Ran Yan (Ruby)
Ran Yan (Ruby)
Verified email at globalfoundries.com - Homepage
Title
Cited by
Cited by
Year
Nanowire transistors without junctions
JP Colinge, CW Lee, A Afzalian, ND Akhavan, R Yan, I Ferain, P Razavi, ...
Nature nanotechnology 5 (3), 225, 2010
20642010
Junctionless multigate field-effect transistor
CW Lee, A Afzalian, ND Akhavan, R Yan, I Ferain, JP Colinge
Applied Physics Letters 94 (5), 053511, 2009
9472009
Junctionless nanowire transistor (JNT): properties and design guidelines
A Kranti, R Yan, CW Lee, I Ferain, R Yu, ND Akhavan, P Razavi, ...
Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the …, 2010
523*2010
Performance estimation of junctionless multigate transistors
CW Lee, I Ferain, A Afzalian, R Yan, ND Akhavan, P Razavi, JP Colinge
Solid-State Electronics 54 (2), 97-103, 2010
5042010
High-temperature performance of silicon junctionless MOSFETs
CW Lee, A Borne, I Ferain, A Afzalian, R Yan, N Dehdashti Akhavan, ...
Electron Devices, IEEE Transactions on 57 (3), 620-625, 2010
3482010
Reduced electric field in junctionless transistors
JP Colinge, CW Lee, I Ferain, ND Akhavan, R Yan, P Razavi, R Yu, ...
Applied Physics Letters 96 (7), 073510, 2010
2982010
Low subthreshold slope in junctionless multigate transistors
CW Lee, AN Nazarov, I Ferain, ND Akhavan, R Yan, P Razavi, R Yu, ...
Applied Physics Letters 96 (10), 102106, 2010
2392010
Junctionless multiple-gate transistors for analog applications
RT Doria, MA Pavanello, RD Trevisoli, M de Souza, CW Lee, I Ferain, ...
IEEE transactions on electron devices 58 (8), 2511-2519, 2011
2222011
SOI gated resistor: CMOS without junctions
JP Colinge, CW Lee, A Afzalian, N Dehdashti, R Yan, I Ferain, P Razavi, ...
2009 IEEE International SOI Conference, 1-2, 2009
1462009
Junctionless transistors: physics and properties
JP Colinge, CW Lee, ND Akhavan, R Yan, I Ferain, P Razavi, A Kranti, ...
Semiconductor-On-Insulator Materials for Nanoelectronics Applications, 187-200, 2011
872011
Mobility improvement in nanowire junctionless transistors by uniaxial strain
JP Raskin, JP Colinge, I Ferain, A Kranti, CW Lee, ND Akhavan, R Yan, ...
Applied Physics Letters 97 (4), 042114, 2010
572010
Junctionless 6T SRAM cell
A Kranti, CW Lee, I Ferain, R Yan, N Akhavan, P Razavi, R Yu, ...
Electronics letters 46 (22), 1491-1493, 2010
522010
Junctionless nanowire transistor: complementary metal-oxide-semiconductor without junctions
JP Colinge, I Ferain, A Kranti, CW Lee, ND Akhavan, P Razavi, R Yan, ...
Science of Advanced Materials 3 (3), 477-482, 2011
472011
Short-channel junctionless nanowire transistors
CW Lee, I Ferain, A Kranti, ND Akhavan, P Razavi, R Yan, R Yu, B O’Neill, ...
Proc. SSDM, 1044-1045, 2010
412010
A new F (ast)-CMS NEGF algorithm for efficient 3D simulations of switching characteristics enhancement in constricted tunnel barrier silicon nanowire MuGFETs
A Afzalian, ND Akhavan, CW Lee, R Yan, I Ferain, P Razavi, JP Colinge
Journal of computational electronics 8 (3-4), 287, 2009
402009
Sensitivity of trigate MOSFETs to random dopant induced threshold voltage fluctuations
R Yan, D Lynch, T Cayron, D Lederer, A Afzalian, CW Lee, N Dehdashti, ...
Solid-State Electronics 52 (12), 1872-1876, 2008
392008
Ultra-scaled Z-RAM cell
S Okhonin, M Nagoga, CW Lee, JP Colinge, A Afzalian, R Yan, ...
2008 IEEE International SOI Conference, 157-158, 2008
352008
Investigation of high-performance sub-50nm junctionless nanowire transistors
R Yan, A Kranti, I Ferain, CW Lee, R Yu, N Dehdashti, P Razavi, ...
Microelectronics Reliability 51 (7), 1166-1171, 2011
332011
A Simulation comparison between junctionless and inversion-mode MuGFETs
JP Colinge, A Kranti, R Yan, I Ferain, ND Akhavan, P Razavi, CW Lee, ...
ECS Transactions 35 (5), 63-72, 2011
312011
Properties of accumulation-mode multi-gate field-effect transistors
JP Colinge, D Lederer, A Afzalian, R Yan, CW Lee, ND Akhavan, W Xiong
Japanese Journal of Applied Physics 48 (3R), 034502, 2009
242009
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