Anders Gustafsson
Anders Gustafsson
Professor of Solid state physics
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Cited by
Cited by
Epitaxial III− V nanowires on silicon
T Mårtensson, CPT Svensson, BA Wacaser, MW Larsson, W Seifert, ...
Nano letters 4 (10), 1987-1990, 2004
Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures
D Spirkoska, J Arbiol, A Gustafsson, S Conesa-Boj, F Glas, I Zardo, ...
Physical Review B 80 (24), 245325, 2009
Self-assembled quantum dots in a nanowire system for quantum photonics
M Heiss, Y Fontana, A Gustafsson, G Wüst, C Magen, DD O’regan, ...
Nature materials 12 (5), 439-444, 2013
Spatially resolved Hall effect measurement in a single semiconductor nanowire
K Storm, F Halvardsson, M Heurlin, D Lindgren, A Gustafsson, PM Wu, ...
Nature nanotechnology 7 (11), 718-722, 2012
Local probe techniques for luminescence studies of low-dimensional semiconductor structures
A Gustafsson, ME Pistol, L Montelius, L Samuelson
Journal of Applied Physics 84 (4), 1715-1775, 1998
Effect of lateral confinement on valence-band mixing and polarization anisotropy in quantum wires
F Vouilloz, DY Oberli, MA Dupertuis, A Gustafsson, F Reinhardt, E Kapon
Physical Review B 57 (19), 12378, 1998
Polarization anisotropy and valence band mixing in semiconductor quantum wires
F Vouilloz, DY Oberli, MA Dupertuis, A Gustafsson, F Reinhardt, E Kapon
Physical review letters 78 (8), 1580, 1997
Mechanisms of self-ordering in nonplanar epitaxy of semiconductor nanostructures
G Biasiol, A Gustafsson, K Leifer, E Kapon
Physical Review B 65 (20), 205306, 2002
Low‐pressure organometallic chemical vapor deposition of quantum wires on V‐grooved substrates
A Gustafsson, F Reinhardt, G Biasiol, E Kapon
Applied physics letters 67 (25), 3673-3675, 1995
Epitaxial growth of indium arsenide nanowires on silicon using nucleation templates formed by self‐assembled organic coatings
T Mårtensson, JB Wagner, E Hilner, A Mikkelsen, C Thelander, J Stangl, ...
Advanced materials 19 (14), 1801-1806, 2007
Observation of type-II recombination in single wurtzite/zinc-blende GaAs heterojunction nanowires
N Vainorius, D Jacobsson, S Lehmann, A Gustafsson, KA Dick, ...
Physical Review B 89 (16), 165423, 2014
Catalyst-free nanowires with axial InxGa1− xAs/GaAs heterostructures
M Heiß, A Gustafsson, S Conesa-Boj, F Peiró, JR Morante, G Abstreiter, ...
Nanotechnology 20 (7), 075603, 2009
New insights into the origins of Sb-induced effects on self-catalyzed GaAsSb nanowire arrays
D Ren, DL Dheeraj, C Jin, JS Nilsen, J Huh, JF Reinertsen, AM Munshi, ...
Nano letters 16 (2), 1201-1209, 2016
Single-mode near-infrared lasing in a GaAsSb-based nanowire superlattice at room temperature
D Ren, L Ahtapodov, JS Nilsen, J Yang, A Gustafsson, J Huh, ...
Nano letters 18 (4), 2304-2310, 2018
Study of carrier concentration in single InP nanowires by luminescence and Hall measurements
D Lindgren, O Hultin, M Heurlin, K Storm, MT Borgström, L Samuelson, ...
Nanotechnology 26 (4), 045705, 2015
Room-temperature InP/InAsP quantum discs-in-nanowire infrared photodetectors
M Karimi, V Jain, M Heurlin, A Nowzari, L Hussain, D Lindgren, JE Stehr, ...
Nano letters 17 (6), 3356-3362, 2017
InGaN platelets: synthesis and applications toward green and red light-emitting diodes
Z Bi, F Lenrick, J Colvin, A Gustafsson, O Hultin, A Nowzari, T Lu, ...
Nano Letters 19 (5), 2832-2839, 2019
Growth and characterization of wurtzite GaP nanowires with control over axial and radial growth by use of HCl in-situ etching
A Berg, S Lehmann, N Vainorius, A Gustafsson, ME Pistol, LR Wallenberg, ...
Journal of crystal growth 386, 47-51, 2014
Structure and formation mechanisms of AlGaAs V‐groove vertical quantum wells grown by low pressure organometallic chemical vapor deposition
G Biasiol, F Reinhardt, A Gustafsson, E Martinet, E Kapon
Applied physics letters 69 (18), 2710-2712, 1996
Self-ordering of quantum-wire superlattices on V-grooved substrates
G Biasiol, E Kapon, Y Ducommun, A Gustafsson
Physical Review B 57 (16), R9416, 1998
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