Wenjun Li
Wenjun Li
Globalfoundries; University of Notre Dame
Verifierad e-postadress på alumni.nd.edu
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Polarization-engineered III-nitride heterojunction tunnel field-effect transistors
W Li, S Sharmin, H Ilatikhameneh, R Rahman, Y Lu, J Wang, X Yan, ...
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 1 …, 2015
822015
Breaking the efficiency barrier for ambient microwave power harvesting with heterojunction backward tunnel diodes
CHP Lorenz, S Hemour, W Li, Y Xie, J Gauthier, P Fay, K Wu
IEEE Transactions on Microwave Theory and Techniques 63 (12), 4544-4555, 2015
742015
GaN nanowire MOSFET with near-ideal subthreshold slope
W Li, MD Brubaker, BT Spann, KA Bertness, P Fay
IEEE electron device letters 39 (2), 184-187, 2017
312017
Polarization-induced Zener tunnel diodes in GaN/InGaN/GaN heterojunctions
X Yan, W Li, SM Islam, K Pourang, H Xing, P Fay, D Jena
Applied Physics Letters 107 (16), 163504, 2015
282015
Advanced terahertz sensing and imaging systems based on integrated III-V interband tunneling devices
L Liu, SM Rahman, Z Jiang, W Li, P Fay
Proceedings of the IEEE 105 (6), 1020-1034, 2017
242017
Steep subthreshold swing tunnel FETs: GaN/InN/GaN and transition metal dichalcogenide channels
A Seabaugh, S Fathipour, W Li, H Lu, JH Park, AC Kummel, D Jena, ...
2015 IEEE International Electron Devices Meeting (IEDM), 35.6. 1-35.6. 4, 2015
242015
Universal charge-conserving TFET SPICE model incorporating gate current and noise
H Lu, W Li, Y Lu, P Fay, T Ytterdal, A Seabaugh
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 2 …, 2016
222016
Overcoming the efficiency limitation of low microwave power harvesting with backward tunnel diodes
CHP Lorenz, S Hemour, W Li, Y Xie, J Gauthier, P Fay, K Wu
2015 IEEE MTT-S International Microwave Symposium, 1-4, 2015
152015
Metal-organic chemical vapor deposition of high quality, high indium composition N-polar InGaN layers for tunnel devices
C Lund, B Romanczyk, M Catalano, Q Wang, W Li, D DiGiovanni, MJ Kim, ...
Journal of Applied Physics 121 (18), 185707, 2017
142017
Direct electrical observation of plasma wave-related effects in GaN-based two-dimensional electron gases
Y Zhao, W Chen, W Li, M Zhu, Y Yue, B Song, J Encomendero, ...
Applied Physics Letters 105 (17), 173508, 2014
132014
Performance projection of III‐nitride heterojunction nanowire tunneling field‐effect transistors
W Li, L Cao, C Lund, S Keller, P Fay
physica status solidi (a) 213 (4), 905-908, 2016
102016
Group III-nitride compound heterojunction tunnel field-effect transistors and methods for making the same
P Fay, W Li, D Jena
US Patent 9,905,647, 2018
92018
Tunnel FET analog benchmarking and circuit design
H Lu, P Paletti, W Li, P Fay, T Ytterdal, A Seabaugh
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 4 …, 2018
82018
Faceted sidewall etching of n-GaN on sapphire by photoelectrochemical wet processing
Y Yue, X Yan, W Li, HG Xing, D Jena, P Fay
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2014
82014
Microwave detection performance of In0.53Ga0.47As/GaAs0.5Sb0.5 quantum‐well tunnel field‐effect transistors
W Li, P Fay, T Yu, J Hoyt
Electronics Letters 52 (10), 842-844, 2016
72016
Novel III-N heterostructure devices for low-power logic and more
P Fay, W Li, L Cao, K Pourang, SM Islam, C Lund, S Saima, ...
2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO), 767-769, 2016
62016
Group III-Nitride compound heterojunction tunnel field-effect transistors and methods for making the same
P Fay, L Cao, D Jena, W Li
US Patent 9,954,085, 2018
32018
Quantum band engineering of nitride semiconductors for infrared lasers
O Malis, C Edmunds, D Li, J Shao, G Gardner, W Li, P Fay, MJ Manfra
Novel In-Plane Semiconductor Lasers XIII 9002, 90021D, 2014
32014
InGaAs/GaAsSb interband tunneling FETs as tunable RF detectors
W Li, T Yu, J Hoyt, P Fay
72nd Device Research Conference, 21-22, 2014
22014
Hybrid low-k spacer scheme for advanced FinFET technology parasitic capacitance reduction
M Gu, X Wang, W Li, M Aquilino, J Peng, H Wang, D Jaeger, K Tabakman, ...
Electronics Letters 56 (10), 514-516, 2020
12020
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