Nicolas Chauvin
Nicolas Chauvin
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Enhanced spontaneous emission from quantum dots in short photonic crystal waveguides
T Ba Hoang, J Beetz, L Midolo, M Skacel, M Lermer, M Kamp, S Höfling, ...
Applied Physics Letters 100 (6), 061122, 2012
Controlling the charge environment of single quantum dots in a photonic-crystal cavity
N Chauvin, C Zinoni, M Francardi, A Gerardino, L Balet, B Alloing, LH Li, ...
Physical Review B 80 (24), 241306, 2009
Single-photon detection system for quantum optics applications
A Korneev, Y Vachtomin, O Minaeva, A Divochiy, K Smirnov, O Okunev, ...
Selected Topics in Quantum Electronics, IEEE Journal of 13 (4), 944-951, 2007
Low defect InGaAs quantum well selectively grown by metal organic chemical vapor deposition on Si (100) 300 mm wafers for next generation non planar devices
R Cipro, T Baron, M Martin, J Moeyaert, S David, V Gorbenko, F Bassani, ...
Applied Physics Letters 104 (26), 262103, 2014
Enhanced spontaneous emission rate from single InAs quantum dots in a photonic crystal nanocavity at telecom wavelengths
L Balet, M Francardi, A Gerardino, N Chauvin, B Alloing, C Zinoni, ...
Applied Physics Letters 91 (12), 123115, 2007
Enhanced spontaneous emission in a photonic-crystal light-emitting diode
M Francardi, L Balet, A Gerardino, N Chauvin, D Bitauld, LH Li, B Alloing, ...
Applied Physics Letters 93 (14), 143102-143102-3, 2008
Excitonic properties of wurtzite InP nanowires grown on silicon substrate
MHH Alouane, N Chauvin, H Khmissi, K Naji, B Ilahi, H Maaref, ...
Nanotechnology 24 (3), 035704, 2013
Growth-interruption-induced low-density InAs quantum dots on GaAs
LH Li, N Chauvin, G Patriarche, B Alloing, A Fiore
Journal of Applied Physics 104 (8), 083508, 2008
Shape-engineered epitaxial InGaAs quantum rods for laser applications
LH Li, P Ridha, G Patriarche, N Chauvin, A Fiore
Applied Physics Letters 92 (12), 121102, 2008
Size and shape effects on excitons and biexcitons in single InAs∕ InP quantum dots
N Chauvin, B Salem, G Bremond, G Guillot, C Bru-Chevallier, M Gendry
Journal of applied physics 100 (7), 073702, 2006
Wurtzite InP/InAs/InP core–shell nanowires emitting at telecommunication wavelengths on Si substrate
MHH Alouane, R Anufriev, N Chauvin, H Khmissi, K Naji, B Ilahi, H Maaref, ...
Nanotechnology 22 (40), 405702, 2011
In-situ passivation of GaAsP nanowires
C Himwas, S Collin, P Rale, N Chauvin, G Patriarche, F Oehler, F Julien, ...
Nanotechnology 28, 495707, 2017
Microphotoluminescence of exciton and biexciton around from a single quantum dot
G Saint-Girons, N Chauvin, A Michon, G Patriarche, G Beaudoin, ...
Applied physics letters 88 (13), 133101, 2006
InAs/InP nanowires grown by catalyst assisted molecular beam epitaxy on silicon substrates
H Khmissi, K Naji, MHH Alouane, N Chauvin, C Bru-Chevallier, B Ilahi, ...
Journal of Crystal Growth 344 (1), 45-50, 2012
Growth temperature dependence of exciton lifetime in wurtzite InP nanowires grown on silicon substrates
N Chauvin, MH Hadj Alouane, R Anufriev, H Khmissi, K Naji, G Patriarche, ...
Applied Physics Letters 100 (1), 011906, 2012
Low density of self-assembled InAs quantum dots grown by solid-source molecular beam epitaxy on InP (001)
E Dupuy, P Regreny, Y Robach, M Gendry, N Chauvin, E Tranvouez, ...
Applied Physics Letters 89 (12), 123112-123112-3, 2006
Controlling the aspect ratio of quantum dots: from columnar dots to quantum rods
L Li, G Patriarche, N Chauvin, P Ridha, M Rossetti, J Andrzejewski, G Sek, ...
IEEE Journal of Selected Topics in Quantum Electronics 14 (4), 1204-1213, 2008
Control of the spontaneous emission from a single quantum dash using a slow-light mode in a two-dimensional photonic crystal on a Bragg reflector
N Chauvin, P Nedel, C Seassal, BB Bakir, X Letartre, M Gendry, A Fiore, ...
Physical Review B 80 (4), 045315, 2009
Pressure-Dependent Photoluminescence Study of Wurtzite InP Nanowires
N Chauvin, A Mavel, G Patriarche, B Masenelli, M Gendry, D Machon
Nano Letters 16 (5), 2926-2930, 2016
Nanoscale investigation of a radial p–n junction in self-catalyzed GaAs nanowires grown on Si (111)
V Piazza, M Vettori, AA Ahmed, P Lavenus, F Bayle, N Chauvin, FH Julien, ...
Nanoscale 10 (43), 20207-20217, 2018
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