| FinFET versus gate-all-around nanowire FET: Performance, scaling, and variability D Nagy, G Indalecio, AJ Garcia-Loureiro, MA Elmessary, K Kalna, ... IEEE Journal of the Electron Devices Society 6, 332-340, 2018 | 208 | 2018 |
| Cost of managing patients with venous leg ulcers CJ Phillips, I Humphreys, D Thayer, M Elmessary, H Collins, C Roberts, ... International wound journal 17 (4), 1074-1082, 2020 | 69 | 2020 |
| Comparison of fin-edge roughness and metal grain work function variability in InGaAs and Si FinFETs N Seoane, G Indalecio, M Aldegunde, D Nagy, MA Elmessary, ... IEEE Transactions on Electron Devices 63 (3), 1209-1216, 2016 | 45 | 2016 |
| Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations MA Elmessary, D Nagy, M Aldegunde, N Seoane, G Indalecio, J Lindberg, ... Solid-State Electronics 128, 17-24, 2017 | 43 | 2017 |
| Solitary solution and energy for the Kadomstev–Petviashvili equation in two temperatures charged dusty grains EK El-Shewy, MI Abo el Maaty, HG Abdelwahed, MA Elmessary Astrophysics and Space Science 332, 179-186, 2011 | 39 | 2011 |
| Metal grain granularity study on a gate-all-around nanowire FET D Nagy, G Indalecio, AJ Garcia-Loureiro, MA Elmessary, K Kalna, ... IEEE Transactions on Electron Devices 64 (12), 5263-5269, 2017 | 29 | 2017 |
| 3-D finite element Monte Carlo simulations of scaled Si SOI FinFET with different cross sections D Nagy, MA Elmessary, M Aldegunde, R Valin, A Martinez, J Lindberg, ... IEEE Transactions on Nanotechnology 14 (1), 93-100, 2014 | 23 | 2014 |
| Dust acoustic solitary waves in saturn F-ring's region EK El-Shewy, MIA El Maaty, HG Abdelwahed, MA Elmessary Communications in Theoretical Physics 55 (1), 143, 2011 | 21 | 2011 |
| Anisotropic quantum corrections for 3-D finite-element Monte Carlo simulations of nanoscale multigate transistors MA Elmessary, D Nagy, M Aldegunde, J Lindberg, WG Dettmer, D Períc, ... IEEE Transactions on Electron Devices 63 (3), 933-939, 2016 | 18 | 2016 |
| Dust acoustic shock waves in two temperatures charged dusty grains EK El-Shewy, HG Abdelwahed, MA Elmessary Physics of Plasmas 18 (11), 2011 | 13 | 2011 |
| Simulation study of scaled In0. 53Ga0. 47As and Si FinFETs for sub-16 nm technology nodes N Seoane, M Aldegunde, D Nagy, MA Elmessary, G Indalecio, ... Semiconductor Science and Technology 31 (7), 075005, 2016 | 11 | 2016 |
| Spatial sensitivity of silicon GAA nanowire FETs under line edge roughness variations G Indalecio, AJ Garcia-Loureiro, MA Elmessary, K Kalna, N Seoane IEEE Journal of the Electron Devices Society 6, 601-610, 2018 | 10 | 2018 |
| Drift-diffusion versus Monte Carlo simulated ON-current variability in nanowire FETs D Nagy, G Indalecio, AJ Garcia-Loureiro, G Espineira, MA Elmessary, ... IEEE Access 7, 12790-12797, 2019 | 8 | 2019 |
| Propagation of dust acoustic solitary waves in Saturn f-ring’s region MIA el Maaty, EK El-Shewy, HG Abdelwahed, MA Elmessary Electronic Journal of Theoretical Physics 7 (24), 151-162, 2010 | 6 | 2010 |
| Improved dust acoustic solitary waves in two temperature dust fluids EK El-Shewy, HG Abdelwahed, MI Abo el Maaty, MA Elmessary Applications and Applied Mathematics: An International Journal (AAM) 5 (1), 3, 2010 | 2 | 2010 |
| Study of strained effects in nanoscale GAA nanowire FETs using 3D Monte Carlo simulations MA Elmessary, D Nagy, M Aldegunde, AJ García-Loureiro, K Kalna 2017 47th European Solid-State Device Research Conference (ESSDERC), 184-187, 2017 | 1 | 2017 |
| 3D MC simulations of strain, channel orientation, and quantum confinement effects in nanoscale Si SOI FinFETs MA Elmessary, D Nagy, M Aldegunde, AJ Garcia-Loureiro, K Kalna 2016 International Conference on Simulation of Semiconductor Processes and …, 2016 | 1 | 2016 |
| Multi-subband interface roughness scattering using 3D Finite Element Monte Carlo with 2D Schödinger equation for simulations of sub-16nm FinFETs D Nagy, MA Elmessary, M Aldegunde, J Lindberg, AJ García-Loureiro, ... 2015 International Conference on Simulation of Semiconductor Processes and …, 2015 | 1 | 2015 |
| Multi-subband interface roughness scattering using 2D finite element schodinger equation for monte carlo simulations of multi-gate transistors D Nagy, MA Elmessary, M Aldegunde, J Lindberg, AJ Garcia-Loureiro, ... 2015 International Workshop on Computational Electronics (IWCE), 1-4, 2015 | 1 | 2015 |
| The effect of interface roughness scattering on Si SOI FinFET with Ando's and extended Prange and Nee model D Nagy, MA Elmessary, M Aldegunde, K Kalna Journal of Physics: Conference Series 647 (1), 012065, 2015 | 1 | 2015 |
Karol KalnaProfessorVerified email at swansea.ac.uk
