Kai Tak Lam
Kai Tak Lam
Postdoctoral Associate, Department of Electrical and Computer Engineering, University of Florida
Verifierad e-postadress på ufl.edu
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Performance limits projection of black phosphorous field-effect transistors
KT Lam, Z Dong, J Guo
IEEE Electron Device Letters 35 (9), 963-965, 2014
932014
Single atomically sharp lateral monolayer p‐n heterojunction solar cells with extraordinarily high power conversion efficiency
ML Tsai, MY Li, JRD Retamal, KT Lam, YC Lin, K Suenaga, LJ Chen, ...
Advanced materials 29 (32), 1701168, 2017
772017
An ab initio study on energy gap of bilayer graphene nanoribbons with armchair edges
KT Lam, G Liang
Applied Physics Letters 92 (22), 223106, 2008
742008
A simulation study of graphene-nanoribbon tunneling FET with heterojunction channel
KT Lam, D Seah, SK Chin, SB Kumar, G Samudra, YC Yeo, G Liang
IEEE Electron Device Letters 31 (6), 555-557, 2010
712010
Device performance of heterojunction tunneling field-effect transistors based on transition metal dichalcogenide monolayer
KT Lam, X Cao, J Guo
IEEE electron device letters 34 (10), 1331-1333, 2013
662013
Device physics and characteristics of graphene nanoribbon tunneling FETs
SK Chin, D Seah, KT Lam, GS Samudra, G Liang
IEEE transactions on electron devices 57 (11), 3144-3152, 2010
612010
Bilayer graphene nanoribbon nanoelectromechanical system device: A computational study
KT Lam, C Lee, G Liang
Applied Physics Letters 95 (14), 143107, 2009
612009
Shape effects in graphene nanoribbon resonant tunneling diodes: A computational study
H Teong, KT Lam, SB Khalid, G Liang
Journal of Applied Physics 105 (8), 084317, 2009
592009
Stability and electronic structure of two dimensional compound
KT Lam, Y Lu, YP Feng, G Liang
Applied Physics Letters 98 (2), 022101, 2011
492011
Graphene nanoribbons under mechanical strain
C Chen, JZ Wu, KT Lam, G Hong, M Gong, B Zhang, Y Lu, AL Antaris, ...
Advanced Materials 27 (2), 303-309, 2015
402015
Ambipolar bistable switching effect of graphene
YJ Shin, JH Kwon, G Kalon, KT Lam, CS Bhatia, G Liang, H Yang
Applied Physics Letters 97 (26), 262105, 2010
362010
Carbon nanotube Schottky diode: an atomic perspective
P Bai, E Li, KT Lam, O Kurniawan, WS Koh
Nanotechnology 19 (11), 115203, 2008
322008
Plasmonics in strained monolayer black phosphorus
KT Lam, J Guo
Journal of Applied Physics 117 (11), 113105, 2015
302015
Correlation-based detection of attribute outliers
JLY Koh, ML Lee, W Hsu, KT Lam
International Conference on Database Systems for Advanced Applications, 164-175, 2007
302007
Operating principles of vertical transistors based on monolayer two-dimensional semiconductor heterojunctions
KT Lam, G Seol, J Guo
Applied Physics Letters 105 (1), 013112, 2014
232014
Influence of edge roughness on graphene nanoribbon resonant tunnelling diodes
G Liang, SB Khalid, KT Lam
Journal of Physics D: Applied Physics 43 (21), 215101, 2010
172010
Quantum transport simulations of graphene nanoribbon devices using Dirac equation calibrated with tight-binding π-bond model
SK Chin, KT Lam, D Seah, G Liang
Nanoscale research letters 7 (1), 1-7, 2012
142012
Electrostatics of ultimately thin-body tunneling FET using graphene nanoribbon
KT Lam, Y Yang, GS Samudra, YC Yeo, G Liang
IEEE Electron Device Letters 32 (4), 431-433, 2011
132011
Effect of body thickness on the electrical performance of ballistic n-channel GaSb double-gate ultrathin-body transistor
Y Guo, X Zhang, KL Low, KT Lam, YC Yeo, G Liang
IEEE Transactions on Electron Devices 62 (3), 788-794, 2015
122015
A computational study on the device performance of graphene nanoribbon resonant tunneling diodes
H Teong, KT Lam, G Liang
Japanese Journal of Applied Physics 48 (4S), 04C156, 2009
122009
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Artiklar 1–20