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Zhongyunshen Zhu
Zhongyunshen Zhu
Other names朱忠赟珅
Department of Electrical and Information Technology, LTH, Lund University
Verified email at eit.lth.se
Title
Cited by
Cited by
Year
Bi2Te3 photoconductive detectors on Si
J Liu, Y Li, Y Song, Y Ma, Q Chen, Z Zhu, P Lu, S Wang
Applied Physics Letters 110 (14), 2017
512017
Ferroelectric enhanced performance of a GeSn/Ge dual-nanowire photodetector
Y Yang, X Wang, C Wang, Y Song, M Zhang, Z Xue, S Wang, Z Zhu, G Liu, ...
Nano letters 20 (5), 3872-3879, 2020
392020
Effect of thermal annealing on structural properties of GeSn thin films grown by molecular beam epitaxy
ZP Zhang, YX Song, YY Li, XY Wu, ZYS Zhu, Y Han, LY Zhang, H Huang, ...
AIP Advances 7 (10), 2017
162017
Structural properties of GeSn thin films grown by molecular beam epitaxy
ZP Zhang, YX Song, ZYS Zhu, Y Han, QM Chen, YY Li, LY Zhang, ...
AIP Advances 7 (4), 2017
162017
Compressively-strained GaSb nanowires with core-shell heterostructures
Z Zhu, J Svensson, AR Persson, R Wallenberg, AV Gromov, ...
Nano Research 13, 2517-2524, 2020
142020
Analysis of Raman scattering from inclined GeSn/Ge dual-nanowire heterostructure on Ge (1 1 1) substrate
D Han, H Ye, Y Song, Z Zhu, Y Yang, Z Yu, Y Liu, S Wang, Z Di
Applied Surface Science 463, 581-586, 2019
142019
Tuning of source material for InAs/InGaAsSb/GaSb application-specific vertical nanowire tunnel FETs
A Krishnaraja, J Svensson, E Memisevic, Z Zhu, AR Persson, E Lind, ...
ACS Applied Electronic Materials 2 (9), 2882-2887, 2020
122020
Vapor-solid-solid grown Ge nanowires at integrated circuit compatible temperature by molecular beam epitaxy
Z Zhu, Y Song, Z Zhang, H Sun, Y Han, Y Li, L Zhang, Z Xue, Z Di, ...
Journal of Applied Physics 122 (9), 2017
12*2017
Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction
D Dzhigaev, J Svensson, A Krishnaraja, Z Zhu, Z Ren, Y Liu, S Kalbfleisch, ...
Nanoscale 12 (27), 14487-14493, 2020
102020
Improved electrostatics through digital etch schemes in vertical GaSb nanowire p-MOSFETs on Si
Z Zhu, A Jonsson, YP Liu, J Svensson, R Timm, LE Wernersson
ACS Applied Electronic Materials 4 (1), 531-538, 2022
92022
Growth mode of tensile-strained Ge quantum dots grown by molecular beam epitaxy
ZP Zhang, YX Song, QM Chen, XY Wu, ZYS Zhu, LY Zhang, YY Li, ...
Journal of Physics D: Applied Physics 50 (46), 465301, 2017
92017
Integration of Ferroelectric HfxZr1-xO2 on Vertical III-V Nanowire Gate-All-Around FETs on Silicon
AEO Persson, Z Zhu, R Athle, LE Wernersson
IEEE Electron Device Letters 43 (6), 854-857, 2022
82022
Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor
Z Zhu, AEO Persson, LE Wernersson
Nature Communications 14 (1), 2530, 2023
62023
Performance enhancement of GaSb vertical nanowire p-type MOSFETs on Si by rapid thermal annealing
Z Zhu, J Svensson, A Jönsson, LE Wernersson
Nanotechnology 33 (7), 075202, 2021
62021
Abnormal strain in suspended GeSn microstructures
Y Han, Y Song, X Chen, Z Zhang, J Liu, Y Li, Z Zhu, H Huang, J Shao, ...
Materials Research Express 5 (3), 035901, 2018
62018
A comparative study of selective dry and wet etching of germanium–tin (Ge1− xSnx) on germanium
Y Han, Y Li, Y Song, C Chi, Z Zhang, J Liu, Z Zhu, S Wang
Semiconductor Science and Technology 33 (8), 085011, 2018
52018
InPBi quantum dots for super-luminescence diodes
L Zhang, Y Song, Q Chen, Z Zhu, S Wang
Nanomaterials 8 (9), 705, 2018
42018
GeSn/Ge dual-nanowire heterostructure
Z Zhu, Y Song, Y Han, Y Li, Z Zhang, L Zhang, S Wang
2017 IEEE Photonics Society Summer Topical Meeting Series (SUM), 71-72, 2017
42017
Sensing single domains and individual defects in scaled ferroelectrics
Z Zhu, AEO Persson, LE Wernersson
Science Advances 9 (5), eade7098, 2023
32023
Theoretical Investigation of Biaxially Tensile-Strained Germanium Nanowires
Z Zhu, Y Song, Q Chen, Z Zhang, L Zhang, Y Li, S Wang
Nanoscale Research Letters 12, 1-8, 2017
32017
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Articles 1–20