jean-charles Barbe
TitleCited byYear
Surface diffusion dewetting of thin solid films: Numerical method and application to Si∕ SiO 2
E Dornel, JC Barbe, F De Crécy, G Lacolle, J Eymery
Physical Review B 73 (11), 115427, 2006
Challenges for 3D IC integration: bonding quality and thermal management
P Leduc, F de Crecy, M Fayolle, B Charlet, T Enot, M Zussy, B Jones, ...
2007 IEEE International Interconnect Technology Conferencee, 210-212, 2007
Nanoscaled MOSFET Transistors on Strained Si, SiGe, Ge Layers: Some Integration and Electrical Properties Features
TP Ernst, F Andrieu, O Weber, JM Hartmann, C Dupre, O Faynot, ...
ECS Transactions 3 (7), 947-961, 2006
How to control solid state dewetting: A short review
F Leroy, F Cheynis, Y Almadori, S Curiotto, M Trautmann, JC Barbe, ...
Surface Science Reports 71 (2), 391-409, 2016
Novel 3D integration process for highly scalable Nano-Beam stacked-channels GAA (NBG) FinFETs with HfO2/TiN gate stack
T Ernst, C Dupre, C Isheden, E Bernard, R Ritzenthaler, V Maffini-Alvaro, ...
2006 International Electron Devices Meeting, 1-4, 2006
Computer simulation of the microstructure and rheology of semi-solid alloys under shear
M Perez, JC Barbé, Z Neda, Y Bréchet, L Salvo
Acta materialia 48 (14), 3773-3782, 2000
Undulation of sub- porous dielectric structures: A mechanical analysis
M Darnon, T Chevolleau, O Joubert, S Maitrejean, JC Barbe, J Torres
Applied Physics Letters 91 (19), 194103, 2007
Hydrogen annealing of arrays of planar and vertically stacked Si nanowires
E Dornel, T Ernst, JC Barbé, JM Hartmann, V Delaye, F Aussenac, ...
Applied Physics Letters 91 (23), 233502, 2007
25nm Short and narrow strained FDSOI with TiN/HfO2 gate stack
F Andrieu, C Dupré, F Rochette, O Faynot, L Tosti, C Buj, E Rouchouze, ...
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 2006
Comparative scalability of PVD and CVD TiN on HfO2 as a metal gate stack for FDSOI cMOSFETs down to 25nm gate length and width
F Andrieu, O Faynot, X Garros, D Lafond, C Buj-Dufournet, L Tosti, ...
2006 International Electron Devices Meeting, 1-4, 2006
Impact of Mobility Boosters (XsSOI, CESL, TiN gate) on the Performance of< 100> or< 110> oriented FDSOI cMOSFETs for the 32nm Node
F Andrieu, O Faynot, F Rochette, JC Barbe, C Buj, Y Bogumilowicz, ...
2007 IEEE Symposium on VLSI Technology, 50-51, 2007
Leti-UTSOI2. 1: A compact model for UTBB-FDSOI technologies—Part I: Interface potentials analytical model
T Poiroux, O Rozeau, P Scheer, S Martinie, MA Jaud, M Minondo, A Juge, ...
IEEE Transactions on Electron Devices 62 (9), 2751-2759, 2015
Leti-UTSOI2. 1: A compact model for UTBB-FDSOI technologies—Part II: DC and AC model description
T Poiroux, O Rozeau, P Scheer, S Martinie, MA Jaud, M Minondo, A Juge, ...
IEEE Transactions on Electron Devices 62 (9), 2760-2768, 2015
UTSOI2: A complete physical compact model for UTBB and independent double gate MOSFETs
T Poiroux, O Rozeau, S Martinie, P Scheer, S Puget, MA Jaud, S El Ghouli, ...
2013 IEEE International Electron Devices Meeting, 12.4. 1-12.4. 4, 2013
Performance and design considerations for gate-all-around stacked-nanowires FETs
S Barraud, V Lapras, B Previtali, MP Samson, J Lacord, S Martinie, ...
2017 IEEE International Electron Devices Meeting (IEDM), 29.2. 1-29.2. 4, 2017
Extended Analysis of the -FET: Operation as Capacitorless eDRAM
C Navarro, J Lacord, MS Parihar, F Adamu-Lema, M Duan, N Rodriguez, ...
IEEE Transactions on Electron Devices 64 (11), 4486-4491, 2017
A review of the Z2-FET 1T-DRAM memory: Operation mechanisms and key parameters
S Cristoloveanu, KH Lee, MS Parihar, H El Dirani, J Lacord, S Martinie, ...
Solid-State Electronics 143, 10-19, 2018
Fluid system for two hydraulic circuits having a common source of pressurized fluid
DP Smith
US Patent 6,681,568, 2004
A novel electrostatic actuator for micro deformable mirrors: fabrication and test
C Divoux, J Charton, W Schwartz, E Stadler, J Margail, L Jocou, T Enot, ...
TRANSDUCERS'03. 12th International Conference on Solid-State Sensors …, 2003
Parasitic capacitance analytical model for sub-7-nm multigate devices
J Lacord, S Martinie, O Rozeau, MA Jaud, S Barraud, JC Barbé
IEEE Transactions on Electron Devices 63 (2), 781-786, 2015
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