbide-forming metal
T Tachibana, BE Williams, JT Glass
Physical Review B 45 (20), 11975, 1992
Homoepitaxial growth of alpha-SiC thin films and semiconductor devices fabricated thereon
HS Kong, JT Glass, RF Davis
US Patent 4,912,064, 1990
Growth and characterization of diamond films on nondiamond substrates for electronic applications
W Zhu, BR Stoner, BE Williams, JT Glass
Proceedings of the IEEE 79 (5), 621-646, 1991
Material and electrical characterization of polycrystalline boron‐doped diamond films grown by microwave plasma chemical vapor deposition
K Nishimura, K Das, JT Glass
Journal of applied physics 69 (5), 3142-3148, 1991
Additive engineering for high-performance room-temperature-processed perovskite absorbers with micron-size grains and microsecond-range carrier lifetimes
Q Han, Y Bai, J Liu, K Du, T Li, D Ji, Y Zhou, C Cao, D Shin, J Ding, ...
Energy & Environmental Science 10 (11), 2365-2371, 2017
The origin of the broadband luminescence and the effect of nitrogen doping on the optical properties of diamond films
L Bergman, MT McClure, JT Glass, RJ Nemanich
Journal of applied physics 76 (5), 3020-3027, 1994
Diamond, silicon carbide and related wide bandgap semiconductors
JT Glass, R Messier, N Fujimori
Pittsburgh, PA (USA); Materials Research Society, 1990
Electron emission from diamond coated silicon field emitters
J Liu, VV Zhirnov, GJ Wojak, AF Myers, WB Choi, JJ Hren, SD Wolter, ...
Applied physics letters 65 (22), 2842-2844, 1994
Growth rate, surface morphology, and defect microstructures of β–SiC films chemically vapor deposited on 6H–SiC substrates
HS Kong, JT Glass, RF Davis
Journal of Materials Research 4 (1), 204-214, 1989
Epitaxial nucleation of diamond on β-SiC via bias-enhanced microwave plasma chemical vapor deposition
BR Stoner, GH Ma, SD Wolter, W Zhu, YC Wang, RF Davis, JT Glass
Diamond and related materials 2 (2-4), 142-146, 1993
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