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R.Ramesh
R.Ramesh
Verified email at ece.sastra.edu
Title
Cited by
Cited by
Year
Numerical modeling of triple material gate stack gate all-around (TMGSGAA) MOSFET considering quantum mechanical effects
B Padmanaban, R Ramesh, D Nirmal, S Sathiyamoorthy
Superlattices and Microstructures 82, 40-54, 2015
362015
Effect of interface trap charges on the performance of asymmetric dielectric modulated dual short gate tunnel FET
A Pon, KSVP Tulasi, R Ramesh
AEU-International Journal of Electronics and Communications 102, 1-8, 2019
272019
A critical review of AlGaN/GaN-heterostructure based Schottky diode/HEMT hydrogen (H2) sensors for aerospace and industrial applications
J Ajayan, D Nirmal, R Ramesh, S Bhattacharya, S Tayal, LMIL Joseph, ...
Measurement 186, 110100, 2021
252021
Influence of gate and channel engineering on multigate MOSFETs-A review
R Ramesh
Microelectronics Journal 66, 136-154, 2017
242017
Self-consistent 3-D numerical modeling of a uniformly doped nanoscale FinFET using interpolating wavelets
R Ramesh, M Madheswaran, K Kannan
Journal of computational electronics 10, 331-340, 2011
142011
Performance analysis of asymmetric dielectric modulated dual short gate tunnel field effect transistor
A Pon, AS Carmel, A Bhattacharyya, R Ramesh
Superlattices and Microstructures 113, 608-615, 2018
132018
Optical effects on the characteristics of a nanoscale FinFET
R Ramesh, M Madheswaran, K Kannan
Progress In Electromagnetics Research B 21, 235-255, 2010
132010
Analysis of black phosphorus double gate MOSFET using hybrid method for analogue/RF application
R Rathinam, A Pon, S Carmel, A Bhattacharyya
IET Circuits, Devices & Systems 14 (8), 1167-1172, 2020
102020
Nanoscale FinFET sensor for determining the breast cancer tissues using wavelet coefficients
R Ramesh, M Madheswaran, K Kannan
Journal of Mechanics in Medicine and Biology 11 (05), 1295-1314, 2011
92011
Bandgap scaling and negative differential resistance behavior of zigzag phosphorene antidot nanoribbons (ZPANRs)
S Carmel, A Pon, N Meenakshisundaram, R Ramesh, A Bhattacharyya
Physical Chemistry Chemical Physics 20 (21), 14855-14863, 2018
62018
Optimization of the geometry of a charge plasma double-gate junctionless transistor for improved RF stability
A Pon, A Bhattacharyya, B Padmanaban, R Ramesh
Journal of Computational Electronics 18, 906-917, 2019
52019
Charge plasma-based phosphorene tunnel FET using a hybrid computational method
A Pon, A Bhattacharyya, R Ramesh
Journal of Electronic Materials 50, 3624-3633, 2021
42021
Insights on Si doping on PNRs for NDR with high PVR and diode behaviour with a high rectification ratio
S Carmel, A Pon, R Ramesh, A Bhattacharyya
Physica E: Low-dimensional Systems and Nanostructures 114, 113630, 2019
42019
Optical effects on the characteristics of GaAs nanoscale FinFET with vertical Gaussian doping profile
R Ramesh, M Madheswaran, K Kannan
Optik 124 (19), 4019-4025, 2013
42013
Physical noise model of a uniformly doped nanoscale FinFET photodetector
R Ramesh, M Madheswaran, K Kannan
Optik 123 (12), 1087-1094, 2012
42012
Optimization of gate all-around junctionless transistor using response surface methodology
R Ramesh, A Pon, PD Babu, S Carmel, A Bhattacharyya
Silicon, 1-10, 2022
32022
Channel and gate engineered dielectric modulated asymmetric dual short gate TFET
R Ramesh, A Pon, S Carmel, A Bhattacharyya
2017 International conference on Microelectronic Devices, Circuits and …, 2017
32017
Nanoscale circuit implementation using tri-metal gate engineered nanowire MOSFET with gate stack for analog/RF applications
A Bhattacharyya, R Ramesh
Journal of Computational Electronics 16, 155-161, 2017
32017
Numerical modeling on the optical characteristics of triple material gate stack gate all-around (TMGSGAA) MOSFET
R Ramesh, M Madheswaran, K Kannan
Superlattices and Microstructures 85, 418-432, 2015
32015
3-D numerical modeling and simulation of nanoscale FinFET for the application in ULSI circuits
R Ramesh, M Madheswaran, K Kannan
Physica E: Low-dimensional Systems and Nanostructures 44 (1), 80-86, 2011
32011
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Articles 1–20