Pietro Peter Altermatt
Pietro Peter Altermatt
Principal Scientist at Trina Solar Inc., Changzhou, China
Verified email at gpvsim.org - Homepage
Cited by
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Excellent passivation of highly doped -type Si surfaces by the negative-charge-dielectric
B Hoex, J Schmidt, R Bock, PP Altermatt, MCM Van De Sanden, ...
Applied Physics Letters 91 (11), 112107, 2007
Twenty‐four percent efficient silicon solar cells with double layer antireflection coatings and reduced resistance loss
J Zhao, A Wang, P Altermatt, MA Green
Applied Physics Letters 66 (26), 3636-3638, 1995
Temperature dependence of the radiative recombination coefficient of intrinsic crystalline silicon
T Trupke, MA Green, P Würfel, PP Altermatt, A Wang, J Zhao, R Corkish
Journal of Applied Physics 94 (8), 4930-4937, 2003
24% efficient perl silicon solar cell: recent improvements in high efficiency silicon cell research
J Zhao, A Wang, PP Altermatt, SR Wenham, MA Green
Solar energy materials and solar cells 41, 87-99, 1996
Models for numerical device simulations of crystalline silicon solar cells—a review
PP Altermatt
Journal of computational electronics 10 (3), 314, 2011
Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing
PP Altermatt, A Schenk, F Geelhaar, G Heiser
Journal of Applied Physics 93 (3), 1598-1604, 2003
A simulation model for the density of states and for incomplete ionization in crystalline silicon. I. Establishing the model in Si: P
PP Altermatt, A Schenk, G Heiser
Journal of Applied Physics 100 (11), 113715, 2006
Numerical modeling of highly doped Si: P emitters based on Fermi–Dirac statistics and self-consistent material parameters
PP Altermatt, JO Schumacher, A Cuevas, MJ Kerr, SW Glunz, RR King, ...
Journal of Applied Physics 92 (6), 3187-3197, 2002
Specifying targets of future research in photovoltaic devices containing pyrite (FeS2) by numerical modelling
PP Altermatt, T Kiesewetter, K Ellmer, H Tributsch
Solar energy materials and solar cells 71 (2), 181-195, 2002
Assessment and parameterisation of Coulomb-enhanced Auger recombination coefficients in lowly injected crystalline silicon
PP Altermatt, J Schmidt, G Heiser, AG Aberle
Journal of applied physics 82 (10), 4938-4944, 1997
Input parameters for the simulation of silicon solar cells in 2014
A Fell, KR McIntosh, PP Altermatt, GJM Janssen, R Stangl, A Ho-Baillie, ...
IEEE Journal of Photovoltaics 5 (4), 1250-1263, 2015
Injection dependence of spontaneous radiative recombination in crystalline silicon: Experimental verification and theoretical analysis
PP Altermatt, F Geelhaar, T Trupke, X Dai, A Neisser, E Daub
Applied physics letters 88 (26), 261901, 2006
Limiting loss mechanisms in 23% efficient silicon solar cells
AG Aberle, PP Altermatt, G Heiser, SJ Robinson, A Wang, J Zhao, ...
Journal of Applied Physics 77 (7), 3491-3504, 1995
Impurity-related limitations of next-generation industrial silicon solar cells
J Schmidt, B Lim, D Walter, K Bothe, S Gatz, T Dullweber, PP Altermatt
2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2, 1-5, 2012
Spatially resolved analysis and minimization of resistive losses in high‐efficiency Si solar cells
PP Altermatt, G Heiser, AG Aberle, A Wang, J Zhao, SJ Robinson, ...
Progress in Photovoltaics: Research and Applications 4 (6), 399-414, 1996
Explanation of commonly observed shunt currents in c-Si solar cells by means of recombination statistics beyond the Shockley-Read-Hall approximation
S Steingrube, O Breitenstein, K Ramspeck, S Glunz, A Schenk, ...
Journal of Applied Physics 110 (1), 014515, 2011
A freeware 1D emitter model for silicon solar cells
KR McIntosh, PP Altermatt
2010 35th IEEE Photovoltaic Specialists Conference, 002188-002193, 2010
Imaging in vasculitis
WA Schmidt
Best practice & research clinical rheumatology 27 (1), 107-118, 2013
The surface recombination velocity at boron-doped emitters: comparison between various passivation techniques
PP Altermatt, H Plagwitz, R Bock, J Schmidt, R Brendel, MJ Kerr, ...
Proceedings of the 21st European Photovoltaic Solar Energy Conference, 647-650, 2006
Interpretation of recombination at interfaces by surface damage
S Steingrube, PP Altermatt, DS Steingrube, J Schmidt, R Brendel
Journal of Applied Physics 108 (1), 014506, 2010
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