| Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces R Engel-Herbert, Y Hwang, S Stemmer Journal of applied physics 108 (12), 2010 | 485 | 2010 |
| High density individually addressable nanowire arrays record intracellular activity from primary rodent and human stem cell derived neurons R Liu, R Chen, AT Elthakeb, SH Lee, S Hinckley, ML Khraiche, J Scott, ... Nano letters 17 (5), 2757-2764, 2017 | 171 | 2017 |
| Analysis of trap state densities at HfO2/In0. 53Ga0. 47As interfaces Y Hwang, R Engel-Herbert, NG Rudawski, S Stemmer Applied Physics Letters 96 (10), 2010 | 87 | 2010 |
| Quantification of trap densities at dielectric/III–V semiconductor interfaces R Engel-Herbert, Y Hwang, S Stemmer Applied Physics Letters 97 (6), 2010 | 65 | 2010 |
| Effect of postdeposition anneals on the Fermi level response of HfO2/In0. 53Ga0. 47As gate stacks Y Hwang, R Engel-Herbert, NG Rudawski, S Stemmer Journal of Applied Physics 108 (3), 2010 | 57 | 2010 |
| Metal-oxide-semiconductor capacitors with ZrO2 dielectrics grown on In0. 53Ga0. 47As by chemical beam deposition R Engel-Herbert, Y Hwang, J Cagnon, S Stemmer Applied Physics Letters 95 (6), 2009 | 55 | 2009 |
| Influence of gate metallization processes on the electrical characteristics of high-k/In0. 53Ga0. 47As interfaces GJ Burek, Y Hwang, AD Carter, V Chobpattana, JJM Law, WJ Mitchell, ... Journal of Vacuum Science & Technology B 29 (4), 2011 | 51 | 2011 |
| Influence of trimethylaluminum on the growth and properties of HfO2/In0. 53Ga0. 47As interfaces Y Hwang, R Engel-Herbert, S Stemmer Applied Physics Letters 98 (5), 2011 | 32 | 2011 |
| Al-doped HfO2/In0. 53Ga0. 47As metal-oxide-semiconductor capacitors Y Hwang, V Chobpattana, JY Zhang, JM LeBeau, R Engel-Herbert, ... Applied Physics Letters 98 (14), 2011 | 31 | 2011 |
| Novel heterogeneous integration technology of III–V layers and InGaAs finFETs to silicon X Dai, BM Nguyen, Y Hwang, C Soci, SA Dayeh Advanced Functional Materials 24 (28), 4420-4426, 2014 | 28 | 2014 |
| Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing Y Hwang, BM Nguyen, SA Dayeh Applied Physics Letters 103 (26), 2013 | 20 | 2013 |
| Technology development & design for 22 nm InGaAs/InP-channel MOSFETs MJW Rodwell, M Wistey, U Singisetti, G Burek, A Gossard, S Stemmer, ... 2008 20th International Conference on Indium Phosphide and Related Materials …, 2008 | 15 | 2008 |
| Metal-oxide-semiconductor capacitors with erbium oxide dielectrics on In0. 53Ga0. 47As channels Y Hwang, MA Wistey, J Cagnon, R Engel-Herbert, S Stemmer Applied Physics Letters 94 (12), 2009 | 12 | 2009 |
| Nanoscale Heterogeneous Reactions and Interfaces in Ge/Si and for III-V on Si Integrated Devices S Dayeh, W Tang, BM Nguyen, X Dai, Y Liu, Y Hwang, XH Liu, R Chen ECS Transactions 58 (7), 115, 2013 | 5 | 2013 |
| Chemical beam deposition of high-k gate dielectrics on III-V semiconductors: TiO2 on In0. 53Ga0. 47As R Engel-Herbert, Y Hwang, J LeBeau, Y Zheng, S Stemmer MRS Online Proceedings Library (OPL) 1155, 1155-C13-02, 2009 | 4 | 2009 |
| Addressable vertical nanowire probe arrays and fabrication methods A Shadi, R Chen, SH Lee, R Liu, YG Ro, A Tanaka, Y Hwang US Patent 11,363,979, 2022 | 2 | 2022 |
| Correct determination of trap densities at high-k/III-V interfaces R Engel-Herbert, Y Hwang, V Chobpattana, S Stemmer Proceedings of the CS MANTECH Conference, New Orleans, LA, USA, 13-16, 2013 | 1 | 2013 |
| Fermi-level unpinning of HfO2/In0. 53Ga0. 47As gate stack using hydrogen anneals Y Hwang, R Engel-Herbert, N Rudawski, S Stemmer ECS Transactions 33 (3), 117, 2010 | 1 | 2010 |
| Analysis of trap state densities at HfO {sub 2}/In {sub 0.53} Ga {sub 0.47} As interfaces Y Hwang, R Engel-Herbert, NG Rudawski, S Stemmer Applied Physics Letters 96 (10), 2010 | 1 | 2010 |
| Nanoscale Heterogeneous Reactions and Interfaces in Ge/Si and for III-V On Si Integrated Devices BM Nguyen, X Dai, W Tang, Y Liu, Y Hwang, R Chen, S Dayeh ECS Meeting Abstracts, 2151, 2013 | | 2013 |
