| Systematic DC/AC performance benchmarking of sub-7-nm node FinFETs and nanosheet FETs JS Yoon, J Jeong, S Lee, RH Baek IEEE Journal of the Electron Devices Society 6, 942-947, 2018 | 63 | 2018 |
| Multi- Strategies of 7-nm node Nanosheet FETs With Limited Nanosheet Spacing JS Yoon, J Jeong, S Lee, RH Baek IEEE Journal of the Electron Devices Society 6, 861-865, 2018 | 56 | 2018 |
| Comprehensive analysis of source and drain recess depth variations on silicon nanosheet FETs for sub 5-nm node SoC application J Jeong, JS Yoon, S Lee, RH Baek IEEE Access 8, 35873-35881, 2020 | 36 | 2020 |
| Reduction of process variations for sub-5-nm node fin and nanosheet FETs using novel process scheme JS Yoon, S Lee, J Lee, J Jeong, H Yun, RH Baek IEEE Transactions on Electron Devices 67 (7), 2732-2737, 2020 | 31 | 2020 |
| Sensitivity of source/drain critical dimension variations for sub-5-nm node fin and nanosheet FETs JS Yoon, J Jeong, S Lee, RH Baek IEEE Transactions on Electron Devices 67 (1), 258-262, 2019 | 29 | 2019 |
| Optimization of nanosheet number and width of multi-stacked nanosheet FETs for sub-7-nm node system on chip applications JS Yoon, J Jeong, S Lee, RH Baek Japanese Journal of Applied Physics 58 (SB), SBBA12, 2019 | 29 | 2019 |
| Bottom oxide bulk FinFETs without punch-through-stopper for extending toward 5-nm node JS Yoon, J Jeong, S Lee, RH Baek IEEE Access 7, 75762-75767, 2019 | 28 | 2019 |
| Punch-through-stopper free nanosheet FETs with crescent inner-spacer and isolated source/drain JS Yoon, J Jeong, S Lee, RH Baek IEEE Access 7, 38593-38596, 2019 | 28 | 2019 |
| Metal source-/drain-induced performance boosting of sub-7-nm node nanosheet FETs JS Yoon, J Jeong, S Lee, RH Baek IEEE Transactions on Electron Devices 66 (4), 1868-1873, 2019 | 23 | 2019 |
| Digital/analog performance optimization of vertical nanowire FETs using machine learning JS Yoon, S Lee, H Yun, RH Baek IEEE Access 9, 29071-29077, 2021 | 19 | 2021 |
| Neural network based design optimization of 14-nm node fully-depleted SOI FET for SoC and 3DIC applications H Yun, JS Yoon, J Jeong, S Lee, HC Choi, RH Baek IEEE Journal of the Electron Devices Society 8, 1272-1280, 2020 | 16 | 2020 |
| Source/drain patterning FinFETs as solution for physical area scaling toward 5-nm node JS Yoon, S Lee, J Lee, J Jeong, H Yun, B Kang, RH Baek IEEE Access 7, 172290-172295, 2019 | 15 | 2019 |
| Performance, power, and area of standard cells in sub 3 nm node using buried power rail JS Yoon, J Jeong, S Lee, J Lee, S Lee, RH Baek, SK Lim IEEE Transactions on Electron Devices 69 (3), 894-899, 2022 | 14 | 2022 |
| Novel trench inner-spacer scheme to eliminate parasitic bottom transistors in silicon nanosheet FETs J Jeong, JS Yoon, S Lee, RH Baek IEEE Transactions on Electron Devices 70 (2), 396-401, 2022 | 8 | 2022 |
| TCAD-based flexible fin pitch design for 3-nm node 6T-SRAM using practical source/drain patterning scheme J Lee, JS Yoon, S Lee, J Jeong, RH Baek IEEE Transactions on Electron Devices 68 (3), 1031-1036, 2021 | 8 | 2021 |
| Sensitivity of inner spacer thickness variations for sub-3-nm node silicon nanosheet field-effect transistors S Lee, J Jeong, JS Yoon, S Lee, J Lee, J Lim, RH Baek Nanomaterials 12 (19), 3349, 2022 | 7 | 2022 |
| DC performance variations by grain boundary in source/drain epitaxy of sub-3-nm nanosheet field-effect transistors JS Yoon, J Jeong, S Lee, J Lee, S Lee, J Lim, RH Baek IEEE Access 10, 22032-22037, 2022 | 6 | 2022 |
| Threshold Voltage Variations Induced by Si1− x Ge x and Si1− x Cx of Sub 5-nm Node Silicon Nanosheet Field-Effect Transistors J Jeong, JS Yoon, S Lee, RH Baek Journal of Nanoscience and Nanotechnology 20 (8), 4684-4689, 2020 | 6 | 2020 |
| Observation of mobility and velocity behaviors in ultra-scaled LG= 15 nm silicon nanowire field-effect transistors with different channel diameters S Lee, JS Yoon, J Jeong, J Lee, RH Baek Solid-State Electronics 164, 107740, 2020 | 5 | 2020 |
| Gate-All-Around FETs: nanowire and nanosheet structure JS Yoon, J Jeong, S Lee, J Lee, RH Baek Nanowires-recent progress, 2021 | 4 | 2021 |
