| Synthesis and characterisation of Gd2O3 nanocrystals functionalised by organic acids F Söderlind, H Pedersen, RM Petoral Jr, PO Käll, K Uvdal Journal of colloid and interface science 288 (1), 140-148, 2005 | 271 | 2005 |
| IR and quantum-chemical studies of carboxylic acid and glycine adsorption on rutile TiO2 nanoparticles L Ojamäe, C Aulin, H Pedersen, PO Käll Journal of colloid and interface science 296 (1), 71-78, 2006 | 262 | 2006 |
| High proton relaxivity for gadolinium oxide nanoparticles M Engström, A Klasson, H Pedersen, C Vahlberg, PO Käll, K Uvdal Magnetic Resonance Materials in Physics, Biology and Medicine 19, 180-186, 2006 | 162 | 2006 |
| Chloride-based CVD growth of silicon carbide for electronic applications H Pedersen, S Leone, O Kordina, A Henry, S Nishizawa, Y Koshka, ... Chemical reviews 112 (4), 2434-2453, 2012 | 129 | 2012 |
| Very high growth rate of 4H-SiC epilayers using the chlorinated precursor methyltrichlorosilane (MTS) H Pedersen, S Leone, A Henry, FC Beyer, V Darakchieva, E Janzén Journal of crystal growth 307 (2), 334-340, 2007 | 116 | 2007 |
| Studying chemical vapor deposition processes with theoretical chemistry H Pedersen, SD Elliott Theoretical Chemistry Accounts 133, 1-10, 2014 | 97 | 2014 |
| Growth of high quality epitaxial rhombohedral boron nitride M Chubarov, H Pedersen, H Högberg, J Jensen, A Henry Crystal growth & design 12 (6), 3215-3220, 2012 | 81 | 2012 |
| Improved morphology for epitaxial growth on 4 off-axis 4H-SiC substrates S Leone, H Pedersen, A Henry, O Kordina, E Janzén Journal of Crystal Growth 311 (12), 3265-3272, 2009 | 63 | 2009 |
| Epitaxial CVD growth of sp2‐hybridized boron nitride using aluminum nitride as buffer layer M Chubarov, H Pedersen, H Högberg, V Darakchieva, J Jensen, ... physica status solidi (RRL)–Rapid Research Letters 5 (10‐11), 397-399, 2011 | 60 | 2011 |
| Precursors for carbon doping of GaN in chemical vapor deposition X Li, Ö Danielsson, H Pedersen, E Janzén, U Forsberg Journal of Vacuum Science & Technology B 33 (2), 2015 | 50 | 2015 |
| Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results X Li, J Bergsten, D Nilsson, Ö Danielsson, H Pedersen, N Rorsman, ... Applied Physics Letters 107 (26), 2015 | 48 | 2015 |
| Thick homoepitaxial layers grown on on-axis Si-face 6H-and 4H-SiC substrates with HCl addition S Leone, H Pedersen, A Henry, O Kordina, E Janzén Journal of crystal growth 312 (1), 24-32, 2009 | 48 | 2009 |
| Boron nitride: A new photonic material M Chubarov, H Pedersen, H Högberg, S Filippov, JAA Engelbrecht, ... Physica B: Condensed Matter 439, 29-34, 2014 | 45 | 2014 |
| Chemical vapour deposition of epitaxial rhombohedral BN thin films on SiC substrates M Chubarov, H Pedersen, H Högberg, Z Czigany, A Henry CrystEngComm 16 (24), 5430-5436, 2014 | 44 | 2014 |
| Atomic layer deposition of InN using trimethylindium and ammonia plasma P Deminskyi, P Rouf, IG Ivanov, H Pedersen Journal of Vacuum Science & Technology A 37 (2), 2019 | 40 | 2019 |
| Growth characteristics of chloride‐based SiC epitaxial growth H Pedersen, S Leone, A Henry, A Lundskog, E Janzén physica status solidi (RRL)–Rapid Research Letters 2 (6), 278-280, 2008 | 39 | 2008 |
| Surface interactions between Y2O3 nanocrystals and organic molecules—an experimental and quantum-chemical study H Pedersen, F Söderlind, RM Petoral Jr, K Uvdal, PO Käll, L Ojamäe Surface science 592 (1-3), 124-140, 2005 | 39 | 2005 |
| Challenge in determining the crystal structure of epitaxial 0001 oriented sp2-BN films M Chubarov, H Högberg, A Henry, H Pedersen Journal of Vacuum Science & Technology A 36 (3), 2018 | 38 | 2018 |
| Very high crystalline quality of thick 4H‐SiC epilayers grown from methyltrichlorosilane (MTS) H Pedersen, S Leone, A Henry, V Darakchieva, P Carlsson, A Gällström, ... physica status solidi (RRL)–Rapid Research Letters 2 (4), 188-190, 2008 | 36 | 2008 |
| In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition NJ O’Brien, P Rouf, R Samii, K Ronnby, SC Buttera, CW Hsu, IG Ivanov, ... Chemistry of Materials 32 (11), 4481-4489, 2020 | 35 | 2020 |
Hans HögbergLektor Linköpings universitetVerified email at liu.se
